单光子LIF方法研究亚硝基苯266 nm光解动力学

用266nm激光解离亚硝基苯（C6H5NO）产生光解碎片NO,并利用单光子激光诱导荧光（LIF）技术（X^2Ⅱv″=0→A^2∑^+v′=0）测得初生态光解产物NO的振转光谱。根据计算所得的模拟光谱对光解碎片NO（X,v^″＝0）的转动量子数J″进行了归属,得到了量子数最大到J″＝50．5的转动能级的相对布居,这表面光解碎片NO具有较高的转动激发。提出了C6H5NO在266nm下可能的光解机理。     

纳秒脉冲气体放电机理探讨

 经典Townsend机理和流注理论是气体放电研究的基础,但在解释纳秒脉冲气体放电时均存在一定缺陷。基于经典气体放电理论,探讨纳秒脉冲气体放电机理,分析流注理论判据在纳秒脉冲气体放电中的有效性,解释纳秒脉冲下电子逃逸现象和基于电子逃逸的快速电离波击穿理论,仿真计算高能快电子的逃逸过程。结果认为基于高能量快电子的逃逸击穿将是可能解释纳秒脉冲下气体放电现象的依据。     

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

In this work, the influence of Si/SiO₂ interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO₂ interface evidenced by less negative V_t shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C-V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.     

Classification of recyclables using laser-induced breakdown spectroscopy for waste management

With the ever-increasing amount of generated waste governments around the world are looking for, and implementing, ways to minimize waste output and maximize waste recovery. The main difficulties are sorting waste items, identifying the different types of plastics, and the time taken to sort them manually. Bioplastics such as polylactic acid and Novatein thermoplastic protein can be incorporated into the recycling stream to minimize waste. Laser-induced breakdown spectroscopy spectra analyzed by k-nearest neighbor and soft independent modeling by class analogy were investigated as methods that can rapidly identify recyclables. Raw, peak normalized, and total intensity normalized spectra were used to identify which would improve classification. Laser-induced breakdown spectroscopy spectra were generated by single laser shots to different locations on nine samples, glass (brown, green, and clear), tin, aluminum, polylactic acid, Novatein, polyethylene terephthalate, and high-density polyethylene. To prove that the system has the potential to be used on a waste sorting stream an autofocus unit was developed to move the laser-induced breakdown spectroscopy beam into focus on the different sample geometries. Two classification methods were investigated, soft independent modeling by class analogy and the k-nearest neighbors algorithm. k-Nearest neighbors on raw spectra produced the best results. Discrimination between bioplastics and plastics were 100%. Glass samples could not be reliably distinguished from each other. Surface contamination produced three misclassifications from 450 spectra. Similar results were obtained when the spectral range was reduced from 182.26–908.07?nm to 313.20–495.12?nm.     

介质表面高功率微波击穿的数值模拟

研究了用于模拟高功率微波条件下介质表面击穿的静电PIC-MCC模型,并通过自行编写的数值模拟程序模拟了真空及不同气压条件下介质表面击穿过程中的次级电子倍增和气体电离等过程.模拟结果发现,在真空及低气压条件下,电子的主要来源是次级电子倍增,电子数量以两倍于入射场的频率振荡;在高气压情况下,电子的主要来源是气体电离. 关键词： 介质表面击穿 高功率微波 数值模拟 次级电子倍增     

液体光击穿阈值的研究

运用声学基础理论,讨论了激光入射到液体中,激光能量与声信号强度间的变化关系.发现激光能量与声信号强度之间存在着对数线形关系.根据液体中光声信号的连续性,得到了一种求取液体光击穿阈值的新方法.     

Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

We report the formation of β′-Gd₂(MoO₄)₃ (GMO) crystal on the surface of the 21.25Gd₂O₃-63.75MoO₃-15B₂O₃ glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm⁻¹, 240 cm⁻¹, 466 cm⁻¹, 664 cm⁻¹ and 994 cm⁻¹which belong to the MoO₃ crystals were observed. The possible mechanisms are proposed to explain these phenomena.     

Exact potential minimization for a supergravity model

The low energy effective scalar potential arising from the supergravity model proposed by Nilles, Srednicki and Wyler is minimized exactly. Bounds are derived for the parameters of the theory from the requirement that SU(2) × U(1) be broken at the tree level. These results support earlier approximate results.     

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法,对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上,采用有限元法计算阴极杆表面电场随二极管电压的变化规律,设计了实验系统,并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时,钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜,实验结果表明,镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约20.6%;在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜,实验结果表明,镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约28.1%。因此,在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。