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161.
A new method of image projection based on fractional Fourier transformation is presented. This method can project an image at any distance after a lens plane. We use a modified Gerschberg–Saxton (GS) iteration algorithm to compute a phase-only hologram. The amplitude distributions both on the hologram plane and image plane are restricted while allowing their phase distributions to drift into an optimum value. The quality of the image projected by fractional Fourier hologram is close to the image projected by Fourier hologram. The RMS error between the projected image and the constrained image is computed in our experiment. A comparison in flexibility of the two projection methods is also discussed. 相似文献
162.
Stress relief effect is believed to be the main reason why the porous structure films have high laser induced damage threshold. But there is little systematic theoretical investigation of this view. This essay adopts spherical coordinate model to calculate the temperature and stress distribution in the film and analyzes the local stress redistribution after phase transformation or crush happens. The influences of porosity and pore radius on stress redistribution have been studied. The results show that: for the case of only local crush occurrence, the changes of porosity and pore radius have little influence on the stress relief effect. For the films with low porosity, the formed thermal stress cannot be alleviated effectively. When local phase transformation happens, the permeation action of high pressure fluid can reduce the local high pressure in the phase transformation zone; on the other hand, it can make the high pressure fluid permeate to film's surface and cause surface tensile stress increase. The final effect is the competitive result of these two mechanisms. Overall, when the permeation action of phase transformation materials happens, the higher porosity or larger pore radius, the higher capability of films to resist laser damage. 相似文献
163.
In this paper, an improved novel joint channel estimation algorithm is proposed for the 112 Gbit/s PDM CO-OFDM system. This method combines the advantages of the intra-symbol frequency domain averaging (ISFA) method and the time domain averaging (TA) method, which can realize more accuracy channel estimation. Simulation results show that this proposal could promise a relatively stable performance even under a rapidly time varying environment. It significantly outperforms the ISFA method by 2.2 dB when the DGD equals 1000 ps, and has the advantages of 0.5 dB over ISFA in considering the laser linewidth and frequency offset. 相似文献
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针对以往语音增强算法在非平稳噪声环境下性能急剧下降的问题,基于时频字典学习方法提出了一种新的单通道语音增强算法。首先,提出采用时频字典学习方法对噪声的频谱结构的先验信息进行建模,并将其融入到卷积非负矩阵分解的框架下;然后,在固定噪声时频字典情况下,推导了时变增益和语音时频字典的乘性迭代求解公式;最后,利用该迭代公式更新语音和噪声的时变增益系数以及语音的时频字典,通过语音时频字典和时变增益的卷积运算重构出语音的幅度谱并用二值时频掩蔽方法消除噪声干扰。实验结果表明,在多项语音质量评价指标上,本文算法都取得了更好的结果。在非平稳噪声和低信噪比环境下,相比于多带谱减法和非负稀疏编码去噪算法,本文算法更有效地消除了噪声,增强后的语音具有更好的质量。 相似文献
166.
Xueqiang Zhang Yongqing Huang Xiaofeng Duan Xinye Fan Qi Wang Xia Zhang Bing Shen Wei Wang Xiaomin Ren 《Optics Communications》2012,285(21-22):4338-4343
To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system. 相似文献
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169.
Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor 下载免费PDF全文
This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit. 相似文献
170.
Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain(FDTD) method.Such a designed mask is capable of enhancing near field lithography(NFL) resolution more than three times compared with the structure without indentations.The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations.As a straightforward consequence,the channel-to-channel interspaces can be shortened significantly,maintaining a uniform field distribution and high contrast. 相似文献