Performance and Mechanism of Epoxy Resin for Reinforcement of Styrene–Butadiene Rubber

Styrene–butadiene rubber (SBR) vulcanizates reinforced by epoxy resin (EP) have been synthesized by an in-situ vulcanization and curing process. The influences of synthetic parameters, such as the contents of EP, carbon black, and types of compatilizers, on the microstructures, vulcanization, and mechanical properties of SBR have been investigated. It was found that EP in SBR exists in the form of a fibrillar interpenetrating network, which is important for the enhancement of mechanical properties of SBR. The experimental results showed that when the percentage of EP was in the range of 10–20%, the composite materials had the best comprehensive performance. In comparison with pure SBR, the tear strength and the tensile stress at 300% elongation of SBR-EP composite were increased significantly. The method can be applicable for other rubber vulcanizates to improve their mechanical properties.     

On the contact interaction between a strip-shaped punch and a linearly-deformable base through a covering of variable thickness

The contact problem of the frictionless penetration of a punch with strip-shaped section into the surface of a linearly-deformable base protected by a thin elastic layer (covering) of variable thickness, the stiffness of which is comparable to or smaller than that of the supporting elastic body, is investigated. A Fredholm integral equation of the second kind is obtained for the unknown contact pressure with a coefficient in front of the leading term that is a fairly arbitrary function of the longitudinal coordinate. To solve it the Bubnov-Galerkin projection method is used in which the coordinate elements are chosen to be a system of orthogonal polynomials and delta-shaped functions [1, 2] (variational-difference method), together with an algorithm for the required asymptotic expansions [3] when the above-mentioned coefficient is small. In the special case of an elastic half-space protected by a covering of constant thickness, the results obtained are compared with the corresponding characteristics given in [4].     

SUPPLEMENT TO “PASSAGE, BLOCKADE, SINK AND SOURCE OF A PLANAR DYNAMICAL SYSTEM”

A Theorem is given on the number of passages passing throgh a multiply-connected region,which corrects a wrong conjecture in a former paper of the author.     

A PICARD TYPE THEOREM AND BLOCH LAW

Ａ ＰＩＣＡＲＤ ＴＹＰＥ ＴＨＥＯＲＥＭ ＡＮＤ ＢＬＯＣＨ ＬＡＷ ￥ＹＥＹＡＳＨＥＮＧＡｂｓｔｒａｃｔ：Ａｐｉｃａｒｄｔｙｐｅｔｈｅｏｒｅｍｉｓｐｒｏｖｅｄ，ａｎｄａｃｏｕｎｔｅｒｅｘａｍｐｌｅｉｓｇｉｖｅｎｔｏｓｈｏｗｔｈａｔｔｈｅＢｏｌｃｈ...     

基于RBF网络信道均衡器

在数字通信系统中为了克服信道畸变引起的码间干扰，在接收端必须采用信道均衡技术。在本文中，我们将RBF网络用作均衡器。采用最近邻聚类和直接判决算法来调整隐藏层中心，然后再用LMS算法调整输出层的系数。该算法可以实现在线学习，根据相应的准则增加，删除隐藏层节点。算法事先不必确定隐藏层的节点个数。模拟结果显示，RBF网络均衡器能够正确地将信号从有噪信道中恢复出来，在计算机模拟仿真中其性能与理想贝叶斯均衡器相当。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Entropic uncertainty relation in neutrino oscillations

The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for...     

Optimal spectral phase control of femtosecond laser-induced up-conversion luminescence in Sm3+:NaYF4 glass

The spectral phase of the femtosecond laser field is an important parameter that affects the up-conversion(UC)luminescence efficiency of dopant lanthanide ions.In this work,we report an experi-mental study on controlling the UC lmiiinescence efficiency in Sm^3+:NaYF4 glass by 800-nm femtosec-ond laser pulse shaping using spectral phase modulation.The optimal phase control strategy efficiently enhances or suppresses the UC luminescence intensity.Based on the laser-power dependence of the UC luminescence intensity and its comparison with the luminescence spectrum under direct 266-nm fem-tosecond lciser irradiation,we propose herein an excitation model combining non-resonant two-photon absorption with resonance-media ted three-photon absorption to explain the experimental observations.     

埋层界面和空气表面和频光谱信号贡献的调控

本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型,观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团,发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH₂、-CH₃、-OCH₃和C=O,而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH₃和C=O基团. 随制膜浓度增大,埋层界面C=O基团的取向角从65°下降到43°,且浓度大于或等于0.5 wt%时,取向角等于45°±2°. 相比之下,空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下,表面等离激元可以极大地增强和频信号,尤其是来自埋层界面信号.