等离子体喷涂层的正电子湮没研究

本文用正电子湮没技术对等离子体喷涂铜基合金压缩形变的微观缺陷进行了测量。对等离子体喷涂合金，随着压缩量的增加，正电子寿命变短，这一现象与常规合金中观察到的情况相反。     

固态富马酸单乙酯在变温1H MAS与CRAMPS研究

富马酸单乙酯(FAME)的单脉冲¹H MAS谱由-高分辨成分与-宽线谱成分组成.高分辨成分可由Hahn回波脉冲序列单独获得.文中通过变温¹H MAS与CRAMPS实验对两组分的性质进行了系统的研究.发现当温度趋于样品的熔点时,其¹H CRAMPS谱可观察到化学位移明显区别的两套谱,它们分别对应于¹H MAS谱的高分辨与宽线组分.实验表明:高分辨成分来自FAME样品的-塑性相,而宽线组分来自通常的刚性相.文中所给出的实验事实充分说明¹H MAS与CRAMPS技术是研究有机塑性固体的强有力的工具.     

Ca2Li2BiV3O12∶Eu3+荧光粉的制备和发光性能

采用高温固相法成功合成了一种可用于白光LED的Ca₂Li₂BiV₃O₁₂∶Eu³⁺新型红色荧光粉,使用X射线衍射仪和荧光分光光度计对合成样品进行了表征,研究了合成温度和Eu³⁺含量对合成样品相组成和发光性能的影响。结果表明,采用高温固相法在650~700 ℃能合成纯度较高、结晶度好的Ca₂Li₂BiV₃O₁₂∶Eu³⁺荧光粉,合成样品激发带覆盖200~400 nm,发射光谱的线状发射峰可归属于Eu³⁺的⁵D₀→⁷F_J(J= 1, 2, 3,4)特征锐线发射,Eu³⁺摩尔分数为14%时荧光粉的发光强度最大。     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

强非线性吸收下高斯光束Z-扫描衍射理论模型

 摘要：在同时考虑非线性折射和非线性吸收的情况下，借助光的衍射理论，研究了Z-扫描技术的衍射理论模型，分析了非线性折射和非线性吸收同时存在时Z-扫描曲线的形状特征和变化规律。数值计算表明，非线性吸收相移和非线性折射相移的比值是影响接收小孔输出光功率的重要因素。要想得到好的光限幅效果，应选取非线性相移比值远小于1或远大于2的非线性材料。     

贷款分配方法的数学模型及其解法

为了解决三角债问题，银行给出一笔贷款，应该如何分配这笔贷款，使清理的债务达到最大。本文建立这个问题的数学模型，并且给出一个解法。     

Yb：YAG晶体中的荧光浓度猝灭现象

在Ｙｂ：ＹＡＧ晶体中发现浓度猝灭现象,对猝灭机制进行了分析研究,指出退火前晶体的荧光浓度猝灭现象主要由Ｙｂ＾２＋、色心和由此产生的晶格畸变所致高掺杂浓度时痕量稀土杂质离子的存在也将导致浓度猝灭,确定了Ｙｂ：ＹＡＧ晶体中Ｙｂ＾３＋的理想掺杂浓度。     

200GeV/u的~(238)U+~(238)U核碰撞产生的双轻子谱(M≤4GeV/c~2)的计算

在夸克味动力学的计算中,除包含ｕ、ｄ、ｓ夸克及其反夸克外,还涉及粲夸克及其反夸克（ｃｃ）,采用包含夸克味动力学效应的相对论性流体力学模型,计算了碰撞能量为２００ＧｅＶ／ｕ的２３８Ｕ＋２３８Ｕ核碰撞时形成的膨胀ＱＧＰ及其在相变过程中发射的双轻子谱,轻子对的质量范围Ｍ≤４ＧｅＶ／ｃ２．计算结果与ＣＥＲＮＳＰＳ的实验测量数据进行了定性的比较和分析,得到初步的结论：由于夸克碎块和味动力学效应,Ｊ／ψ→μ＋＋μ－峰值被降低,导致低质量区（阈至１．３５ＧｅＶ／ｃ２）谱的提高．     

FEB-E动态气靶偏滤器的研究

在ＦＥＢ－Ｅ设计阶段,偏波器从开放式固定板靶优化为封闭式气体靶,以改善偏滤器的杂质控制和增加离子与气体的相互作用,通过喷气和注入杂质获得的部分脱靶等离子体形成了动态气体靶,喷气能降低删削层（ＳＯＬ）处等离子体温度,沪入的杂质增加了ＳＯＬ处的辐射功率,使靶板的负载降低,用ＮＥＷＴ１Ｄ编码模拟了ＳＯＬ处等离子体和杂质（硼杂质）的输运,得到了杂质、等离本温度和等离了体密度分布。着眼于杂质的滞留物辐射,优