6H-SiC衬底上AlGaN基垂直结构紫外LED的制备

利用金属有机物化学气相沉积方法,在n型6H-SiC衬底上制备了15对Si掺杂Al_(0.19)Ga_(0.81)N/Al_(0.37)Ga_(0.63)N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。     

用于储罐底板缺陷检测的超声兰姆波模式研究

从超声兰姆波的声场方程出发,得到板材表面离面位移(法向位移)为零的条件,即当超声兰姆波的相速度等于板材介质的纵波声速时,在板材表面的离面位移为零。在给定适当频厚积的条件下,分别数值模拟了仅有切向位移而无离面位移的A1、S1、A2和S2兰姆波模式在有液体负载的单层钢板中的传播情形。结果表明:离面位移为零的S2模式频散较小且对板中缺陷更为敏感。     

等离子体喷涂层的正电子湮没研究

本文用正电子湮没技术对等离子体喷涂铜基合金压缩形变的微观缺陷进行了测量。对等离子体喷涂合金，随着压缩量的增加，正电子寿命变短，这一现象与常规合金中观察到的情况相反。     

固态富马酸单乙酯在变温1H MAS与CRAMPS研究

富马酸单乙酯(FAME)的单脉冲¹H MAS谱由-高分辨成分与-宽线谱成分组成.高分辨成分可由Hahn回波脉冲序列单独获得.文中通过变温¹H MAS与CRAMPS实验对两组分的性质进行了系统的研究.发现当温度趋于样品的熔点时,其¹H CRAMPS谱可观察到化学位移明显区别的两套谱,它们分别对应于¹H MAS谱的高分辨与宽线组分.实验表明:高分辨成分来自FAME样品的-塑性相,而宽线组分来自通常的刚性相.文中所给出的实验事实充分说明¹H MAS与CRAMPS技术是研究有机塑性固体的强有力的工具.     

Ca2Li2BiV3O12∶Eu3+荧光粉的制备和发光性能

采用高温固相法成功合成了一种可用于白光LED的Ca₂Li₂BiV₃O₁₂∶Eu³⁺新型红色荧光粉,使用X射线衍射仪和荧光分光光度计对合成样品进行了表征,研究了合成温度和Eu³⁺含量对合成样品相组成和发光性能的影响。结果表明,采用高温固相法在650~700 ℃能合成纯度较高、结晶度好的Ca₂Li₂BiV₃O₁₂∶Eu³⁺荧光粉,合成样品激发带覆盖200~400 nm,发射光谱的线状发射峰可归属于Eu³⁺的⁵D₀→⁷F_J(J= 1, 2, 3,4)特征锐线发射,Eu³⁺摩尔分数为14%时荧光粉的发光强度最大。     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

强非线性吸收下高斯光束Z-扫描衍射理论模型

 摘要：在同时考虑非线性折射和非线性吸收的情况下，借助光的衍射理论，研究了Z-扫描技术的衍射理论模型，分析了非线性折射和非线性吸收同时存在时Z-扫描曲线的形状特征和变化规律。数值计算表明，非线性吸收相移和非线性折射相移的比值是影响接收小孔输出光功率的重要因素。要想得到好的光限幅效果，应选取非线性相移比值远小于1或远大于2的非线性材料。     

贷款分配方法的数学模型及其解法

为了解决三角债问题，银行给出一笔贷款，应该如何分配这笔贷款，使清理的债务达到最大。本文建立这个问题的数学模型，并且给出一个解法。     

Yb：YAG晶体中的荧光浓度猝灭现象

在Ｙｂ：ＹＡＧ晶体中发现浓度猝灭现象,对猝灭机制进行了分析研究,指出退火前晶体的荧光浓度猝灭现象主要由Ｙｂ＾２＋、色心和由此产生的晶格畸变所致高掺杂浓度时痕量稀土杂质离子的存在也将导致浓度猝灭,确定了Ｙｂ：ＹＡＧ晶体中Ｙｂ＾３＋的理想掺杂浓度。