Contact mechanics modeling of piezo-actuated stick-slip microdrives

This paper draws a line from early attempts of modeling stick-slip microdrives to open questions from today’s research. As a basis, it contains a collection of substantial investigations on piezo-actuated stick-slip microdrives for nanomanipulation purposes. Friction models showing special characteristics and their mathematical representations are reviewed. It is found that the working properties of stick-slip drives strongly depend on friction characteristics of the contact points between the guiding elements, which is known for years. However, numerous publications in the field of friction and remaining problems — which cannot be explained by known friction models — indicate that there is a demand for even more friction-related research.Former attempts to model stick-slip drives are based on the so-called LuGre friction model, which is shortly presented. An empirical model called CEIM is also analyzed. It is an adaption of the elastoplastic model. The latter can cover not only the phenomenon “0-amplitude’ (described by the authors in recent publications), but also stick-slip based force generation scenarios. Nevertheless, interesting friction characteristics such as the generation of μN forces with stick-slip drives, which are already proven, cannot be covered by known friction models. It is pointed out which characteristics have to be considered.     

Einstein-Hopf drag,Doppler shift of thermal radiation and blackbody drag: Three perspectives on quantum friction

The thermal friction force acting on an atom moving relative to a thermal photon bath has recently been calculated on the basis of the fluctuation-dissipation theorem. The thermal fluctuations of the electromagnetic field give rise to a drag force on an atom provided one allows for dissipation of the field energy via spontaneous emission. The drag force exists if the atomic polarizability has a nonvanishing imaginary part. Here, we explore alternative derivations. The damping of the motion of a simple harmonic oscillator is described by radiative reaction theory (result of Einstein and Hopf), taking into account the known stochastic fluctuations of the electromagnetic field. Describing the excitations of the atom as an ensemble of damped harmonic oscillators, we identify the previously found expressions as generalizations of the Einstein-Hopf result. In addition, we present a simple explanation for blackbody friction in terms of a Doppler shift of the thermal radiation in the inertial frame of the moving atom: The atom absorbs blue-shifted photons from the front and radiates off energy in all directions, thereby losing energy. The original plus the two alternative derivations provide for additional confirmation of an intriguing quantum friction effect, and leave no doubt regarding its existence.     

Superhydrophobic nickel films fabricated by electro and electroless deposition

In this work, a superhydrophobic nickel surface is fabricated by coupling electro and electroless deposition without chemical modification. SEM study reveals that electrodeposited nickel surface is characterized by nanocone arrays and has a contact angle of about 135°. After adding electroless deposition, as the second step, hemispherically topped nickel nanocone arrays are formed which leads to a high contact angle of 153.6°. That is, nickel surface has successfully transformed from hydrophobic to superhydrophobic. This transition is investigated both from the aspects of chemical composition and surface structure and proves the latter is the dominant factor. The present study inspires us to do more research about the creation of rough surfaces and enriches our comprehension about superhydrophobicity.     

HG-AFS测定地质样品中的总硒

采用王水消解法处理样品,用氢化物发生-原子荧光光谱法测定土壤中总硒的含量,取得了较满意的效果,并与硝酸-高氯酸电热板消解法进行了对比分析,得出结论:王水消解法不仅操作简单、省时,而且总硒测定的准确度也高于硝酸-高氯酸电热板消解法,为大量地质样品中总硒含量的测定提供了一种简便可行的方法.     

晶格中心插入体的对称性及取向对二维声子晶体带隙的影响

以二维钢/气体系声子晶体为模型,采用平面波法研究了圆柱正方及六角晶格中心添加插入体的对称性及取向与带隙的关系,给出了四方、六方、八方及圆柱插入体结构的带隙分布图及带隙随柱体取向的变化关系图.发现在低填充率条件下,插入体的截面形状与晶格类型相同时最有利于能带简并态的分离而获得带隙,但填充率较高时,采用高对称性的插入体可以获得最宽的带隙.正方晶格中心插入体取向对带隙的影响要比在六角晶格中更为显著.对四方柱正方晶格声子晶体的研究表明,仅旋转原柱体要比在其中心插入柱体后旋转更容易获得低频宽带隙,单独运用添加柱体或旋转非圆柱体来降低晶格对称性以获取低频带隙的方法要比同时使用两种方法效果更好.此外,从机理上对计算结果进行了解释.     

蒙特卡罗模拟中相关变量随机数序列的产生方法

蒙特卡罗模拟有时需要对多维相关随机变量进行模拟抽样．本文介绍基于Choesky因子线性变换一非线性变换产生具有指定边缘分布和相关系数的多维相关随机变量抽样序列的一般方法,给出一种简单易行的高效数值实现途径和一些模拟结果．模拟结果表明,该方法产生的各随机变量抽样序列间具有预期要求的相关性,并能通过指定边缘分布Kolmogorov—Smimov非参数假设检验．对该方法应用中的一些限制问题进行了讨论．     

Quantum correlations between two non-interacting atoms under the influence of a thermal environment

By considering a double Jaynes-Cummings model,we investigate the dynamics of quantum correlations,such as the quantum discord and the entanglement,for two atoms in their respective noisy environments,and study the effect of the purity and the cavity temperature on the quantum correlations.The results show that the entanglement suffers sudden death and revival,however the quantum discord can still reveal the quantum correlations between the two atoms in the region where the entanglement is zero.Moreover,when the temperature of each cavity is high the entanglement dies out in a short time,but the quantum discord still survives for quite a long time.It means that the quantum discord is more resistant to environmental disturbance than the entanglement at higher temperatures.     

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n~+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively.     

High-order harmonic generation with a two-color laser pulse

We theoretically investigate the electron dynamics of the high-order harmonics generation process by combining a near-infrared 800 nm driving pulse with a mid-infrared 2000 nm control field.We also investigate the emission time of harmonics using time-frequency analysis to illustrate the physical mechanisms of high-order harmonic generation.We calculate the ionization rate using the Ammosov-Delone-Krainov model and interpret the variations in harmonic intensity for different control field strengths and delays.We find that the width of the harmonic plateau can be extended when the control electric field is added,and a supercontinuum from 198 to 435 eV is generated,from which an isolated 61-as pulse can be directly obtained.