水雾红外隐身的冷/热目标效应

人工水雾对抗红外成像制导导弹时,会因为蒸发对流强、辐射热流弱而使水雾形成冷目标;也可能因为辐射热流过强、散热弱而形成热目标。为详细揭示该现象,以Mie理论为基础,通过辐射传递方程和能量守恒方程的耦合计算,建立了水雾红外隐身产生冷目标或热目标效应的数学模型。应用蒙特卡洛法与本文算法作对比,验证了模型的正确性;将水雾视为吸收、发射、各向异性散射介质,考虑水雾自身辐射、多重散射和各种换热过程,比如辐射热流、两相流的热传导、热对流、紊流热扩散以及雾滴蒸发等,反映了水雾热遮蔽所产生的冷/热目标效应。     

Mathematical model for characterizing noise transmission into finite cylindrical structures

This work presents a theoretical study of the sound transmission into a finite cylinder under coupled structural and acoustic vibration. Particular attention of this study is focused on evaluating a dimensionless quantity, "noise reduction," for characterizing noise transmission into a small cylindrical enclosure. An analytical expression of the exterior sound pressure resulting from an oblique plane wave impinging upon the cylindrical shell is first presented, which is approximated from the exterior sound pressure for an infinite cylindrical structure. Next, the analytical solution of the interior sound pressure is computed using modal-interaction theory for the coupled structural acoustic system. These results are then used to derive the analytical formula for the noise reduction. Finally, the model is used to predict and characterize the sound transmission into a ChamberCore cylindrical structure, and the results are compared with experimental data. The effects of incidence angle and internal acoustic damping on the sound transmission into the cylinder are also parametrically studied.     

Preliminary Study on Applications of an Atmospheric-Pressure Argon Plasma Discharge With a Single-Electrode Configuration

An atmospheric-pressure (AP) argon plasma discharge generated in a single-electrode configuration with the power supply operating at a frequency of 45 kHz is employed to perform some applications, such as the treatment of the interior surface of a medical infusion tube, hydrophilic modification of insulator surface, hardening of metal surface, and acidification treatment of water. It is shown that the active gases ( $hbox{O}_{2}$ and $hbox{N}_{2}$) mixed in a carrier gas (Ar) play a significant role in carrying out such applications. A preliminary study on its applications is presented to demonstrate the promising potential of AP single-electrode-configuration plasma jet.      

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

HFSiS构型及其稳定性的理论研究

利用密度泛函理论对三线态HFSiS分子结构及其稳定性进行了详细的理论研究.在B3LYP/6-311G**水平上计算出了各驻点的优化构型、振动频率,并对各个振动模式加以归属,在同样的理论水平上进行了IRC计算;CCSD(T)结合6-311G**基组对于驻点进行单点能及相对能量的计算;根据振动模式分析来阐明三线态势能面上各驻点之间的变化,并与单线态势能面进行比较.计算结果表明,三线态HFSiS分子存在6种异构体,3HFSiS结构在动力学和热力学上都是最稳定的,实验上应该可以观测到;在两组键旋转异构体当中,结构-2具有一定的动力学稳定性,而结构-1动力学稳定性较差;3SiSHF在动力学上和热力学上都是最不稳定的结构.     

The pressure-induced phase transition of the solid β–HMX

The structural, vibrational and thermodynamic properties of β-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (β–HMX) crystal have been studied using the isothermal-isobaric molecular dynamics (NPT-MD) simulations. The variations of cell volume, lattice constants and molecular geometry of solid β–HMX are presented and discussed at different pressure and temperature. It was found that the N–N bond is significantly lengthened with increasing temperature, which suggests that it is relevant to the initial decomposition. An abrupt change at 27 Gpa for the volume and internal geometrical parameters was observed. This is in good accord with the experimental observation that there is a phase transition at 27 GPa, which is clearly due to conformational change, not chemical reaction. The vibrational frequencies at ambient conditions agree well with experimental results, and the pressure/temperature-induced frequency shifts of these modes are discussed. Frequency discontinuity was also observed at pressure when the phase transition occurred. The Grüneisen parameter was obtained using the vibrational frequency.     

Topological aspect of Chern--Simons p-branes

By generalizing the topological current of Abelian Chern--Simons (CS) vortices, we present a topological tensor current of CS p-branes based on the \phi -mapping topological current theory. It is revealed that CS p-branes are located at the isolated zeros of the vector field \phi(x), and the topological structure of CS p-branes is characterized by the winding number of the \phi-mappings. Furthermore, the Nambu--Goto action and the equation of motion for multi CS p-branes are obtained.     

微射流阵列冲击恒热流壁面换热数值模拟

微射流冲击作为一种高热流冷却技术,在大功率激光器、微电子芯片等微型高热流器件冷却方面有广阔应用前景.本文对微射流阵列冲击恒热流表面的换热情况进行数值模拟,详细分析了微射流阵列的换热特点,对比了射流孔顺排和叉排方式的冷却性能,得出射流入口雷诺数、射流孔间距、射流高度等因素对冷却特性的影响规律.     

Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems

When arsenides are grown by molecular beam epitaxy at low substrate temperatures, as much as 2% excess arsenic can be incorporated into the epilayer. This excess arsenic is in the form of antisites, but there is also a substantial concentration of gallium vacancies. With anneal, there is a significant decrease in the arsenic antisite and gallium vancancy concentrations as the excess arsenic precipitates. With further anneal, the arsenic precipitates coarsen. This combination of low substrate temperature molecular beam epitaxy and a subsequent anneal results in a broad spectrum of materials, from highly defected epilayers to a two-phase system of semimetallic arsenic precipitates in an arsenide semiconductor matrix. These materials exhibit some very interesting and useful electrical and optical properties.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.