光学表面非均匀中频误差的评价与修正

针对光学元件使用过程中中频误差将导致光学元件的激光破坏这一问题,提出一种中频误差突出频率提取方法。采用基于统计学的多样本数据处理,对于每一种采样方向都可以得到数个较为突出的不合格频率。利用这些频率进行确定性加工后,在特定方向,空间频率0.044 1 mm-1,0.085 8 mm-1,0.041 7 mm-1所出现的不合格次数分别降至加工前的23.9%,18.3%,29.2%,而整体中频误差减少至50.1%。结果表明,此方法降低了由光学表面中频误差方向性与局部性引起的不确定性。     

2-(4-氟代苯甲酰基)苯甲酸-铕配合物的合成、结构表征及荧光性能的研究

以硝酸铕、2-(4-氟代苯甲酰基)苯甲酸(HL)、1,10-菲咯啉(Phen)和三苯基氧膦(TPPO)合成了EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅三种固态配合物。用元素分析、红外光谱、核磁共振氢谱对配合物进行了组分确定和结构表征。IR表明,2-(4-氟代苯甲酰基)苯甲酸与Eu3+形成配合物后,位于1 692 cm-1处羧基的ν_CO峰消失,2 500～3 200 cm-1处羧基的ν_O—H峰也消失,出现了羧酸盐特有的反对称伸缩振动吸收峰(ν_as(CO-₂))和对称伸缩振动吸收峰(ν_s(CO-₂)),且Δν(ν_as(CO-₂)-ν_s(CO-₂))与钠盐的Δν相近,说明羧酸根与Eu3+以对称双齿桥式配位。在1H NMR中,形成配合物后第一配体苯环上的质子峰变为宽峰且移向高场,Phen和TPPO中质子化学位移移向低场。室温下测定了配合物的荧光激发光谱和发射光谱,激发光谱表明配合物EuL₃(H₂O)₆,EuL₃Phen(H₂O)₄和EuL₃(TPPO)(H₂O)₅的最佳激发波长分别为353.0,355.0和357.0 nm;发射光谱均显示Eu3+离子的特征发射光谱,且表明Phen对Eu3+离子的荧光发射有明显增强作用。     

HL-2M 装置运行控制技术初步研究

重点介绍了 HL-2M 装置的运行技术和初步的等离子体控制实验结果,包括等离子体放电方案设计、 线圈电流控制、击穿阶段零场匹配和等离子体电流以及位移的控制。为了降低放电运行风险,HL-2M 装置初始放 电采用了简化的放电方案,通过整定 PID 参数实现了线圈电流控制,在击穿阶段获得了 10V 以上的环电压和较大 范围的零场区域,成功实现等离子体击穿。最后,投入了等离子体电流和水平位移反馈控制算法,成功将等离子 体放电脉宽提升至 200ms 以上,且维持 I_p≥100kA 的时间超过了 100ms,上述结果表明 HL-2M 装置运行控制技术 得到了初步的检验。      

基于数学形态学的表面原子熔融相的 STM图像识别算法

高温扫描隧道显微镜(HT-STM)可以实时原位地捕捉到表面原子的熔化相变过程.在这一原位变温实验中,快速可靠地识别出每帧STM图像中的熔融相十分关键.传统的手工统计方法存在效率低下、随意性大等问题.我们发展出一套基于数学形态学的算法,来自动快速地识别.与人工方法相比,该算法消除了人为主观误差,使确定的边界更加准确、光滑,处理效率提高了266倍.     

The relation between the radii and the densities of magnetic skyrmions

Compared with the traditional magnetic bubble, a skyrmion has a smaller size, and better stability and therefore is considered as a very promising candidate for future memory devices. When skyrmions are manipulated, erased and created, the density of skyrmions can be varied, however the relationship between the radii and the densities of skyrmions needs more exploration. In this paper, we study this problem both theoretically and by using the lattice simulation. The average radius of skyrmions as a function of material parameters, the strength of the external magnetic field and the density of skyrmions is obtained and verified. With this explicit function, the skyrmion radius can be easily predicted, which is helpful for the future study of skyrmion memory devices.     

GaN基p-i-n型雪崩探测器的制备与表征

制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...     

Configuration of the valence neutrons of 17B

The reaction cross section of ~(17)B on ~(12)C target at(43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou(RIBLL).The root-mean-square matter radius(R_(rms))was deduced to be(2.92±0.10)fm,while the R_(rms)of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively.Assuming a"core plus 2n"structure in ~(17)B,the mixed configuration of(2s_(1/2))and(1d_(1/2))of the valence neutrons is studied and the s-wave spectroscopic factor is found to be(80±21)%.     

Adaptive synchronization of chaos in permanent magnet synchronous motors based on passivity theory

An adaptive synchronization control method is proposed for chaotic permanent magnet synchronous motors based on the property of a passive system. We prove that the controller makes the synchronization error system between the driving and the response systems not only passive but also asymptotically stable. The simulation results show that the proposed method is effective and robust against uncertainties in the systemic parameters.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

铜铟镓硒太阳能电池多层膜的结构分析

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光（XRF）结果表明,电池效率最高的CIGS层中In,Ga比例为In：Ga=0．7：0.3;X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．