基于路径选择的深海水下运动目标被动深度估计

深海水下运动目标的深度估计是目标分辨与识别中的重要一环。基于深海运动目标在深海中的直达波与海面反射波的到达时延与位置之间的关系,寻找时延图上运动目标的候选路径,利用候选路径模拟目标的运动路径,提出了一种可用单水听器实现的水下运动目标深度估计方法。通过用候选路径的估计时延与实际接收时延的比较对路径进行筛选,从而减少了需要的位置先验信息。2018年在南中国海进行的深海实验数据处理的结果表明该估计方法可行,对于实验中距离15 km以内的拖曳声源,深度相对估计误差可以达到15%以内。     

小直径棒材超声横波检测仿真分析

采用超声水浸聚焦斜入射方式进行小棒材表面、近表缺陷检测时,声波在水/棒和棒/缺陷界面会发生反射、折射、散射、衍射及波形转换等一系列物理变换。此时缺陷可检性对声波入射条件十分敏感,常出现由于检测条件设置不当而导致缺陷漏检、误检的情况。为解决这一问题,本文针对小棒材超声斜入射检测中的主要参数——入射角和水距,开展声场及缺陷声响应仿真,研究检测参数对不同部位缺陷检测能力的影响,并对仿真结果进行试验验证。通过研究得到了检测水距、入射角度对缺陷检测能力的影响,并得到最优检测条件。试验验证结果表明研究制定的检测方案可有效检测出表面、近表面裂纹缺陷。     

Soliton molecules and the CRE method in the extended mKdV equation

The soliton molecules of the(1+1)-dimensional extended modified Korteweg–de Vries(mKdV)system are obtained by a new resonance condition, which is called velocity resonance. One soliton molecule and interaction between a soliton molecule and one-soliton are displayed by selecting suitable parameters. The soliton molecules including the bright and bright soliton, the dark and bright soliton, and the dark and dark soliton are exhibited in figures 1–3, respectively.Meanwhile, the nonlocal symmetry of the extended mKdV equation is derived by the truncated Painlevé method. The consistent Riccati expansion(CRE) method is applied to the extended mKdV equation. It demonstrates that the extended mKdV equation is a CRE solvable system. A nonauto-B?cklund theorem and interaction between one-soliton and cnoidal waves are generated by the CRE method.     

New interaction solutions and nonlocal symmetry of an equation combining the modified Calogero–Bogoyavlenskii–Schiff equation with its negative-order form

The nonlocal symmetry is derived for an equation combining the modified Calogero–Bogoyavlenskii–Schiff equation with its negative-order form from the truncated Painlevéexpansion method. The nonlocal symmetries are localized to the Lie point symmetry by introducing new auxiliary dependent variables. The finite symmetry transformation and the Lie point symmetry for the prolonged system are solved directly. Many new interaction solutions among soliton and other types of interaction solutions for the modified Calogero–Bogoyavlenskii–Schiff equation with its negative-order form can be obtained from the consistent condition of the consistent tanh expansion method by selecting the proper arbitrary constants.     

Numerical approach for the evolution of spin-boson systems and its application to the Buck–Sukumar model

We study the evolution properties of spin-boson systems by a systematic numerical iteration approach, which performs well in the whole coupling regime. This approach evaluates a set of coefficients in the formal expression of the time-dependent Schr?dinger equation by expanding the initial state in Fock space. This set of coefficients is unique for the spin-boson Hamiltonian studied, allowing one to calculate the time evolution from different initial states. To complement our numerical calculations, we apply the method to the Buck–Sukumar model. We find that when the ground-state energy of the model is unbounded and no ground state exists in a certain parameter space, the time evolution of the physical quantities is naturally unstable.     

竖直恒温面自然对流边界层不稳定性研究

在无扰动、随机式扰动以及正弦式扰动下,通过对竖直恒温面处状态Ra为1.328×10^9、Pr为6.24的自然对流进行模拟,探索了热边界层的不稳定性和共振强化自然对流换热。结果表明:(1)竖直自然对流边界层上游位置的随机式扰动对热边界层的影响主要体现在稳定阶段;(2)该状态下的竖直自然对流边界层的特征频率为15 067,且相比于无扰动状态,频率为15 067的正弦式扰动能在竖直恒温面处提高5.15%的换热量;(3)在竖直自然对流边界层上游位置加入特征频率的正弦式扰动,竖直恒温面处的局部努塞尔数Nu均出现明显波动,且波动随着边界层高度的增加而增大。     

电枢参数对电枢超导型高温超导电机性能的影响

高温超导材料存在背景磁场依赖性和各向异性的问题,针对超导感应电机采用双层绕组结构,提出了双重镜像法建立开口矩形槽内漏磁场垂直方向和水平方向的解析模型,利用该模型研究了超导线圈在传输不同电流情况下磁场分布规律,揭示了开口矩形槽电磁结构参数对槽内超导线圈所受表面磁场的影响规律。研究结果表明,适当增大槽宽尺寸可以有效降低超导线圈表面所受最大磁场,传输电流和线圈匝数均能够近乎线性增大超导线圈表面所受最大磁场。     

Cascaded homojunction avalanche photodiodes

The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device's performance.