三氯化氮气体喷射自发分解实验研究

 在气体流动管中对三氯化氮气体喷射自发分解的现象进行了初步实验研究。在一根长80 cm，直径4 cm的圆柱形石英玻璃管中，用喷嘴向气体流动管内喷射NCl₃/He混合气体，观察到了NCl₃喷射分解时的红色火焰。测量了火焰光谱并进行了归属，认为该光谱是Cl₂(B→X)辐射跃迁。NCl­₃的喷射自发分解本质上是激波诱导发生的，即分子的动能转化为分子内能而引起的，生成的Cl原子及NCl₂自由基与NCl₃分子反应，从而得到持续燃烧火焰。实验结果表明了NCl₃自发分解反应可代替放电或燃烧作为Cl原子的来源。     

酞菁锌参杂二氧化硅凝胶基质的光谱学特征

利用溶胶-凝胶技术将四磺化酞菁锌（ZnPcS4）成功地引入到了二氧化硅凝胶基质中，制备了均匀掺杂的有机/无机复合干凝胶。研究ZnPcS4分子在溶胶-凝胶过程中紫外-可见吸收光谱的变化规律以探索其在复合体系中的存在状态。实验表明，在溶胶阶段，随着时间的延长，紫外-可见吸收光谱中单体的吸收峰强度增大，说明凝胶中酞菁单体的浓度增大；而形成凝胶后，随着时间的延长，紫外-可见吸收光谱中单体的吸收峰强度减小，二聚体的吸收峰强度增大，说明由于体系结构和微化学环境的变化，酞菁分子趋向于聚合。     

对邓小平理论历史地位的认识

邓小平理论作为我们党的指导思想，在我党历史上具有重要的历史地位。本文拟结合自已对邓小平理论的学习，谈谈对其地位的认识。     

影响冲击片雷管发火的因素

冲击片雷管由于结构比较复杂，影响其可靠性的因素也较多。本文在以前研究的基础上，通过试验，对始发装药表面粘结剂、爆炸箔组件倾斜、爆炸箔组件电阻和飞片中心缺陷对雷管的发火可靠性的影响进行了研究。     

Ni52Mn24Ga24单晶中取向内应力的热动力学计算

测量了Ni52Mn24Ga24单晶样品在磁场加载和未加载情况下马氏体相变时的相变应变.分析结果表明:用提拉法生长单晶时在晶体内部引入了单一取向的内应力,该取向内应力可诱导马氏体变体择优取向,从而导致马氏体相变时产生大的相变应变.从理论上计算了该内应力的大小.另外,对样品在马氏体态单纯磁诱导应变的热动力学研究,表明取向内应力在马氏体态依然存在.     

Nd0.5Sr0.4Pb0.1MnO3的结构和磁性

通过室温下的中子衍射和磁性测量对多晶样品Nd0.5Sr0.4Pb0.1MnO3的结构和磁性进行了实验研究.中子衍射结果表明,该样品具有正交的钙钛矿结构,空间群是Pnma,即结构发生了晶场畸变.由M-T和R-T曲线可知,居里温度TC=273 K,其特征是随着温度的增加样品经历了从铁磁金属态转变到顺磁半导态,且转变温度Tp＝225 K;用锰氧化物晶场和双交换作用的竞争解释了其温度Tp以下的金属特性.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Role of chelating agent in chemical and fluorescent properties of SnO2 nanoparticles

A modified polyacrylamide gel route is applied to synthesize SnO2 nanoparticles. High-quality SnO2 nanoparticles with a uniform size are prepared using different chelating agents. The average particle size of the samples is found to depend on the choice of the chelating agent. The photoluminescence spectrum detected at λex = 230 nm shows a new peak located at 740 nm due to the surface defect level distributed at the nanoparticle boundaries.     

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

通过调整非故意掺杂氮化镓层的厚度,分析氮化镓基LED外延生长过程中应力的演变行为,以控制外延片表面的翘曲程度,从而获得高均匀性与一致性的外延片。由于衬底与外延层之间的热膨胀系数差别较大,在生长温度不断变化的过程中,外延片的翘曲状态也随之改变。在n型氮化镓生长结束时,外延片处于凹面变形状态。在随后的过程中,外延薄膜"凹面"变形程度不断减小,甚至转变为"凸面"变形,所以n型氮化镓生长结束时外延片的变形程度会直接影响多量子阱沉积时外延片的翘曲状态。当非掺杂氮化镓沉积厚度为3.63μm时,外延片在n型氮化镓层生长结束时变形程度最大,在沉积多量子阱时表面最为平整,这与PLmapping测试所得波长分布以及标准差值最小相一致。通过合理控制非故意掺杂氮化镓层的厚度以调节外延层中的应力状态,可获得均匀性与一致性良好的LED外延片。