HIRFL-CSR前端总线控制器的改进设计

论述了用于兰州重离子加速器冷却存储环(HIRFL CSR)控制系统的前端总线系统控制器的改进。 改进了控制器的嵌入式操作系统和应用程序, 开发了控制器和数据库交换数据的应用程序。 该控制器基于BGA封装的ARM920T(ARM9)处理器和嵌入式的LINUX操作系统, 可以连接标准的VGA显示器、 键盘、 鼠标, 采用了现场可编程的FPGA器件进行背板接口设计, 并具有64 mA高驱动能力的总线驱动器, 以及拥有灵活的接口信号定义可编程能力, 是HIRFL CSR控制系统的关键部件。 The EVME bus controller which is a key component of the HIRFL CSR control system was improved . Besides reconfiguring the embedded Linux, a utility program was developed for data exchange between the controller and the database. The bus controller is based on ARM920T(ARM9) micro processor which is BGA packaged. The bus controller has the universal interface of VGA display, keyboard, and mouse. The backboard interface logic is programmed in an in system configurable FPGA device. The bus can drive high current up to 64 mA, with the flexibility of the programmable signal definitions. All the improved performance helped the EVME bus controller play a crucial role in HIRFL CSR control system.     

In-plane bistatic backward scattering from seabottom with randomly inhomogeneous sediment and rough interface

1 Introduction Backward scattering of sound due to sediment is the main source of shallow waterreverberation. In order to predict the reverberation or detect sediment properties frommeasured reverberation data, a reasonable in-plane bistatic backward scattering (BBS)model is essential. The scattering can be caused by the roughness of water-sediment in-terface or by inhomogeneities within the volume of sediment. A great deal of researchhas been done on sediment backscattering, most of which h…     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Statistical Analysis of the Effect of Mineral Admixtures on the Strength of the Interfacial Transition Zone

Microscopic evidence indicates that the thickness of the interfacial transition zone (ITZ) between the aggregate and the cement paste is modified when mineral admixtures partially replace portland cement. Unfortunately, there is limited information on the significance of these microscopic modifications to the mechanical properties of the ITZ. This research reports experimental results on the shear and tensile strength of the ITZ as affected by the addition of the following mineral admixtures: silica fume, fly ash, and natural pozzolan. Statistical analysis was used to identify the significant parameters affecting the tensile and shear strength of the ITZ. Experimental results indicate that not only does the incorporation of silica fume and fly ash increase the strength of the ITZ, these mineral admixtures have a greater influence on the strength increase of the ITZ than in the strength increase of the cement paste.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

ZnO∶Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO∶A l/p-S i接触,并对其进行C-V和I-V特性的77~350 K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C-V和I-V特性上有很大差别。解释了两种样品的C-V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO∶A l/p-S i异质结的C-V曲线发生畸变。经800℃热退火,ZnO∶A l/p-S i异质结的C-V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO∶A l/p-S i异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

二维正方格子磁性光子晶体的界面传导模

采用平面波展开加超元胞方法计算了二维正方格子磁性光子晶体的光子带隙结构，其中散射子的形状分别为长方形，正方形，六角形和圆形.结果表明绝对带隙宽度和其宽高比远大于同种结构的非磁性光子晶体.在此基础上，构成了混合型异质结，并计算了相应的传导模，发现了理想的界面传导模，而且当磁性散射子为长方形、圆形、六角形散射子时产生传导模都不需要晶格畸变，这也是磁性光子晶体异质结所具备的优点. 关键词： 光子晶体 光子带隙结构 传导模     

A Monte Carlo simulation of the heterogeneous adsorption of hydrogen ions on metal oxides: Effect of inert electrolyte

Charging of the surface of an oxide caused by the adsorption of hydrogen ions and ions of inert 1:1 electrolyte was investigated by using grand canonical Monte Carlo simulation technique. In particular, adsorption isotherms of protons as well as of ions of the electrolyte together with the resulting charge density of the surface were obtained for different system parameters. Also, the effect of the surface energetic heterogeneity and the concentration of the background electrolyte on the isotherms and the charge density curves was examined. Furthermore, lateral interactions in the mixed adsorbed phase were taken into account in the modeling of the system behavior. The obtained results, in general, suggest that the three factors mentioned above may have substantial influence on the charging mechanism at the liquid/oxide interface.     

In-Situ Intrinsic Interface Strength Measurement at Elevated Temperatures and its Relationship to Interfacial Structure

A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al₂O₃ interfaces.     

Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

The growth of ultrathin Fe films of various coverages on Ge(1 1 1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). All experimentally observed XPD patterns suggested local order structures of the Fe layers for all thicknesses studied. The short-range order of the resulting structures was found to be enhanced for thinner layers whereas the long-range order was gradually lost with increasing Fe thicknesses. At a very low coverage of 0.8 Å Fe and Ge tend to react to the partly ordered structure in which Fe atoms were located in local environments similar to those for higher Fe coverages. Comparison of theoretical and experimental XPD patterns, along with XPS results, showed that intermixing between Fe and Ge occurred during the pseudomorphic growth with a stacking fault near the interface for all Fe coverages under study. Nevertheless, small percentage of domains without the stacking fault was also found to coexist with those with the stacking fault by performing a quantitative analysis of a reliability factor R of the Fe2p pattern for 5.4 Å. The orientation changes of the Ge2p and Ge3d XPD patterns with Fe thickness were unambiguously explained in terms of their different dependencies on the overlayer thickness due to the different inelastic mean free path lengths used in the simulations. Also, Fe got increasingly enriched in the grown layers with increased Fe coverage. The resulting structures and intermixing are discussed in detail.