Holographic image projection using fractional Fourier transformation

A new method of image projection based on fractional Fourier transformation is presented. This method can project an image at any distance after a lens plane. We use a modified Gerschberg–Saxton (GS) iteration algorithm to compute a phase-only hologram. The amplitude distributions both on the hologram plane and image plane are restricted while allowing their phase distributions to drift into an optimum value. The quality of the image projected by fractional Fourier hologram is close to the image projected by Fourier hologram. The RMS error between the projected image and the constrained image is computed in our experiment. A comparison in flexibility of the two projection methods is also discussed.     

The stress relief mechanism in laser irradiating on porous films

Stress relief effect is believed to be the main reason why the porous structure films have high laser induced damage threshold. But there is little systematic theoretical investigation of this view. This essay adopts spherical coordinate model to calculate the temperature and stress distribution in the film and analyzes the local stress redistribution after phase transformation or crush happens. The influences of porosity and pore radius on stress redistribution have been studied. The results show that: for the case of only local crush occurrence, the changes of porosity and pore radius have little influence on the stress relief effect. For the films with low porosity, the formed thermal stress cannot be alleviated effectively. When local phase transformation happens, the permeation action of high pressure fluid can reduce the local high pressure in the phase transformation zone; on the other hand, it can make the high pressure fluid permeate to film's surface and cause surface tensile stress increase. The final effect is the competitive result of these two mechanisms. Overall, when the permeation action of phase transformation materials happens, the higher porosity or larger pore radius, the higher capability of films to resist laser damage.     

An improved novel joint channel estimation algorithm for the 112 Gbit/s PDM CO-OFDM system

In this paper, an improved novel joint channel estimation algorithm is proposed for the 112 Gbit/s PDM CO-OFDM system. This method combines the advantages of the intra-symbol frequency domain averaging (ISFA) method and the time domain averaging (TA) method, which can realize more accuracy channel estimation. Simulation results show that this proposal could promise a relatively stable performance even under a rapidly time varying environment. It significantly outperforms the ISFA method by 2.2 dB when the DGD equals 1000 ps, and has the advantages of 0.5 dB over ISFA in considering the laser linewidth and frequency offset.     

时频字典学习的单通道语音增强算法

针对以往语音增强算法在非平稳噪声环境下性能急剧下降的问题,基于时频字典学习方法提出了一种新的单通道语音增强算法。首先,提出采用时频字典学习方法对噪声的频谱结构的先验信息进行建模,并将其融入到卷积非负矩阵分解的框架下;然后,在固定噪声时频字典情况下,推导了时变增益和语音时频字典的乘性迭代求解公式;最后,利用该迭代公式更新语音和噪声的时变增益系数以及语音的时频字典,通过语音时频字典和时变增益的卷积运算重构出语音的幅度谱并用二值时频掩蔽方法消除噪声干扰。实验结果表明,在多项语音质量评价指标上,本文算法都取得了更好的结果。在非平稳噪声和低信噪比环境下,相比于多带谱减法和非负稀疏编码去噪算法,本文算法更有效地消除了噪声,增强后的语音具有更好的质量。     

A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.     

亚微秒脉冲下高梯度绝缘子的沿面闪络特性

介绍了一种由聚酰亚胺和不锈钢叠加而成的高梯度绝缘子的实验研究工作。该绝缘子样品的直径60 mm,厚度8 mm,在脉冲宽度120 ns(FWHM)的电压脉冲加载下最高获得了接近13 MV/m的绝缘强度。研究了测试方法以及绝缘层厚度与金属层厚度的比例对高梯度绝缘子绝缘强度的影响,并与相同尺寸的普通材料绝缘子的绝缘强度进行了对比。结果表明,高梯度绝缘子的绝缘强度明显高于仅由聚酰亚胺构成的普通绝缘子。     

微腔等离子体放电过程的数值研究

采用2维自洽完全流体模型,数值研究了阳极为通孔的高气压微腔放电结构中等离子体参数的变化过程。模拟结果获得了当氩气压强为13.3 kPa时,放电中的电势分布、等离子体密度分布、径向电场分布和电子温度分布等重要参数的演化过程。模拟结果表明在放电过程中,阴极附近的电场由轴向电场逐步转变为径向电场,等离子体密度最大值位于放电腔中间处,并随时间推移由阳极附近向阴极附近移动,电子温度的最大值出现在阴极环形鞘层区域。     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.     

Improving lithographic masks with the assistance of indentations

Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain(FDTD) method.Such a designed mask is capable of enhancing near field lithography(NFL) resolution more than three times compared with the structure without indentations.The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations.As a straightforward consequence,the channel-to-channel interspaces can be shortened significantly,maintaining a uniform field distribution and high contrast.