非即变相位共轭反馈对半导体激光器动态特性的影响

从四波混频产生相位共轭的物理原因出发,定义了相位共轭镜（PCM）的响应时间．建立起非即变相位共轭反馈条件下半导体激光器的外腔模型。以响应时间及频率失调为参变量,对其分岔及噪声等动态行为进行数值分析。结果表明,不考虑噪声影响时,增加相位共轭镜响应时间会使混沌带出现的次数和范围得到较大的抑制,当响应时间增大到1．5ns时,混沌带消失,半导体激光器保持稳定的单周期状态;考虑噪声影响后,随若响应时间的相对强度噪声（RIN）可减小几dB甚至十几dB,产生突变需要的反馈量也增大一个数量级以上,且其频谱的峰值向高频方向移动;另外,由于共轭反馈引起的频率失调低于半导体激光器激射频率3个数量级以上．它只对分岔特性有影响．对相对强度噪声的影响几乎为零。     

不同基体刚性偶氮化合物光致光学各向异性及其唯象模拟

在不同刚性的聚合物基体聚甲基丙烯酸甲酯（PMMA）、聚乙烯咔唑（PVK）和聚苯乙烯（PS）薄膜基体中掺入相同质量分数（均为0．003）的分散红13（DRl3）偶氮染料。以线偏振连续Ar^＋激光（514nm）作为控制光,连续He-Ne激光（632．8nm）作为信号光考察了具有相同厚度的三种样品在相同控制光功率（15mW）下的光致双折射效应。实验发现刚性较大的聚乙烯咔唑基体样品的双折射效应最小,刚性最小的聚苯乙烯基体样品的双折射效应最大。在偶氮生色团光致异构的四能级模型基础上,建立一新的唯象的模型。在模型中引入描述聚合物基体刚性的参量s,通过数值计算描述了不同基体刚性参量s对偶氮生色团光致异构取向的影响。计算结果表明,基体的刚性越大,样品的光致双折射效应越小,定性地解释了实验现象。     

Novel miniature high power ring filter

The power handling capability of high temperature superconducting (HTS) filters is limited due to current concentration at the edges of the superconducting films. This problem can be overcome by using ring resonator, which employs the edge current free and reduces the current concentration. However, this kind of filter has large size. In order to reduce the cost and size and increase the power handling capability, in this paper a HTS photonic bandgap (PBG) structure filter is developed. The proposed pass band filter with PBG structure exhibits center frequency 12.23 GHz, steepness (about 35 dB/GHz), bandwidth (−3 dB bandwidth is 0.045 GHz), and low insertion loss (about −0.5 dB), and can handle input power up to 1 W (this value was limited by the measurement instrument used in the experiment). The size is reduced by 25%, insertion loss reduced by 37.5%, and steeper roll-off of the filter is also obtained compared with that in published literature.     

Piezoelectric PMN-PT fibre hydrophone for ultrasonic transducer calibration

A newly developed ceramic fibre hydrophone with an active element as small as 0.25 mm in diameter is described in this work. Lead magnesium niobate-lead titanate (PMN-PT) ceramic fibre with a nominal composition of 0.65Pb(Mg_1/3Nb_2/3)O₃-0.35PbTiO₃ was fabricated by an extrusion method. PMN-PT single crystals were ground to a powder form and then mixed with poly(acrylic) acid to form a homogenous slurry. The fibre was extruded by pressing the slurry through a spinneret and then sintering at 1250 °C for crystallization. The electrical characteristics of the PMN-PT fibre were evaluated by measuring the relative permittivity and the impedance spectrum. A piezoelectric PMN-PT fibre hydrophone was fabricated and its sensitivity, angular response, and spatial resolution were evaluated. The fibre hydrophone provides good spatial resolution, angular response and receiving sensitivity. PACS 43.58.+z; 77.84.Dy     

Electron capture rates for iron group nuclei at the surface of magnetar

Effects of an ultra-strong magnetic field on electron capture rates for 55Co are analyzed in the nuclear shell model and under the Landau energy levels quantized approximation in the ultra-strong magnetic field, and the electron capture rates on 10 abundant iron group nuclei at the surface of a magnetar are given. The results show that electron capture rates on 55Co are increased greatly in the ultra-strong magnetic field, by about 3 orders of magnitude generally. These conclusions play an important role in future study of the evolution of magnetars.     

22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究

利用计算机辅助设计技术数值仿真工具, 研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应, 系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响. 模拟结果表明, 掺杂地平面和量子效应对于单粒子瞬态效应影响很小, 重离子入射产生大量电荷, 屏蔽了初始电荷分布的差异性. 单粒子瞬态效应以及收集电荷和重离子入射位置强相关, 超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端. 当栅功函数从4.3 eV变化到4.65 eV时, 单粒子瞬态电流峰值从564 μA减小到509 μA, 收集电荷从4.57 fC减小到3.97 fC. 超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制, 但是收集电荷却与衬底偏置电压弱相关. 关键词： 超薄体全耗尽绝缘体上硅 单粒子瞬态效应 电荷收集 数值仿真     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

准周期激励与应变超晶格的动力学稳定性

假设超晶格锯齿形沟道对粒子的作用等效为形状相似的周期场作用. 在经典力学框架内,引入正弦平方势,把粒子运动方程化为具有阻尼项和双频激励项的摆方程. 用Melnikov方法对单频激励系统的分叉与混沌进行分析;用Lyapunov方法对双频激励系统的稳定性进行讨论. 结果表明：在弱非线性情况下,双频激励系统存在局域不稳定,且这种不稳定将向全局扩展,直至混沌的出现;导致混沌的双频激励强度远小于单频激励强度;外加一个适当的超声场可望将这种敏感钝化,使系统的稳定性得到改善. 关键词： 超晶格 准周期激励 混沌 稳定性     

An improved least square channel estimation algorithm for coherent optical OFDM system

This paper presents an improved processing added to conventional least square (LS) channel estimation to modify its performance for coherent optical orthogonal frequency division multiplexing (CO-OFDM) system. By testing selected limitation factors of the existing algorithms, the influence of our improved algorithm to the performance of CO-OFDM system were studied and compared with other published algorithms. The simulation results of the study demonstrated that the proposed approaches achieved better channel estimation performance and are considered as a more appropriate alternative for CO-OFDM system with the tradeoff between complexity and performance.     

Dielectric loss of half-doped manganite Lao.sCao.sMnO3＊

The dielectric loss tanfi of half-doped manganite Lao.sCao.sMnO3 is investigated using Green＇s function technique. The Lao.sCao.sMnO3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn- Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tans decreases with increasing [e]TI, V, and U. It is also observed that the transition temperature Tp rises as l eJTI and U increase. It is worth noting that Tp remains unchanged and the strength of tans increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.