High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46\% and 25\% at a wavelength of 1.55~μ m are achieved by simulation and experiment, respectively. An optical 3~dB bandwidth of 45~nm from 1530~nm to 1575~nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10~nm in etch depth is achievable. The measurement results indicate that the alignment error of ±2~μ m results in less than 1~dB additional coupling loss.     

芦丁与血清白蛋白的作用研究

采用荧光光谱和紫外光谱研究了抗炎药物芦丁与牛血清白蛋白 (BSA)和人血清白蛋白 (HSA)的相互作用。通过二者荧光光谱的变化 ,求得药物与白蛋白作用的形成常数。探讨了它们之间的主要作用力类型。     

噻吩甲酰基吡唑啉酮缩β-丙氨酸配合物的合成、表征及极谱行为

在非水溶剂中 ,β 丙氨酸与 1 苯基 3 甲基 4 (2 噻吩甲酰基 )吡唑啉酮 5反应合成新型酰基吡唑啉酮席夫碱化合物 1 苯基 3 甲基 4 (2 噻吩甲酰基 )吡唑啉酮 5缩 β 丙氨酸 (HL) .通过回流席夫碱和金属硝酸盐合成了UO2 (Ⅱ )、Cu(Ⅱ )、Co(Ⅱ )和Fe(Ⅱ )金属配合物 .在乙酸 乙酸钠 (pH =4 .6 )缓冲溶液 饱和甘汞电极体系中 ,测量电位 - 1.2 4V处 ,测得铜配合物的极谱波 .元素分析及摩尔电导值表明 ,新配合物的组成为 [UO2 L2 ]·H2 O ,[CuL2 ]·2H2 O ,[CoL2 ]·2H2 O和 [FeL2 ]·2H2 O .运用红外光谱、紫外光谱、核磁共振谱、热谱和磁矩对配合物进行了表征 .结果表明 ,配合物的中心离子 (除UO2 2 + 以外 )均为 6配位 .铜配合物的Cu2 + 还原产生峰电流 ,其电极反应转移 1个电子 .     

Effects of interface kinetics and anisotropy on the stability of the growing crystal face and dissolution face during crystallization from solution under microgravity

The stability of the shapes of the growing crystal face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. Effects of the interface kinetics and anisotropy of crystallization and dissolution on the stability are also studied. It is proved that the stable shapes of crystal growth face and dissolution face do exist, which are of suitably shaped curves with their upper parts inclined backward properly no matter whether the interface kinetics and the anisotropy are taken into account or not. The stable shapes of the growing crystal faces and dissolution faces are calculated for various cases. The interface kinetics will make the inclination degree of stable crystal growth face reduce and that of stable dissolution face reduce slightly. The anisotropy of crystallization and dissolution may make the inclination degree of stable-growing crystal face smaller or larger, and that of the stable dissolution face varies very slightly.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

开链冠醚Schiff碱-锌配合物的合成与表征及其PL和EL特性

合成了一种含萘酚基的开链冠醚Schiff碱-锌配合物ZnL（其中配体化合物H2L是N,N’-双（2-羟基-1-萘亚甲基）03,6-二氧杂-1,8-三甘醇二胺）。通过元素分析、红外光谱、差热-热重分析、紫外吸收光谱、荧光光谱和循环伏安法对其结构和性质进行了表征,并成功地制备了基于该材料的电致发光器件。结果表明,ZnL配合物的溶液或固体薄膜在385nm紫外光激发下发光峰为455nm,电致发光器件的最大亮度达到650cd／m^2,在电压为9．5V左右,最大效率达到0．63cd／A。     

45kVA/2.4kV单相高温超导变压器的设计和试验

为了研究630kVA/10.5kV三相高温超导变压器突发短路情况下热稳定性以及机械稳定性的问题,开发了45kVA(2400V/160V,18.75A/281.25A)单相高温超导变压器.铁心为单相三柱式铁心;杜瓦为带有室温孔的玻璃钢杜瓦,可以保证铁心处在室温下并与绕组隔绝;导线采用Ag合金包套不锈钢加强Bi2223多芯高温超导带材,高压绕组为多层圆筒式绕组,各层间分别置有层间绝缘和冷却通道,低压绕组采用饼式结构;为减小引线的漏热,低压引线采用优化的气冷引线.采用有限单元法(FEM)分析了该变压器电磁、机械问题,并对其进行了基本的性能试验以及突发短路试验,得到重要意义的结果.     

Ce3+-冠醚配合物的紫外有机电致发光

采用5d-4f跃迁的稀土Ce³⁺-冠醚配合物(Ce-二环己基并-18-冠-6,Ce-DC18C6)作为发光掺杂剂,4,4'-二(9-咔唑基)联苯(CBP)为基质,设计制备了紫外发光器件:ITO/CuPc/Ce-DC18C6:CBP/Bu-PBD/LiF/Al,首次观测到峰位于376nm的Ce³⁺离子的紫外电致发光。通过对比器件的EL谱与Ce³⁺-冠醚配合物薄膜的PL谱发现,EL光谱中有部分来自Ce³⁺配合物中的Ce³⁺离子的。这种5d-4f电子跃迁的掺杂质量分数为3%时,该UV-发光器件的最大辐射功率为13μW/cm²。     

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.