铜和铝离子/UV催化臭氧降解偶氮二异丁腈废水研究

利用多相催化臭氧(O3)工艺处理偶氮二异丁腈(AIBN)废水,探讨不同催化O3体系(Cu2+、Al3+、Cu2++Al3+/UV催化O3)对AIBN废水中氰类污染物的降解特性,并对不同催化O3体系的动力学特性进行研究。结果表明,金属离子对催化O3工艺的处理效率具有明显影响,不同催化O3工艺对CN-去除作用都呈现起始去除速率较高而后减弱的特点,其中Cu2+和Al3+共同催化O3工艺的整体去除率较高,优于单独Cu2+和Al3+的催化性能。这可能是由于p H变化、金属离子与CN-配合作用、金属离子和O3作用的综合影响结果。动力学研究结果表明,不同催化O3体系降解AIBN废水中的CN-污染物的氧化反应符合准一级动力学反应,表观反应速率常数k在0.0245~0.00301 min-1之间。     

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

A novel ultralow turnoff loss dual-gate silicon-on-insulator(SOI) lateral insulated gate bipolar transistor(LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored(CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop(Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss(Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoffand Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.     

背栅效应对SOI横向高压器件击穿特性的影响

提出一种SOI基背栅体内场降低BG REBULF(back-gate reduced BULk field)耐压技术. 其机理是背栅电压诱生界面电荷，调制有源区电场分布，降低体内漏端电场，提高体内源端电场，从而突破习用结构的纵向耐压限制，提高器件的击穿电压. 借助二维数值仿真，分析背栅效应对厚膜高压SOI LDMOS (>600V) 击穿特性的影响，在背栅电压为330V时，实现器件击穿电压1020V，较习用结构提高47.83%. 该技术的提出，为600V以上级SOI基高压功率器件和高压集成电路的实现提供了一种新的设计思路. 关键词： SOI 背栅 体内场降低 LDMOS     

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.     

天然产物Luxenchalcone的全合成

以对羟基苯甲醛和2,4-二羟基苯乙酮为起始原料,经过甲氧甲基化、溴代、Ullmann反应、羟醛缩合和脱保护等反应,完成了天然产物双查尔酮Luxenchalcone的全合成,关键步骤为Ullmann反应,重要中间体和目标产物的化学结构经 ¹H NMR,¹³C NMR和ESI-MS等表征确认.     

电荷非平衡super junction结构电场分布

建立了电荷非平衡情况下super junction(SJ)耐压结构的二维电场分布理论模型. 获得了浓度和宽度非平衡、梯形n-/p- 区和横向线性缓变掺杂三种非平衡SJ结构的电场分布. 理论分析结果与二维器件数值仿真软件MEDICI的仿真结果符合良好. 虽然给出的电场分布为三角级数形式, 但仍能从中获得很多重要信息. 特别地, 由此可求出非平衡SJ结构的峰值电场和耐压. 该结果有助于对SJ结构的深入分析. 关键词： super junction 电场分布 电荷非平衡