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151.
Erzsébet Néher-Neumann 《Journal of solution chemistry》2006,35(8):1085-1107
Equations are derived for the calculation of the total potential anomalies in Emf cells with liquid junctions (ΔE
J
) in mV and at 25.0 °C, defined as
wherez
j
= the charge number of the potential determining ion, J, and TS2 = terminal solution 2 ≡ test solution. This definition includes the activity factor (f
J
) contributions to the measuring electrode, the ideal diffusion potential (E
D
) and the contribution of the activity factors to E
D
, denoted by E
Df
. The cell assumed to contain an equilibrium solution which exists in the system, HY – BY
z(B)–A
y
L in the ionic medium (A+, Y−) with the experimental condition I (ionic strength) = CM, constant, in the mixed solutions. Here, L
y
− denotes the ligand and B
z
(B)+ the metal ions.The reasons for the dependence of the equilibrium constants on the ionic medium are given. The change of the equilibrium constants with the experimental conditions in a given ionic medium is also explained. 相似文献
152.
A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in Ron.sp by 45.7% simultaneously. 相似文献
153.
We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT and tunnel magneto resistance (TMR) behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where the heavily restrained thermal conductance should be responsible for. Thermo-STT in Fe/Vac/Fe MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness. 相似文献
154.
Yue-Wei Yin Muralikrishna Raju Wei-Jin Hu Xiao-Jun Weng Ke Zou Jun Zhu Xiao-Guang Li Zhi-Dong Zhang Qi Li 《Frontiers of Physics》2012,7(4):380-385
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures. 相似文献
155.
156.
The superconducting quantum interference device(SQUID) amplifier is widely used in the field of weak signal detection for its low input impedance, low noise, and low power consumption. In this paper, the SQUIDs with identical junctions and the series SQUIDs with different junctions were successfully fabricated. The Nb/Al-AlO_x/Nb trilayer and input Nb coils were prepared by asputtering equipment. The SQUID devices were prepared by a sputtering and the lift-off method.Investigations by AFM, OM and SEM revealed the morphology and roughness of the Nb films and Nb/Al-AlO_x/Nb trilayer.In addition, the current–voltage characteristics of the SQUID devices with identical junction and different junction areas were measured at 2.5 K in the He~3 refrigerator. The results show that the SQUID modulation depth is obviously affected by the junction area. The modulation depth obviously increases with the increase of the junction area in a certain range. It is found that the series SQUID with identical junction area has a transimpedance gain of 58 ? approximately. 相似文献
157.
Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications. 相似文献
158.
介绍了PN结物理特性综合实验原理,利用绘图软件Matlab对实验数据进行曲线拟合,得到了PN结伏安特性函数表达式和PN结正向压降与温度间关系的拟合曲线,计算了常温下玻尔兹曼常数和PN结温度传感器灵敏度及T=0 K时的半导体近似禁带宽度。 相似文献
159.
Silicon photodetectors and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are frequently used devices for measuring ionizing radiation in health physics instrumentation. The Bipolar Junction Transistor (BJT) is not a typical device used as a detector for measuring some physical quantities in radiotherapy beams due to its loss of sensitivity to ionizing radiation, as a consequence of radiation damage in the silicon semiconductor substrate. Actually, the know-how of the BJT characteristic curves and its response to ionizing radiation leads us to suggest an alternative method to estimate the radiation dose value in breast cancer treatments. The BJT parameter to be evaluated before and after the irradiation procedure is the BJT amplification factor, also called DC gain β. In this work, the study was done using a BJT known as Darlington type, within an Alderson Rando anthropomorphic phantom. Darlington transistors have very high gain and this feature allowed that the BJT gain changes to be correlated with the dose of the radiation beam. The results indicate that this new method could be an alternative option to estimate the dose value in the phantom for measurements in breast cancer radiotherapy. 相似文献
160.
Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring 下载免费PDF全文
This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length. 相似文献