Analysis of absorption performances of anechoic layers with steel plate backing

Rubber layers with air-filled cavities or local resonance scatters can be used as anechoic coatings. A lot of researches have focused on the absorption mechanism of the anechoic coatings. As the anechoic coatings are bonded to the hull of submarine, the vibration of the hull should not be neglected when the analysis of the absorption characters is carried out. Therefore, it is more reasonable to treat the anechoic coating and the backing as a whole when the acoustic performance is analyzed. Considering the effects of the steel plate backing, the sound absorption performances on different models of anechoic coatings are investigated in this paper. The Finite Element Method is used to illustrate the vibrational behaviors of the anechoic coatings under the steel backings by which the displacement contours is obtained for analysis. The theoretical results show that an absorption peak is induced by the resonance of the steel slab and rubber layer. At the frequency of this absorption peak, the steel plate and the coating vibrates longitudinally like a mass-spring system in which the steel slab serves for mass and the coating layer is the spring. To illuminate the effects of the steel slab backing on the acoustic absorption, the thicknesses of the steel slab and the anechoic layer are discussed. Finally, an experiment is performed and the results show a good agreement with the theoretical analysis.     

Temperature-dependent photoluminescence of CuInS2 quantum dots

Temperature-dependent photoluminescence (PL) spectroscopy of CuInS₂ core and CuInS₂/ZnS core–shell quantum dots (QDs) was studied for understanding the influence of a ZnS shell on the PL mechanism. The PL quantum yield and lifetime of CuInS₂ core QDs were significantly enhanced after the QD surface was coated with the ZnS shell. The temperature dependences of the PL energy, linewidth, and intensity for the core and core–shell QDs were studied in the temperature range from 92 to 287 K. The temperature-dependent shifts of 98 meV and 35 meV for the PL energies of the QDs were much larger than those of the excitons in their bulk semiconductors. It was surprisingly found that the core and core–shell QDs exhibited a similar temperature dependence of the PL intensity. The PL in the CuInS₂/ZnS core–shell QDs was suggested to originate from recombination of many kinds of defect-related emission centers in the interior of the cores.     

Optimization of locally resonant acoustic metamaterials on underwater sound absorption characteristics

The study of acoustic metamaterials, also known as locally resonant sonic materials, has recently focused on the topic of underwater sound absorption. The high absorption occurs only within a narrow frequency band around the locally resonant frequency. Nevertheless, this problem can be addressed through a combination of several acoustic metamaterial layers that have different resonant frequencies. In this paper, an optimization scheme, a genetic and a general nonlinear constrained algorithm, is utilized to enhance the low-frequency underwater sound absorption of an acoustic metamaterial slab with several layers. Both the physical and structural parameters of the acoustic metamaterial slab are optimized to enlarge the absorption band. In addition, the sound absorption mechanism of the acoustic metamaterial slab is also analyzed. The result shows that each layer is found to oscillate as a nearly independent unit at its corresponding resonant frequency. The theoretical and experimental results both demonstrate that the optimized metamaterial slab can achieve a broadband (800–2500 Hz) absorption of underwater sound, which is a helpful guidance on the design of anechoic coatings.     

The QE numerical simulation of PEA semiconductor photocathode

Several kinds of models have already been proposed to explain the photoemission process. The exact photoemission theory of the semiconductor photocathode was not well established after decades of research. In this paper an integral equation of quantum efficiency (QE) is constructed to describe the photoemission of positive electron affinity (PEA) of the semiconductor photocathode based on the three-step photoemission model. Various factors (e.g., forbidden band gap, electron affinity, photon energy, incident angle, degree of polarization, refractive index, extinction coefficient, initial and final electron energy, relaxation time, external electric field and so on) have an impact on the QE of the PEA semiconductor photocathode, which are entirely expressed in the QE equation. In addition, a simulation code is also programmed to calculate the QE of the K₂CsSb photocathode theoretically at 532 nm wavelength. By and large, the result is in line with the expected experimental value. The reasons leading to the distinction between the experimental and theoretical QE are discussed.     

反透析法测定阿奇霉素囊泡的包封率

建立阿奇霉素囊泡的包封率测定方法.以紫外分光光度法为分析手段,采用反透析法测定阿奇霉素囊泡的包封率.反透析法透析平衡时间为8h,游离药物的绝对回收率符合要求.该方法测得自制阿奇霉素囊泡的平均包封率为92.51％±0.56％,10h内没有渗漏,方法重现性好.该法操作准确、简便,可用于测定阿奇霉素囊泡的包封率.     

油水两相流水包油流型多尺度排列熵分析

采用多尺度排列熵算法研究了垂直油水两相流水包油流型的多尺度动力学特性.首先,在内径为20 mm的垂直管道内采集了油水两相流水包油流型电导传感器波动信号,然后计算了不同流动工况下电导波动信号的多尺度排列熵值.研究发现多尺度排列熵率与均值可定量刻画水包油流型动力学复杂性;此外,提出了通过增量时间序列累积量与多尺度排列熵率联合分布识别三种不同水包油流型的新途径.     

Stimulated Brillouin scattering-induced phase noise in an interferometric fiber sensing system

Stimulated Brillouin scattering-induced phase noise is harmful to interferometric fiber sensing systems.The localized fluctuating model is used to study the intensity noise caused by the stimulated Brillouin scattering in a single-mode fiber.The phase noise structure is analyzed for an interferometric fiber sensing system,and an unbalanced Michelson interferometer with an optical path difference of 1 m,as well as the phase-generated carrier technique,is used to measure the phase noise.It is found that the phase noise is small when the input power is below the stimulated Brillouin scattering threshold,increases dramatically at first and then gradually becomes flat when the input power is above the threshold,which is similar to the variation in relative intensity noise.It can be inferred that the increase in phase noise is mainly due to the broadening of the laser linewidth caused by stimulated Brillouin scattering,which is verified through linewidth measurements in the absence and presence of the stimulated Brillouin scattering.     

真空中聚苯乙烯交联材料的沿面闪络特性

搭建了真空沿面闪络实验平台,在实验平台上对聚苯乙烯交联材料进行了真空沿面闪络性能测试,探讨了材料的真空沿面闪络电压强度与材料结构、材料内部微量杂质的关系。实验结果表明:随着聚苯乙烯材料交联程度的增加,其真空沿面闪络电压强度先增加后减少;聚苯乙烯交联材料分子链结构对其真空沿面闪络电压强度有重要影响;材料的真空沿面闪络电压强度还与交联材料内部异质分子数量有关系,微量异质结构的分子将导致沿面闪络电压强度的下降。     

A New Rhodamine-Based “Off-On” Fluorescent Chemosensor for Hg (II) Ion and its Application in Imaging Hg (II) in Living Cells

A novel rhodamine derivative (Rh-C), synthesized by the reaction of rhodamine ethylenediamine and cinnamoyl chloride, was evaluated as a chemoselective Hg(2+) ion sensor. Addition of Hg(2+) to an ethanol aqueous solution of the Rh-C resulted in a color change from colorless to obvious pink color together with distinctive changes in UV-vis absorption spectrum and fluorescence spectrum. However, other common alkali-, alkaline earth-, transition- and rare earth metal ions induced no or minimal spectral changes. The interaction of Hg(2+) and sensor Rh-C was proven to adopt a 1:1 binding stoichiometry and the recognition process is reversible. The chemosensor displayed a linear response to Hg(2+) in the range of 0.4-5?μM with a detection limit of 7.4?×?10(-8)?M. The sensor Rh-C was also successfully applied to the imaging of Hg(2+) in HL-7702 cells.     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.