航空钛合金的激光冲击研究

介绍了用激光冲击处理航空材料钛合金TC4提高其力学性能的技术.当利用强激光冲击钛合金表面时,涂层表面形成高幅值冲击波.在冲击波的高压作用下,钛合金表面发生微塑性变形,形成高幅值残余压应力层.激光冲击后,表面压应力层厚度达1 mm以上,压应力达200 MPa以上.随着激光能量的增加,冲击区域的残余应力有增大的趋势,在功率密度由1 GW/cm2增加到5 GW/cm2过程中,其冲击波峰值处的压力线性增加,表面最大残余压应力也相应线性增加;在功率密度为2 GW/cm2时,残余压应力随着次数增加而升高,而且表面硬度也大大提高,从而有效地改善了材料的机械性能,大幅度提高航空材料的疲劳寿命和抗应力腐蚀性能.     

高速出口前置指路标志的安全距离设置模型

为提高高速出口前置指路标志(AGS)对分流区的安全性能,根据分流区特性和驾驶员的视认-驶离行为,在分析车道变换行驶距离计算模式的基础上,建立了前置指路标志的安全距离设置模型.该模型揭示了交通流量、设计时速、车道数对分流区变道行为的影响.TSIS-CORSIM模拟显示,对主线设计时速超过110 km/h的三车道高速公路而言,当AGS设置距离为700m时,分流区内车辆的变道次数最少且变道次数均衡分散,其安全性能最好.     

光密度法测定蛋白核小球藻生物量

目的修正传统光密度测定微藻生物量的方法。方法通过扫描并比较蛋白核小球藻藻液和总色素提取物在200～800nm范围内的吸光值,确定最佳波长以修正传统光密度法测定波长,绘制标准曲线来间接测定蛋白核小球藻的生物量。比较修正前后光密度法测定蛋白核小球藻生物量的精确性。结果 517nm下对应的吸光值与蛋白核小球藻的生物量有显著的线性关系。采用修正后光密度法测定干重量具有良好的线性关系:Y=0.257 8X-0.005 1(R2=0.995 6),相比传统光密度法具有更好的相关性;采用修正后光密度法测定细胞密度具有良好的线性关系:D=2 320.4X+0.030 6(R2=0.999 3),相比传统光密度法具有更好的相关性;修正后光密度法与干重法实时测定的蛋白核小球藻生物量结果基本一致,而传统光密度法与干重法具有一定的偏差。结论采用517nm修正传统光密度法测定波长,有效消除了色素干扰带来的误差,可以作为蛋白核小球藻生物量测定的特征波长。     

β—环糊精及脱氧胆酸的固载化研究

借助反应溶胀剂,将氯甲基化交联聚苯乙烯分别与β－环糊精,脱氧胆酸接枝而固载化,采用扫描电镜,红外光谱,差热－热重分析等方法对固载物作了表征,研究结果表明,固载化反应发生在固载体的氯甲基和被载体的羟基间,形成醚基团得到的固载物热稳定性有所增强,相变点亦通过固载迁向高温区,取得较满意固载效果。     

基于Hopfield神经网络模型的通道布线算法

本文探讨了用Hopfield神经网络模型解决通道布线问题的一种新算法。算法描述了Hopfield模型与通道布线问题的映射方法和网络能量函数的构造方法,在能量函数中既考虑了合法解约束项,又考虑了优化解约束项,从而提高了布线质量。本文的意义还在于它证明了用Hopfield网络求解通道布线问题是可行的,有效的。     

稠油热采井补贴管管柱界面粘脱分析与防治

稠油井注汽热采过程中,热应力易使补贴管与水泥环之间出现微裂缝、微环隙,致使界面出现粘脱现象,进而导致补贴失效。为延长补贴管使用周期,首先基于井下管柱三轴热应力理论与界面破坏准则,运用ABAQUS有限元软件建立热采井补贴管热力耦合三维有限元模型,模拟实际注蒸汽热采过程,得出补贴管-水泥-旧套管-水泥-地层系统的温度场、应力场分布规律及补贴管界面粘脱情况,并研究不同注汽温度、注汽压力、胶结强度等因素对补贴管界面黏结状态的影响;随后将预应力技术应用于补贴管二次固井过程中,并在不同工况下将施加预应力技术前后补贴管界面粘脱状态进行对比,界面粘脱长度显著降低;最后确定了不同温升条件下的预应力施加值,为二次固井与套损治理提供指导意义。     

