随机发展方程适度解的存在唯一性(Ⅱ)

讨论如下Hilbert空间中的半线性随机发展方程的Cauchy问题 dy(t)=[Ay(t) f(t,y(t))]dt G(t,y(t))dw(t) y(O)=V_u的适度解的存在唯一性,在更一般的条件下,得到了该问题的适度解的存在唯一性。     

双层桥梁耦合系统的强迫振动

本文研究作为双层桥模型的梁方程耦合系统，利用Ｌｅｒａｙ－Ｓｃｈａｕｄｅｒ不动点定理，得到了一个关于这种系统的解的存在性定理，它类似于ＭｃＫｅｎｎａ和Ｗａｌｔｅｒ文２中关于吊桥方程的一个定理。     

TZT/AC/PMMA体系光谱烧孔及激光诱导的填孔效应的研究

报道四苯并卟啉锌/芳晴/有机玻璃TZT/AC/PMMA体系光化学烧孔的光谱稳定性、多重烧孔及激光诱导的填孔效应。 关键词：     

Local and Parallel Finite Element Algorithms for Eigenvalue Problems

Abstract Some new local and parallel finite element algorithms are proposed and analyzed in this paper foreigenvalue problems.With these algorithms, the solution of an eigenvalue problem on a fine grid is reduced tothe solution of an eigenvalue problem on a relatively coarse grid together with solutions of some linear algebraicsystems on fine grid by using some local and parallel procedure.A theoretical tool for analyzing these algorithmsis some local error estimate that is also obtained in this paper for finite element approximations of eigenvectorson general shape-regular grids.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Ag+掺杂的立方相Y2O3:Eu纳米晶体粉末发光强度研究

采用化学自燃烧法制备了不同Ag⁺掺杂浓度的Y₂O₃:Eu纳米晶体粉末样品(［Y³⁺］∶［Eu³⁺］∶［Ag⁺］=99∶1∶X，X=0—3.5×10^-2)，以及通过退火处理得到了相应的体材料.根据X射线衍射谱确定所得纳米和体材料样品均为纯立方相.实验表明在纳米尺寸样品中随着Ag离子浓度的增加，荧光发射强度随之增加，当X=2×10^-2时达到最大值，其发光强度比X=0时提高了近50%.当Ag离子浓度继续增加，样品发光强度保持不变.在相应的体材料样品中则没有观察到此现象.通过对各样品的发射光谱，激发光谱，X射线衍射图谱，透射电镜(TEM)照片和荧光衰减曲线的研究，分析了引起纳米样品荧光强度变化的原因是由于Ag离子与表面悬键氧结合，从而使这一无辐射通道阻断，使发光中心Eu³⁺的量子效率提高；Ag⁺的引入所带来的另一个效应是使激发更为有效.这两方面原因使发光效率得到了提高.     

共沉淀法制备Y_2O_2S∶Eu~(3+),Mg~(2+),Ti~(4+)红色长余辉材料

用共沉淀法制备了Y2O2S∶Eu3 ,Mg2 ,Ti4 红色长余辉材料。测量了材料的电子显微形貌、晶体结构和发射光谱。通过与固相法制备的Y2O2S∶Eu3 ,Mg2 ,Ti4 长余辉材料比较,发现两种方法都可以制备粒度基本相同的纯相Y2O2S基质晶体,但共沉淀法样品的颗粒结构更松散。研究了Eu3 浓度对两种方法制备样品的谱线发射强度的影响,通过比较共沉淀法和高温固相法制备的样品中Eu3 的5D1→7F3较高能级跃迁的587.6 nm谱线强度随Eu3 浓度的变化,发现共沉淀法更有利于Eu3 均匀进入Y2O2S基质晶格而形成有效的发光中心。     

Ni(111)表面一氧化碳和氢共吸附的密度泛函理论研究

本文用密度泛函理论(DFT)的总能计算研究了一氧化碳和氢原子在Ni(111)表面上p(2×2)共吸附系统的原子结构和电子态，结果表明CO和H原子分别被吸附于两个对角p(1×1)元胞的hcp和fcc位置.以氢分子和CO分子作为能量参考点，总吸附能为2.81 eV，相应的共吸附表面功函数φ为6.28 eV.计算得到的C—O，C—Ni和H—Ni的键长分别是1.19?, 1.96?和 1.71?，并且CO分子以C原子处于hcp的谷位与金属衬底原子结合.衬底Ni(111)的最外两层的晶面间距在吸附后的相对变化分别是 关键词： Fisher-Tropsch反应 催化作用 Ni(111) p(2×2)/(CO+H) 共吸附     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid

This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins （1963） and Dean （1979） in the study of random surface waves and by Song （2004） in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts： the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song （2004） for second-order random wave solutions for internal waves in a two-layer fluid as a particular case.