准球心弧线摆动高速抛光用的高纯氧化铈

本文阐述了准球心弧线摆动高速抛光中与聚氨基甲酸乙酯抛光模相匹配的高纯氧化铈抛光粉经烧制处理后的抛光效率,添加剂的作用以及回收处理。     

锑掺杂氧化锡粉体的太赫兹透射特性

以SnCl45H2O和SbCl3为原料,采用液相化学共沉淀法制备锑掺杂氧化锡（ATO）粉体。分析了不同Sb掺杂质量分数条件下,ATO粉体的禁带宽度变化,并对材料在0.2~1.6 THz波段的透射时域和频域谱,以及吸收和屏蔽参数进行了对比分析。结果表明,ATO粉体的禁带宽度随着Sb掺杂量的增加先减小后增大;同时,ATO粉体对THz波的吸收系数随着Sb掺杂量的增加先增大后减小,当Sb掺杂质量分数为9%时,ATO的吸收系数在1.25 THz处达到最大值156.5 cm-1,屏蔽效能在1.24~1.60 THz范围内最高达到45.0 dB。     

La0.7Ca0.3Mn1-xCrxO3的激光超声研究

运用激光超声的方法测定了五种不同掺杂的巨磁锰氧化物La0.7Ca0.3Mn1-xCrxO3(0.01≤x≤0.60)室温(300 K)下的超声纵波声速.结合热导率的数据,对声速随掺杂浓度的变化原因进行了深入的分析.得到在顺磁绝缘态Cr3 离子的掺入造成了晶格局部涨落的变化,低掺杂使得晶格局部涨落增强,声子U散射弛豫时间减小.     

N2- and O2-broadening coefficients and profiles for millimeter lines of N2O

For the purpose of atmospheric applications, we have measured N₂- and O₂-induced broadenings and shapes of rotational lines of N₂O in the 235-350 K temperature range, precisely the J=8←7, J=22←21, and J=23←22 lines, located near 201, 552, and 577 GHz, respectively. The analysis of experimental lineshapes shows up significant deviations from the Voigt profile, which are characteristic of line narrowing processes. In a first step, the Voigt profile was considered for the determination of pressure broadening parameters and of their temperature dependencies. Results are in good agreement with the dependence from rotational quantum number previously observed for other rotational and rovibrational lines. They are well explained by calculations based on a semiclassical formalism that includes the atom-atom Lennard-Jones potential in addition to electrostatic interactions up to hexadecapolar contributions. In a second step, observed lineshapes were analyzed by using the Galatry profile and a speed-dependent Voigt profile. The nonlinear pressure behavior observed for the diffusion rate β involved in the Galatry profile leads to rule out the possible role of velocity/speed changing collisions, and to infer that discrepancies from the Voigt profile result from the dependence of relaxation rates on molecular speeds. This interpretation is supported by the comparison of optical and kinetic radii and confirmed by theoretical calculations of relaxation rates. Finally, it can be claimed that, for the N₂O-N₂ and N₂O-O₂ systems, deviations from the Voigt profile are explained by a speed-dependent Voigt profile.     

High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Sol–gel derived ZnO nanoparticulate films for ultraviolet photodetector (UV) applications

Zinc oxide nanoparticles based UV detector was fabricated on thermally oxidized silicon substrate. ZnO nanoparticle films were deposited using sol–gel route. The seed solution was prepared using two different solvents (methanol and isopropyl alcohol (IPA)). The surface morphology of the prepared films was characterized by FESEM. Structural characterization along with optical measurements was carried out using XRD and UV–vis spectroscopy. For the UV photo-detector, ZnO thin film prepared in IPA is selected based on their structural and optical analysis. The changes in photo-response of ZnO thin film with respect to time was studied under the dark and variable UV intensities. It was observed that the photocurrent increased with a factor of 4.82 under 1.16 mW of UV intensity. It is believe that the synthesized ZnO thin films have potential to use in the ultraviolet photo-detector applications.     

Role of chelating agent in chemical and fluorescent properties of SnO2 nanoparticles

A modified polyacrylamide gel route is applied to synthesize SnO2 nanoparticles. High-quality SnO2 nanoparticles with a uniform size are prepared using different chelating agents. The average particle size of the samples is found to depend on the choice of the chelating agent. The photoluminescence spectrum detected at λex = 230 nm shows a new peak located at 740 nm due to the surface defect level distributed at the nanoparticle boundaries.     

Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.