Investigation of the Uptake and Transport of Two Novel Camptothecin Derivatives in Caco-2 Cell Monolayers

Irinotecan and Topotecan are two Camptothecin derivatives (CPTs) whose resistance is associated with the high expression of breast cancer resistance protein (BCRP) and P-glycoprotein (P-gp). To reverse this resistance, two novel CPTs, FL77-28 (7-(3-Fluoro-4-methylphenyl)-10,11-methylenedioxy-20(S)-CPT) and FL77-29 (7-(4-Fluoro-3-methylphenyl)-10,11-methylenedioxy-20(S)-CPT), were synthesized by our group. In this study, the anti-tumor activities of FL77-28, FL77-29, and their parent, FL118 (10,11-methylenedioxy-20(S)-CPT), were evaluated and the results showed that FL77-28 and FL77-29 had stronger anti-tumor activities than FL118. The transport and uptake of FL118, FL77-28, and FL77-29 were investigated in Caco-2 cells for the preliminary prediction of intestinal absorption. The apparent permeability coefficient from apical to basolateral (P_{app AP-BL}) values of FL77-28 and FL77-29 were (2.32 ± 0.04) × 10⁻⁶ cm/s and (2.48 ± 0.18) × 10⁻⁶ cm/s, respectively, suggesting that the compounds had moderate absorption. Since the transport property of FL77-28 was passive diffusion and the efflux ratio (ER) was less than 2, two chemical inhibitors were added to further confirm the involvement of efflux proteins. The results showed that FL77-28 was not a substrate of P-gp or BCRP, but FL77-29 was mediated by P-gp. In conclusion, FL77-28 might be a promising candidate to overcome drug resistance induced by multiple efflux proteins.     

Application of Two Novel Acoustic Emission Parameters on Identifying the Instability of Granite

The issue of monitoring and early warning of rock instability has received increasing critical attention in the study of rock engineering. To investigate the damage evolution process of granite under triaxial compression tests, acoustic emission (AE) tests were performed simultaneously. This study firstly introduced two novel parameters, i.e., the coefficient of variation (CoV) of the information entropy and correlation dimension of the amplitude data from the AE tests, to identify the precursor of the failure of granite. Then the relationship between the changes in these parameters and the stress-time curve was compared and analyzed. The results of this study show that: (1) There is a strong correlation between the CoV of the information entropy and the failure process of granite. The granite failed when the CoV curve raised to a plateau, which could be used as an indicator of rock instability. (2) The fluctuation of the correlation dimension indicates the different stages during the loading process, i.e., the initial compaction stage, the linear elastic stage, the yield stage, and the failure stage. Each stage contains a descending and a rising process in the correlation dimension curve, and the exhibited starting point or the bottom point at the correlation dimension curve could be selected as the indicator point for the rock instability. (3) The combined analysis of the Information entropy and Correlation dimension can improve the accuracy of rock instability prediction. This study provides new insights into the prediction of rock instability, which has theoretical implications for the stability of subsurface engineering rock masses.     

一种在驱动轮打滑情况下爬壁机器人动力学建模方法

分析了轮式爬壁机器人(WWCR)在壁面作业容易发生打滑的原因,在建立其理想纯滚动假设条件下的动力学模型基础上,基于车辆动力学理论,引入单个驱动轮的动力学方程,提出了一种在驱动轮打滑情况下WWCR的动力学建模方法.仿真算例表明,吸盘吸附力和壁面附着系数对WWCR运动轨迹影响非常大;在复杂的壁面环境下,可通过对吸盘吸附力和驱动轮力矩的协调控制,合理调节轮子的打滑程度,获得尽可能大的附着系数,并弥补打滑造成的运动轨迹偏移,从而获得良好的壁面运动性能.该建模方法为WWCR在打滑情况下的运动控制和路径规划提供了理论研究基础.     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.