送粉角度对激光熔覆铁基复合涂层形状特征的影响

通过分析激光熔覆过程中光束、粉末和熔池间的作用机理,建立了送粉式激光熔覆材料有效利用率的数学模型,在此基础上推导了送粉角度与工艺参数之间的定量关系式,并计算了不同送粉角度下的熔覆材料有效利用率、熔高和横截面积。结果表明,在熔覆工艺参数不变的条件下,理论计算的熔覆材料有效利用率、熔覆层高度和横截面积均随送粉角度的增加而增大,且均高于实验检测值。激光熔覆过程中,由于粉末烧损和机械损失,使熔覆材料有效利用率、熔高和横截面积随送粉角度变化出现最大值,理想送粉角度为60。     

La0.7Ca0.3Mn1-xCrxO3的激光超声研究

运用激光超声的方法测定了五种不同掺杂的巨磁锰氧化物La0.7Ca0.3Mn1-xCrxO3(0.01≤x≤0.60)室温(300 K)下的超声纵波声速.结合热导率的数据,对声速随掺杂浓度的变化原因进行了深入的分析.得到在顺磁绝缘态Cr3 离子的掺入造成了晶格局部涨落的变化,低掺杂使得晶格局部涨落增强,声子U散射弛豫时间减小.     

N2- and O2-broadening coefficients and profiles for millimeter lines of N2O

For the purpose of atmospheric applications, we have measured N₂- and O₂-induced broadenings and shapes of rotational lines of N₂O in the 235-350 K temperature range, precisely the J=8←7, J=22←21, and J=23←22 lines, located near 201, 552, and 577 GHz, respectively. The analysis of experimental lineshapes shows up significant deviations from the Voigt profile, which are characteristic of line narrowing processes. In a first step, the Voigt profile was considered for the determination of pressure broadening parameters and of their temperature dependencies. Results are in good agreement with the dependence from rotational quantum number previously observed for other rotational and rovibrational lines. They are well explained by calculations based on a semiclassical formalism that includes the atom-atom Lennard-Jones potential in addition to electrostatic interactions up to hexadecapolar contributions. In a second step, observed lineshapes were analyzed by using the Galatry profile and a speed-dependent Voigt profile. The nonlinear pressure behavior observed for the diffusion rate β involved in the Galatry profile leads to rule out the possible role of velocity/speed changing collisions, and to infer that discrepancies from the Voigt profile result from the dependence of relaxation rates on molecular speeds. This interpretation is supported by the comparison of optical and kinetic radii and confirmed by theoretical calculations of relaxation rates. Finally, it can be claimed that, for the N₂O-N₂ and N₂O-O₂ systems, deviations from the Voigt profile are explained by a speed-dependent Voigt profile.     

High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Sol–gel derived ZnO nanoparticulate films for ultraviolet photodetector (UV) applications

Zinc oxide nanoparticles based UV detector was fabricated on thermally oxidized silicon substrate. ZnO nanoparticle films were deposited using sol–gel route. The seed solution was prepared using two different solvents (methanol and isopropyl alcohol (IPA)). The surface morphology of the prepared films was characterized by FESEM. Structural characterization along with optical measurements was carried out using XRD and UV–vis spectroscopy. For the UV photo-detector, ZnO thin film prepared in IPA is selected based on their structural and optical analysis. The changes in photo-response of ZnO thin film with respect to time was studied under the dark and variable UV intensities. It was observed that the photocurrent increased with a factor of 4.82 under 1.16 mW of UV intensity. It is believe that the synthesized ZnO thin films have potential to use in the ultraviolet photo-detector applications.     

Role of chelating agent in chemical and fluorescent properties of SnO2 nanoparticles

A modified polyacrylamide gel route is applied to synthesize SnO2 nanoparticles. High-quality SnO2 nanoparticles with a uniform size are prepared using different chelating agents. The average particle size of the samples is found to depend on the choice of the chelating agent. The photoluminescence spectrum detected at λex = 230 nm shows a new peak located at 740 nm due to the surface defect level distributed at the nanoparticle boundaries.     

Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.     

Synthesis and magnetic properties of multilayer Ni/Cu and NiFe/Cu nanowires

Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm. The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer (VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices.