Using a quantum dot system to realize perfect state transfer

There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler-London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST.     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Stationary properties of a single-mode laser system with non-Gaussian and Gaussian noise

A single-mode laser system with non-Gaussian and Gaussian noise is investigated. The stationary mean value and the normalized variance of the laser intensity are numerically calculated under the condition that the stationary probability distribution function (SPDF) is derived. The SPDF as a function of the laser intensity exhibits a maximum. The maximum becomes smaller with the increase of the correlation intensity or the non-Gaussian parameter, where the later is a measure of the deviation from the Gaussian characteristic. The maximum becomes larger as the correlation time increases. The laser intensity stationary mean value decreases with the increase of the correlation intensity or the non-Gaussian parameter while increases with the correlation time increasing. The laser intensity normalized variance increases with the increase of the correlation intensity or the non-Gaussian parameter while decreases as the correlation time increases.     

Analytic solutions to a finite width strip with a single edge crack of two-dimensional quasicrystals

In this paper, we investigate the well-known problem of a finite width strip with a single edge crack, which is useful in basic engineering and material science. By extending the configuration to a two-dimensional decagonal quasicrystal, we obtain the analytic solutions of modes I and II using the transcendental function conformal mapping technique. Our calculation results provide an accurate estimate of the stress intensity factors K_I and K_II, which can be expressed in a quite simple form and are essential in the fracture theory of quasicrystals. Meanwhile, we suggest a generalized cohesive force model for the configuration to a two-dimensional decagonal quasicrystal. The results may provide theoretical guidance for the fracture theory of two-dimensional decagonal quasicrystals.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

A novel optical polarimeter based on the signal width measurement of the waveform

For the optical polarimeter based on the structure of polarizer–Faraday modulator–analyzer, a novel method of optical rotation measurement was proposed by the waveform analysis of optical intensity signals. The calculation method of the optical rotation was provided by measuring the signal width of the waveform. Furthermore, the optical rotations of sugar solutions with different concentrations were measured by this method, and the fitting degree of obtained fitting curve is 0.9996. This showed that this method was effective.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

近场强度分布对线性相位反演算法复原效果的影响

利用数值仿真的方法详细的分析了近场强度分布对线性相位反演算法复原效果的影响.对近场强度分布分别为倾斜、环形和高斯随机型的情况下的复原结果与光强均匀时的复原结果进行对比,结果表明像倾斜型这种大部分为奇函数的近场强度分布对复原效果的影响比较恶劣;而像环形、随机型这样的偶函数或大部分为偶函数的近场强度分布对复原效果的影响则不...     

Terahertz coherent transition radiation based on an ultrashort electron bunching beam

The experimental result of terahertz (THz) coherent transition radiation generated from an ultrashort electron bunching beam is reported.During this experiment,the window for THz transmission from ultrahigh vacuum to free air is tested.The compact measurement system which can simultaneously test the THz wave power and frequency is built and proofed.With the help of improved Martin-Puplett interferometer and Kramers-Krong transform,the longitudinal bunch length is measured.The results show that the peak power of THz radiation wave is more than 80 kW,and its radiation frequency is from 0.1 THz to 1.5 THz.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.