基于驻留时间补偿的抛光误差控制方法

 针对计算机控制光学表面成形中光学表面存在中高频误差的问题,提出了一种基于驻留时间补偿的有效控制方法。分析了抛光误差的形成机理和影响因素,对系统的误差影响因素进行分类和定量描述,构建了抛光过程中磨损影响因子、浓度变化影响因子和系统影响因子。基于各影响因素的影响因子对抛光驻留时间的求解函数进行了修正,提出采用离散最小二乘法对修正的函数求解驻留时间。研究表明：这种补偿方法能提高计算机控制光学表面成形技术中加工模型的精度,减小光学表面的残余误差。     

蒙特卡罗模拟光通过大气后的时间分布

采用蒙特卡罗方法模拟了光通过光学特性参数不同的大气后透射光时间分布.分析了大气的散射系数、吸收系数、不对称因子及折射率对透射光时间分布的影响.结果表明:透射光时间分布曲线存在两个峰,分别对应子弹光与漫射光.各光学参数界定了子弹光、蛇形光、漫射光的大小和时间范围,并从统计模拟的角度解释了折射率大的大气中难以成像的因为.     

面心立方铁纳米粒子的相变与并合行为的分子动力学研究

本文采用分子动力学模拟结合Finnis-Sinclair多体势研究了面心立方铁纳米粒子在加温过程中的相变与并合行为. 模拟结果表明: 纳米粒子在熔化之前均发生了由面心立方至体心立方的马氏体相变; 大小相等的两纳米粒子在并合之前发生了相对转动; 而大小不等的两纳米粒子在并合过程中并未出现转动, 小纳米粒子倾向于吸附在大纳米粒子上, 并随着温度的升高而熔化, 最终形成更大的纳米粒子. 关键词： 纳米粒子 相变 并合 分子动力学     

量子点环嵌入Aharonov-Bohm干涉器中电子的退耦合态及反共振现象

采用Anderson模型哈密顿量和非平衡态格林函数方法对量子点环以不同构型嵌入A-B干涉器中电子输运的退耦合态及反共振现象进行了理论研究. 结果表明,量子点环A-B干涉器的结构对称性以及穿过A-B干涉器的磁通量是诱发退耦合现象的两种物理机理. 耦合量子点结构的对称性越高,体系在相干电子输运过程中表现出来的退耦合及反共振现象越明显. 而且在具有高度对称性的耦合量子点结构中,通过磁场调节体系的结构参数可以分别使第奇数或第偶数分子本征态从电极上退耦合,从而使电子输运电导表现出奇偶对等振荡现象. 这为设计纳米电子开关器件提供了一个新的物理模型. 关键词： 量子点环 A-B干涉器 退耦合 反共振     

Using a quantum dot system to realize perfect state transfer

There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler-London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST.     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Stationary properties of a single-mode laser system with non-Gaussian and Gaussian noise

A single-mode laser system with non-Gaussian and Gaussian noise is investigated. The stationary mean value and the normalized variance of the laser intensity are numerically calculated under the condition that the stationary probability distribution function (SPDF) is derived. The SPDF as a function of the laser intensity exhibits a maximum. The maximum becomes smaller with the increase of the correlation intensity or the non-Gaussian parameter, where the later is a measure of the deviation from the Gaussian characteristic. The maximum becomes larger as the correlation time increases. The laser intensity stationary mean value decreases with the increase of the correlation intensity or the non-Gaussian parameter while increases with the correlation time increasing. The laser intensity normalized variance increases with the increase of the correlation intensity or the non-Gaussian parameter while decreases as the correlation time increases.     

Analytic solutions to a finite width strip with a single edge crack of two-dimensional quasicrystals

In this paper, we investigate the well-known problem of a finite width strip with a single edge crack, which is useful in basic engineering and material science. By extending the configuration to a two-dimensional decagonal quasicrystal, we obtain the analytic solutions of modes I and II using the transcendental function conformal mapping technique. Our calculation results provide an accurate estimate of the stress intensity factors K_I and K_II, which can be expressed in a quite simple form and are essential in the fracture theory of quasicrystals. Meanwhile, we suggest a generalized cohesive force model for the configuration to a two-dimensional decagonal quasicrystal. The results may provide theoretical guidance for the fracture theory of two-dimensional decagonal quasicrystals.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

A novel optical polarimeter based on the signal width measurement of the waveform

For the optical polarimeter based on the structure of polarizer–Faraday modulator–analyzer, a novel method of optical rotation measurement was proposed by the waveform analysis of optical intensity signals. The calculation method of the optical rotation was provided by measuring the signal width of the waveform. Furthermore, the optical rotations of sugar solutions with different concentrations were measured by this method, and the fitting degree of obtained fitting curve is 0.9996. This showed that this method was effective.