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81.
By using the dual vortex method (DVM), we develop systematically a simple and effective scheme to use the vortex degree of freedoms on dual lattices to characterize the symmetry breaking patterns of the boson insulating states in the direct lattices. Then we apply our scheme to study quantum phases and phase transitions in an extended boson Hubbard model slightly away from 1/3 (2/3) filling on frustrated lattices such as triangular and Kagome lattice. In a triangular lattice at 1/3, we find a X-CDW, a stripe CDW phase which was found previously by a density operator formalism (DOF). Most importantly, we also find a new CDW-VB phase which has both local CDW and local VB orders, in sharp contrast to a bubble CDW phase found previously by the DOF. In the Kagome lattice at 1/3, we find a VBS phase and a 6-fold CDW phase. Most importantly, we also identify a CDW-VB phase which has both local CDW and local VB orders which was found in previous QMC simulations. We also study several other phases which are not found by the DVM. By analyzing carefully the saddle point structures of the dual gauge fields in the translational symmetry breaking sides and pushing the effective actions slightly away from the commensurate filling f=1/3(2/3), we classified all the possible types of supersolids and analyze their stability conditions. In a triangular lattice, there are X-CDW supersolid, stripe CDW supersolid, but absence of any valence bond supersolid (VB-SS). There are also a new kind of supersolid: CDW-VB supersolid. In a Kagome lattice, there are 6-fold CDW supersolid, stripe CDW supersolid, but absence of any valence bond supersolid (VB-SS). There are also a new kind of supersolid: CDW-VB supersolid. We show that independent of the types of the SS, the quantum phase transitions from solids to supersolids driven by a chemical potential are in the same universality class as that from a Mott insulator to a superfluid, therefore have exact exponents z=2, ν=1/2, η=0 (with logarithmic corrections). Excitation spectra of all these insulating phases and supersolid phases are also studied. Implications on QMC simulations with both nearest neighbor and next nearest neighbor interactions in both lattices are given. Some possible intrinsic problems of the DOF in identifying the insulating phases are also pointed out. 相似文献
82.
Linzhong Ye 《Journal of Macromolecular Science: Physics》2013,52(9):1771-1779
Styrene–butadiene rubber (SBR) vulcanizates reinforced by epoxy resin (EP) have been synthesized by an in-situ vulcanization and curing process. The influences of synthetic parameters, such as the contents of EP, carbon black, and types of compatilizers, on the microstructures, vulcanization, and mechanical properties of SBR have been investigated. It was found that EP in SBR exists in the form of a fibrillar interpenetrating network, which is important for the enhancement of mechanical properties of SBR. The experimental results showed that when the percentage of EP was in the range of 10–20%, the composite materials had the best comprehensive performance. In comparison with pure SBR, the tear strength and the tensile stress at 300% elongation of SBR-EP composite were increased significantly. The method can be applicable for other rubber vulcanizates to improve their mechanical properties. 相似文献
83.
N. V. Generalova Ye. V. Kovalenko 《Journal of Applied Mathematics and Mechanics》1994,58(6):1069-1078
The contact problem of the frictionless penetration of a punch with strip-shaped section into the surface of a linearly-deformable base protected by a thin elastic layer (covering) of variable thickness, the stiffness of which is comparable to or smaller than that of the supporting elastic body, is investigated. A Fredholm integral equation of the second kind is obtained for the unknown contact pressure with a coefficient in front of the leading term that is a fairly arbitrary function of the longitudinal coordinate. To solve it the Bubnov-Galerkin projection method is used in which the coordinate elements are chosen to be a system of orthogonal polynomials and delta-shaped functions [1, 2] (variational-difference method), together with an algorithm for the required asymptotic expansions [3] when the above-mentioned coefficient is small. In the special case of an elastic half-space protected by a covering of constant thickness, the results obtained are compared with the corresponding characteristics given in [4]. 相似文献
84.
Ye Yanqian 《数学年刊B辑(英文版)》1994,15(4):489-492
A Theorem is given on the number of passages passing throgh a multiply-connected region,which corrects a wrong conjecture in a former paper of the author. 相似文献
85.
A PICARD TYPE THEOREM AND BLOCH LAW 总被引:9,自引:0,他引:9
Ye Yasheng 《数学年刊B辑(英文版)》1994,15(1):75-80
A PICARD TYPE THEOREM AND BLOCH LAW ¥YEYASHENGAbstract:Apicardtypetheoremisproved,andacounterexampleisgiventoshowthattheBolch... 相似文献
86.
在数字通信系统中为了克服信道畸变引起的码间干扰,在接收端必须采用信道均衡技术。在本文中,我们将RBF网络用作均衡器。采用最近邻聚类和直接判决算法来调整隐藏层中心,然后再用LMS算法调整输出层的系数。该算法可以实现在线学习,根据相应的准则增加,删除隐藏层节点。算法事先不必确定隐藏层的节点个数。模拟结果显示,RBF网络均衡器能够正确地将信号从有噪信道中恢复出来,在计算机模拟仿真中其性能与理想贝叶斯均衡器相当。 相似文献
87.
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×1015 cm-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA. 相似文献
89.
Wang Dong Ming Fei Song Xue-Ke Ye Liu Chen Jing-Ling 《The European Physical Journal C - Particles and Fields》2020,80(8):1-16
The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for... 相似文献
90.
Jian-Ping Li Lian-Zhong Deng Ye Zheng Peng-Peng Ding Tian-Qing Jia Zhen-Rong Sun Jian-Rong Qiu Shi-An Zhang 《Frontiers of Physics》2020,15(2):22603-68
The spectral phase of the femtosecond laser field is an important parameter that affects the up-conversion(UC)luminescence efficiency of dopant lanthanide ions.In this work,we report an experi-mental study on controlling the UC lmiiinescence efficiency in Sm^3+:NaYF4 glass by 800-nm femtosec-ond laser pulse shaping using spectral phase modulation.The optimal phase control strategy efficiently enhances or suppresses the UC luminescence intensity.Based on the laser-power dependence of the UC luminescence intensity and its comparison with the luminescence spectrum under direct 266-nm fem-tosecond lciser irradiation,we propose herein an excitation model combining non-resonant two-photon absorption with resonance-media ted three-photon absorption to explain the experimental observations. 相似文献