In-plane bistatic backward scattering from seabottom with randomly inhomogeneous sediment and rough interface

1 Introduction Backward scattering of sound due to sediment is the main source of shallow waterreverberation. In order to predict the reverberation or detect sediment properties frommeasured reverberation data, a reasonable in-plane bistatic backward scattering (BBS)model is essential. The scattering can be caused by the roughness of water-sediment in-terface or by inhomogeneities within the volume of sediment. A great deal of researchhas been done on sediment backscattering, most of which h…     

界面条件下线型超声相控阵声场特性研究

开展了界面条件下线型超声相控阵声场特性的研究.将带有楔块的超声相控阵问题合理简化为液固界面的情况进行讨论.根据射线声学理论,计算了单阵元在液固界面存在时的辐射声场,进而推导了聚焦法则,得到了超声线型阵在液固界面存在时的声场、位移场表达式.对安装在楔块上的相控阵换能器的辐射声场进行了仿真,并讨论了聚焦对换能器轴向和横向声场的影响,结果表明利用聚焦能提高分辨率和灵敏度,但聚焦区域之外声束性能更差,在实际检测中要合理利用聚焦. 关键词： 超声相控阵 界面 声场 聚焦     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Statistical Analysis of the Effect of Mineral Admixtures on the Strength of the Interfacial Transition Zone

Microscopic evidence indicates that the thickness of the interfacial transition zone (ITZ) between the aggregate and the cement paste is modified when mineral admixtures partially replace portland cement. Unfortunately, there is limited information on the significance of these microscopic modifications to the mechanical properties of the ITZ. This research reports experimental results on the shear and tensile strength of the ITZ as affected by the addition of the following mineral admixtures: silica fume, fly ash, and natural pozzolan. Statistical analysis was used to identify the significant parameters affecting the tensile and shear strength of the ITZ. Experimental results indicate that not only does the incorporation of silica fume and fly ash increase the strength of the ITZ, these mineral admixtures have a greater influence on the strength increase of the ITZ than in the strength increase of the cement paste.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

等容条件下H2O-CO2-CH4混合流体的高温拉曼光谱就位分析

 以合成包裹体作为腔体，用显微激光拉曼探针就位分析了H₂O-CO₂-CH₄混合流体的高温特性。研究结果表明，在高温下，CH₄和CO₂相互之间对各自拉曼光谱的影响不大，水分子对它们的拉曼峰有比较大的影响。在等容条件下，流体均一前，随着温度的升高，水分子的氢键几乎呈线性减少，均一为气相的流体，水分子伸缩振动拉曼峰的变化与一般气体变化相似；随着温度升高，体系压力的增加，最大峰频率呈很微小的降低趋势。均一为液相的流体中的水分子，在均一温度时，氢键变化发生了转折，均一后流体中水分子的氢键受温度的影响比均一前明显要小，在测量的最高温度520 ℃，水分子存在着一定的氢键作用。一直到拉曼光谱测量的最高温度580 ℃还未均一的流体，液相中水分子存在比较强的氢键作用。     

重新初始化的LS方法跟踪二维可压缩多介质流界面运动

 用非耦合求解方法计算Level Set函数方程与流体力学方程组，应用重新初始化的Level Set函数确保距离函数性质，流体力学方程组采用二阶精度多介质流波传播差分格式计算，重新初始化方程采用五阶WENO格式计算。并给出了二维可压缩多介质流界面运动的计算结果。     

ZnO∶Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO∶A l/p-S i接触,并对其进行C-V和I-V特性的77~350 K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C-V和I-V特性上有很大差别。解释了两种样品的C-V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO∶A l/p-S i异质结的C-V曲线发生畸变。经800℃热退火,ZnO∶A l/p-S i异质结的C-V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO∶A l/p-S i异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

二维正方格子磁性光子晶体的界面传导模

采用平面波展开加超元胞方法计算了二维正方格子磁性光子晶体的光子带隙结构，其中散射子的形状分别为长方形，正方形，六角形和圆形.结果表明绝对带隙宽度和其宽高比远大于同种结构的非磁性光子晶体.在此基础上，构成了混合型异质结，并计算了相应的传导模，发现了理想的界面传导模，而且当磁性散射子为长方形、圆形、六角形散射子时产生传导模都不需要晶格畸变，这也是磁性光子晶体异质结所具备的优点. 关键词： 光子晶体 光子带隙结构 传导模