排序方式: 共有41条查询结果,搜索用时 15 毫秒
1.
A 40-Gb/s optical time division multiplexing (OTDM) return-to-zero (RZ) transmission experiments including a dynamic polarization mode dispersion (PMD) compensation was reported. The dynamic PMD compensator is made up of two-stage four degrees of freedom (DOF). The first stage adopts polarization controller and fixed time-delayed line. The second stage is variable differential group delay (DGD) element. The PMD monitoring technique is based on degree of polarization (DOP) as error signal. A novel practical adaptive optimization algorithm was introduced in dynamic adaptive PMD compensation. The experimental results show that the performance of the PMD compensator is excellent for 40-Gb/s RZ transmission systems with the large DGD. With this compensator, a significant improvement of system performance can be achieved in the eye pattern of a received signal. The first-order compensating ability of the compensator is greater than 30 ps. The second-order compensating ability is greater than 200 ps2. The first 相似文献
2.
对于干涉型光纤水听器外调制式相位生成载波(PGC)解调方案,光干涉强度和调制深度两个参数的波动会影响解调结果。为了消除影响,本文提出利用椭圆曲线拟合以及频域搜索的参数估计方法。根据理论分析,当调制深度在[0,3.83]区间内两种方法有效,可以适应实际情况中调制深度缓慢且小范围波动的情况。为了分析验证两种方法,本文利用不同类型的待测信号进行了数值仿真,根据仿真结果,在声信号引起的相位较大的情况下,两种方法都能对参数进行正确估计;利用频域搜索的方法适用的动态范围更大;当相关参数缓慢波动时,频域搜索法能正确跟踪估计相关参数。 相似文献
3.
为了在噪声抑制和语音失真中之间寻找最佳平衡,提出了一种听觉频域掩蔽效应的自适应β阶贝叶斯感知估计语音增强算法,以期提高语音增强的综合性能。算法利用了人耳的听觉掩蔽效应,根据计算得到的频域掩蔽阈自适应调整β阶贝叶斯感知估计语音增强算法中的β值,从而仅将噪声抑制在掩蔽阈之下,保留较多的语音信息,降低语音失真。并分别用客观和主观评价方式,对所提出的算法的性能进行了评估,并与原来基于信噪比的自适应β阶贝叶斯感知估计语音增强算法进行了比较。结果表明,频域掩蔽的β阶贝叶斯感知估计方法的综合客观评价结果在信噪比为-10 dB至5 dB之间时均高于基于信噪比的自适应β阶贝叶斯感知估计语音增强算法。主观评价结果也表明频域掩蔽的β阶贝叶斯感知估计方法能在尽量保留语音信息的同时,较好的抑制背景噪声。 相似文献
4.
振动特性对于超导磁体的各类工程应用具有重要意义,螺栓法兰盘连接是超导磁体系统的一种常见的支撑结构类型,然而螺栓结合面在低温条件下振动特性的相关研究目前尚少见报道.本研究中设计加工了简化的连接结构,在室温和液氮温度对其螺栓结合面进行振动特性的测试分析.接下来,采用集中质量法进行建模,并利用振型、频率与质量矩阵、刚度矩阵的关系求解了不同螺栓预紧力情况下的刚度矩阵,得到了系统总刚度和结合面刚度.使用上述方法对振动测量数据计算发现,该结构的系统总刚度与结合面刚度都随着预紧力增大而增大,同时液氮低温条件可使系统总刚度和结合面刚度进一步增大. 相似文献
5.
Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation 下载免费PDF全文
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. 相似文献
6.
7.
8.
探究了溶液中不同温度以及不同溶液成分(I-的引入)对金纳米四足体(GNTPs)重塑过程的影响,表明了GNTPs的重塑机制为Ostwald熟化,即弱结合的表面Au原子在高凸曲率区域溶解和在凹区域重新沉积。这种重塑过程可以随时通过镀银薄层在几秒内阻止,GNTPs的形貌可以在最大程度上得到很好的稳定,从而也可以防止其光学性质的演变。在此基础上,通过紫外可见近红外(UV-Vis-NIR)吸收光谱和基于同步辐射的小角X射线散射(SAXS)进一步研究了GNTPs/Ag的稳定性,并通过表面增强拉曼散射(SERS)光谱证实了GNTPs/Ag的光学响应。 相似文献
9.
10.
采用Monte Carlo模拟方法研究了疏水-亲水-疏水(H-P-H)型ABC三嵌段共聚物在B嵌段的选择性溶剂中的自组装行为. 模拟结果表明, 通过调节A嵌段和C嵌段的疏水性和二者之间的不相容性, 体系中可以形成多种形貌各异的胶束. 根据胶束中疏水核结构的特点, 这些胶束大体上可以被分为多核型胶束和多间隔型胶束两种类型. 通过增强疏水嵌段的疏水性或降低A嵌段和C嵌段间的不相容性, H-P-H型ABC三嵌段共聚物胶束能够发生从多核型胶束向多间隔型胶束的转变. 进一步分析胶束中聚合物的链构象等微观结构信息发现, A嵌段和C嵌段间的排斥作用和疏水作用之间存在竞争关系, 而这种竞争关系是影响体系中形成多核型胶束还是多间隔型胶束的决定性因素. 相似文献