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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model 下载免费PDF全文
In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm~2 SiGe HBT over a wide temperature range(from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range. 相似文献
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The process e+e-→J/ψ+X with the center-of-mass(CM)energy in the range from 3.7 to 10.6 GeV is calculated up to the next-to-leading order(NLO)in quantum chromodynamics(QCD).At 10.6 GeV,the result is consistent with the experimental result from Belle.However,the predictions are much smaller than the background in the measurements at BESIII in the low CM energy range from 3.7 to 4.6 GeV.This indicates that the convergence of the QCD perturbative expansion becomes worse as the CM energy is closer to the inclusive J/ψ production threshold.For a further study of the QCD mechanism of J/ψ production in e~+e~-collisions with different CM energies,the initial state radiation effect of e~+e~-→J/ψ +gg and e~+e~-→J/ψ+cc are calculated in QCD NLO.The results are plotted and the number of events for different CM energy bins are provided for SuperKEKB.This provides a method to precisely test the validity of perturbative predictions for J/ψ production in future measurements. 相似文献
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