高压中温准稳态绝热量热计

本量热计利用准稳态原理设计而成,主要用于测定含油地层岩样的真比热,测试范围0.1—9.0MPa、室温≈550K,绝热控制精度<±0.5％,标准样品纯铜和石英玻璃的测定值与TPRC的常压值偏差约±1％。仪器具有测试快速、换样方便、自动控温,结果直接打印和精度较高等优点。     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal\ben oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel low-density metal-oxide semiconductor (LDMOS). Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer, 50-μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.     

Neutron Spectroscopic Factors of ^7Li and Astrophysical ^6Li（n,γ）^7Li Reaction Rates

Angular distributions of the ^7Li（^6Li, ^6Li）^7Li elastic scattering and the ^7Li（^6Li, ^7Lig.s.）^6Li, ^7Li（^6Li, ^7Li0.48）^6Li transfer reactions at Ec.m. = 23.7 MeV are measured with the Q3D magnetic spectrograph. The optical potential of ^6Li ＋ ^7Li is obtained by fitting the elastic scattering differential cross sections. Based on the distorted wave Born approximation （DWBA） analysis, spectroscopic factors of ^7Li =^6Li n are determined to be 0.73 ± 0.05 and 0.90 ± 0.09 for the ground and first exited states in ^7Li, respectively. Using the spectroscopic factors, the cross sections of the ^6 Li（n, γ0,1）^7 Li direct neutron capture reactions and the astrophysical ^6Li（n, γ）^7 Li reaction rates are derived.     

Magnetic properties and in compound magnetocaloric effect PrFe12B6

Magnetic properties and magnetocaloric effect of compound PrFe12B6 are investigated. The coexistence of hard phase PrFe12B6 and soft phase α-Fe causes interesting phenomena on the curves for the temperature dependence of magnetization. PrFe12B6 experiences a first order phase transition at the Curie temperature 206 K, accompanied by an obvious lattice contraction, which in turn results in a large magnetic entropy change. The Maxwell relation fails to give the correct information about magnetic entropy change due to the first order phase transition nature. The large magnetic entropy changes of PrFe12.3B4.7 obtained from heat capacity method are 11.7 and 16.2 J/kg.K for magnetic field changes of 0-2 T and 0-5 T respectively.     

Preparation and Characterization of Polypyrrole Microbelt via Cotton Template

脱脂棉作为模板首次合成了聚吡咯微带. 聚吡咯微带的结构通过红外进行表征,微带的稳定性、形貌和电性能通过扫描电子显微镜、热重分析仪和四探针电导率仪进行检测. 提出了聚吡咯微带的形成机理,并且结合实验结果分析了吡咯的摩尔浓度对材料的电导率的影响.     

聚吡咯-钛酸钡复合材料的制备和吸波性能

通过化学氧化法在乳液聚合体系中合成了聚吡咯. 然后以脱脂棉作为模板使用溶胶-凝胶法合成了钛酸钡微带. 以合成的两种材料作为基体相按不同的比例制备了聚吡咯-钛酸钡复合材料. 复合材料的结构形貌和性能通过红外、X射线衍射、扫描电镜以及网络分析仪检测. 使用PNA3629D网络分析仪测定复合材料在S和C波段的复数介电常数和微波损耗. 研究了钛酸钡和聚吡咯的质量比对复合材料吸波性能的影响. 提出了聚吡咯-钛酸钡复合材料的吸波机理.     

光互连中二元计算全息算法的研究

二元计算全息(BCGH)是光学信息处理中一个重要元件,其在动态光互连中被广泛使用.为了更好地在光互连中应用BCGH,本文设计改进了二元计算全息的选代算法,比较了几种内能函数下的迭代算法所设计的BCGH,对其象质的不同指标进行了分析.结果表明,用迭代搜索算法是光互连应用中设计BCGH的一种较理想算法.     

配合物LaL3.H2O的合成及表征

本文以３－甲基苯甲酸为配体，合成了与三价稀土镧离子的固体配合物ＬａＬ３．Ｈ２Ｏ，并对该配合物进行了元素分析，红外光谱，ＵＶ光谱，ＴＧ－ＤＴＡ，ＨＮＭＲ等的测试与表征。该配合物属螯合双齿配位。     

用显微拉曼扫描成象(mapping)法测集成电路中CoSi_2电极引起的应力

用显微拉曼扫描成象（ｍａｐｐｉｎｇ）法测集成电路中ＣｏＳｉ２电极引起的应力李碧波黄福敏张树霖（北京大学物理系北京１００８７１高玉芝张利春（北京大学微电子所北京１００８７１）ＳｔｒｅｓＩｎｄｕｃｅｄｂｙＣｏＳｉ２ＧｒｏｗｎｏｎＰｏｌｙｃｒｙｓｔａｌｉｎ...     

Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation

Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.