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291.
The authors present the results of DC vacuum arc lifetime and voltage measurements for contacts with different surface microstructures. This was realized by treating the contact surface with emery paper of varying roughness. The contact surface microstructure was found to have a large effect on the DC arc lifetime (several tens of times difference at the most) and arc voltage (30% difference at the most). The mechanism of the surface microstructure effect on DC arc stability was analyzed and is explained preliminarily. The rougher the contact surface is, the longer the arc lifetime and the more stable. The arc itself has a tendency to condition the surface in a way that is unfavorable for a sustained arc lifetime. The crater size for a rough surface is smaller than for a smooth one. The rougher the contact is, the lower the arc voltage (both DC and HF components). The arc erosion has a tendency to increase the arc voltage. It is probable that type I cathode spots (fast motion, small crater size) correspond not only to the surface contamination, but also to the surface roughness  相似文献   
292.
软X射线激光偏折法测量激光等离子体电子密度分布   总被引:3,自引:1,他引:3       下载免费PDF全文
利用脉宽约为50ps的类镍银139nm软X射线激光作为探针,探测由脉宽80ps的驱动激光打C8H8靶产生的等离子体在1ns后的电子密度分布信息,获得了清晰的莫尔条纹图像.对结果的处理,给出了峰值电子密度为11×1021cm-3,并对在靶面附近莫尔条纹的消失现象作了初步解释 关键词: 软X射线激光探针 莫尔条纹 等离子体电子密度  相似文献   
293.
This paper presented an ultrasound line-by-line scanning method of spatial–temporal active cavitation mapping applicable in a liquid or liquid filled tissue cavities exposed by high-intensity focused ultrasound (HIFU). Scattered signals from cavitation bubbles were obtained in a scan line immediately after one HIFU exposure, and then there was a waiting time of 2 s long enough to make the liquid back to the original state. As this pattern extended, an image was built up by sequentially measuring a series of such lines. The acquisition of the beamformed radiofrequency (RF) signals for a scan line was synchronized with HIFU exposure. The duration of HIFU exposure, as well as the delay of the interrogating pulse relative to the moment while HIFU was turned off, could vary from microseconds to seconds. The feasibility of this method was demonstrated in tap-water and a tap-water filled cavity in the tissue-mimicking gelatin–agar phantom as capable of observing temporal evolutions of cavitation bubble cloud with temporal resolution of several microseconds, lateral and axial resolution of 0.50 mm and 0.29 mm respectively. The dissolution process of cavitation bubble cloud and spatial distribution affected by cavitation previously generated were also investigated. Although the application is limited by the requirement for a gassy fluid (e.g. tap water, etc.) that allows replenishment of nuclei between HIFU exposures, the technique may be a useful tool in spatial–temporal cavitation mapping for HIFU with high precision and resolution, providing a reference for clinical therapy.  相似文献   
294.
Nanocrystalline ZnO films with both C-axis vertical grown and inclined angled grown were sputter-deposited onto aluminium foils (50 μm thick) and characterised for using as flexible ultrasonic transducers. As-deposited C-axis grown ZnO films were annealed at different temperatures up to 600 °C to enhance film crystallinity and reduce film stress. The C-axis grown ZnO film on the Al foil were bonded onto steel plates, and the pulse-echo tests verified a good performance (with dominant longitudinal waves) of the ultrasonic transducers made from both as-deposited and post-annealed films. Inclined angled ZnO films on the Al foil glued onto steel plates generated mixed shear and longitudinal waves in the pulse-echo test.  相似文献   
295.
对SiO2和ZnS这两种常用的红外光学材料在红外短脉冲激光辐照下的热损伤特性进行了研究,分析了相同激光辐照条件下两种材料的热效应,另外也针对同种材料不同辐照条件下的热效应进行比较。分析结果表明:红外激光作用下,SiO2材料的表面温升快于ZnS材料,而在材料内部,则后者快于前者。脉冲辐照结束时SiO2材料的表面峰值温度高于ZnS材料,但ZnS材料产生温升的深度大于SiO2材料。由于能量更为集中,材料在皮秒激光作用下温升高于纳秒激光作用下的温升。若材料的峰值温度达到熔点,则激光的单脉冲能量随脉冲宽度的减小呈非线性减小趋势,且变化率越来越大。  相似文献   
296.
换热器广泛应用于建筑工程领域及工业过程中,其出口介质温度的有效控制是保证质量、节能和安全生产的重要条件,因此换热器出口水温的控制是过程控制中的重要课题。本文以西门子SMPT1000换热器温度控制系统为研究对象,建立基于虚拟仪器的智能温度控制平台。该平台在实现传统PID控制的基础上,又增加了智能控制算法,斯密斯控制和模糊控制。实验证明该智能控制平台具有修改参数简易方便、曲线准确的优点,具有良好的动静态特性,且市场应用价值高。  相似文献   
297.
In this paper, a circular polarized electronically-controlled scanning microstrip antenna array is designed, which is based on composite right left-handed transmission line (CRLH TL) and is realized by varactor diodes. Proposed electronically-controlled antenna arrays till now are always linear-polarized as the axial ratio (AR) may be spoiled by the DC feed line, especially in the CRLH TL based case. A more separated CRLH TL integrated with active lumped elements is utilized to solve the problem. The antenna array is composed of the CRLH microstrip transmission line structure and circular polarized microstrip antenna. The direction of the main lobe varies from ?1° to ?20 ° by continuously modifying the varactor diodes bias voltages from 0 to 20 V with 5 V as a step. The AR remains below 3 dB in the scanning range. The simulation and experimental results show a good consistence.  相似文献   
298.
付洋洋  罗海云  邹晓兵  王强  王新新 《物理学报》2014,63(9):95206-095206
建立了棒-板电极下氩气直流放电的流体模型,利用有限元法对几何位形相似的两个气隙放电过程进行了数值求解.两放电气隙外加电压相同,气隙线性尺寸的比值为10:1,气压分别为1 Torr和10 Torr.仿真得到了两相似气隙的放电的伏安特性曲线以及放电物理量(如电位、电场、电子密度、离子密度、电子温度等)的空间分布.根据气体放电相似性的基本结论,检验了气隙对应物理量之间的数值关系.结果表明:两相似气隙的放电类型为正常辉光放电,对应放电物理量之间存在相似性理论指出的比例关系,且在相同幅值的直流电压作用下,气隙放电的工作点相同.这将为利用气体放电相似性来外推相似气隙的放电特性提供一定的理论依据.  相似文献   
299.
The grating fringe on the reference plane is broadened in the intersecting axis system because of oblique-angle projection. In order to solve this problem, we study the theoretical model of the temporal phase unwrapping method based on the fringe cycle correction. We also study the 3D shape measurement theoretical model of the larger complex objects after considering the coordinate deviation and lens distortion. Experimental results demonstrate that the fringe cycle on the reference plane can be corrected to a constant value, the lens distortion can be corrected, and 3D shape of larger complex objects can be accurately measured.  相似文献   
300.
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.  相似文献   
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