全文获取类型
收费全文 | 26151篇 |
免费 | 4607篇 |
国内免费 | 2822篇 |
专业分类
化学 | 18484篇 |
晶体学 | 286篇 |
力学 | 1433篇 |
综合类 | 161篇 |
数学 | 2904篇 |
物理学 | 10312篇 |
出版年
2024年 | 89篇 |
2023年 | 539篇 |
2022年 | 976篇 |
2021年 | 1048篇 |
2020年 | 1049篇 |
2019年 | 1063篇 |
2018年 | 1019篇 |
2017年 | 863篇 |
2016年 | 1322篇 |
2015年 | 1294篇 |
2014年 | 1533篇 |
2013年 | 1916篇 |
2012年 | 2390篇 |
2011年 | 2475篇 |
2010年 | 1667篇 |
2009年 | 1499篇 |
2008年 | 1711篇 |
2007年 | 1488篇 |
2006年 | 1369篇 |
2005年 | 1123篇 |
2004年 | 872篇 |
2003年 | 701篇 |
2002年 | 776篇 |
2001年 | 580篇 |
2000年 | 417篇 |
1999年 | 523篇 |
1998年 | 363篇 |
1997年 | 360篇 |
1996年 | 360篇 |
1995年 | 318篇 |
1994年 | 264篇 |
1993年 | 251篇 |
1992年 | 181篇 |
1991年 | 192篇 |
1990年 | 165篇 |
1989年 | 121篇 |
1988年 | 100篇 |
1987年 | 81篇 |
1986年 | 74篇 |
1985年 | 68篇 |
1984年 | 64篇 |
1983年 | 36篇 |
1982年 | 34篇 |
1981年 | 26篇 |
1980年 | 26篇 |
1978年 | 13篇 |
1976年 | 16篇 |
1975年 | 15篇 |
1973年 | 15篇 |
1968年 | 14篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
881.
Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor 下载免费PDF全文
This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit. 相似文献
882.
The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics 下载免费PDF全文
The fringing-induced barrier lowering(FIBL) effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain(LDD) overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect. 相似文献
883.
Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica 下载免费PDF全文
Two methods:high-power,short-time,single-shot irradiation(Method A) and low-power,long-time,multi-shot irradiation(Method B) are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds(LIDTs) of the mitigated sites are tested with a 355-nm,6.4-ns Nd:YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd:YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results. 相似文献
884.
Effects of carbon convection field on large diamond growth under high-pressure high-temperature conditions 下载免费PDF全文
Large diamond crystals were successfully synthesized by FeNi-C system using temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of seed crystal in the melted catalyst/solvent. The results indicate that morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, finite element method was applied to analyze carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond. 相似文献
885.
在尖晶石钒基氧化物AV_2O_4中,因为自旋阻挫、轨道序、巡游性等独特的内禀属性间存在着相互合作和竞争,所以该体系常常表现出复杂而有趣的物理现象。通过对A位磁性离子的调控,我们详细研究该体系中不同物性的起源,比如磁相变与结构相变的不同起因,局域和巡游电子的交叉行为等等。我们以Mn_(1-x)Co_x V_2O_4和Fe_(1-x)Co_x V_2O_4体系为研究对象,通过变温X射线衍射、磁化率、比热和中子散射等测试手段,结合第一性原理计算,对其物性起源进行了详细的研究。我们发现:(i)在低Co2+离子掺杂时,体系受到局域V~(3+)离子以及A位Fe~(2+)离子的轨道序作用,往往会在磁有序附近伴随着结构相变的出现,以至于弱化体系中钒离子独立形成的四面体造成的几何阻挫。这也说明Co~(2+)离子低掺杂下,该体系有着强的自旋–晶格耦合;(ii)在高Co~(2+)离子掺杂时,由于巡游性的增强,轨道序的弱化,JAB交换相互作用增强,体系也表现出明显的磁各向同性。因此磁相变温度向更高的温度移动,而结构相变温度向低温移动甚至消失。 相似文献
886.
使用第一性原理赝势方法及量子化学从头算方法计算的物理量以及最小二乘法拟合的数据构建了多元合金Fe-Cr-V-Ni-Si-C系的原子间互作用势,并利用该原子间互作用势计算了实验合金N5(Fe9.07Cr7.56V0.8Ni0.49 Mo0.96Mn1.52Si3.3C),N6(Fe9.65Cr7.72V1.17Ni0.50Mo0.91Mn1.42Si3.3C),N7(Fe9.81Cr7.65V1.58Ni0.46Mo0.86Mn1.35Si3.3C),N8(Fe10.05Cr7.59V2.24Ni0.40M
关键词:
F-S多体势
多元合金
第一性原理 相似文献
887.
Opeil CP Mihaila B Schulze RK Mañosa L Planes A Hults WL Fisher RA Riseborough PS Littlewood PB Smith JL Lashley JC 《Physical review letters》2008,100(16):165703
Ultraviolet-photoemission (UPS) measurements and supporting specific-heat, thermal-expansion, resistivity, and magnetic-moment measurements are reported for the magnetic shape-memory alloy Ni2MnGa over the temperature range 100T(PM) is due to the Ni d minority-spin electrons. Below T(M) this peak disappears, resulting in an enhanced density of states at energies around 0.8 eV. This enhancement reflects Ni d and Mn d electronic contributions to the majority-spin density of states. 相似文献
888.
S.C. Ma Y.X. ZhengH.C. Xuan L.J. ShenQ.Q. Cao D.H. Wang Z.C. ZhongY.W. Du 《Journal of magnetism and magnetic materials》2012,324(2):135-139
The magnetic and magnetocaloric properties have been investigated in a series of Mn1−xVxCoGe (x=0.01, 0.02, 0.03, and 0.05) alloys. The substitution of V for Mn reduces the structural transformation temperature of MnCoGe alloy effectively and results in a second-order magnetic transition in Mn0.95V0.05CoGe alloys. Large room temperature magnetocaloric effect and almost zero magnetic hysteresis losses are simultaneously achieved in the alloys with x=0.01, 0.02, and 0.03. The reasons for the negligible magnetic hysteresis losses and the potential application for the roomtemperature magnetic refrigeration are discussed. 相似文献
889.
Zubair Ahmad Tianyu Ma Shan TaoMi Yan 《Journal of magnetism and magnetic materials》2012,324(8):1534-1538
The Fe63B23Nd7Y3Nb3Cr1 nanocomposite magnets in the form of sheets have been prepared by copper mold casting technique. The phase evolution, crystal structure, microstructural and magnetic properties have been investigated in the as-cast and annealed states. The as-cast sheets show magnetically soft behaviors which become magnetically hard by thermal annealing. The optimal annealed microstructure was composed of nanosize soft magnetic α-Fe (19-29 nm) and hard magnetic Nd2Fe14B (45-55 nm) grains. The best hard magnetic properties such as intrinsic coercivity, jHc of 1119 kA/m, remanence, Br of 0.44 T, magnetic induction to saturation magnetization ratio, Mr/Ms=0.61 and maximum energy product, (BH)max of 55 kJ/m3 was obtained after annealing at 680 °C for 15 min. The annealing treatment above 680 °C results in non-ideal phase grains growth, which degrade the magnetic properties. 相似文献
890.
近红外光谱(NIRS)广泛应用于生产过程分析与监测,常需事先建立定量校正或定性判别模型,并需在生产条件变化后调整模型,使用较复杂。本文从相异度和相似度两个对立互补的角度,提出自适应移动窗口标准差法和过程光谱相似度法,并以此为基础建立一种针对生产过程的无需校正模型的简易光谱在线监测方法。论文以中药柱层析过程为例,对监测过程作NIRS自适应移动窗口标准差趋势图和过程光谱相似度趋势图,并通过HPLC离线分析所得的多指标成分含量变化趋势图进行对比验证,发现可用于工艺状况实时监测,指导收集起点、终点、溶液相变点的判断,表明论文提出的方法合理可行。该方法亦可用于紫外/可见、红外、拉曼、荧光等光谱及色谱、质谱等其他过程分析技术。 相似文献