Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon

Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.     

硅中浅杂质的激光感应光电导谱

首次采用光子能量小于硅中浅受主杂质电离能的可调谐远红外激光器作为激发源,获得了硅中浅受主杂质的光电导谱.可调谐半导体远红外激光器的调谐范围为380～500cm~(-1),光子流密度约10~(18)/cm~2·sec,用双光子跃迁对光电导谱进行了解释.对于Si:Al样品,光电导谱中的双峰分别相应于2P~1和2P~2中间态的双光子共振跃迁.也观察到了双光子透明的反共振现象.     

Photothermal ionization fourier transform spectroscopy of shallow donor states in III–V semiconductors

The technique of photothermal ionization Fourir transform spectroscopy of shallow donors is very useful for the detection and identification of residual impurity species in very high purity compound semiconductors, especially GaAs. However, the use of this technique in less pure or intentionally doped samples has resulted many incorrect impurity identifications. In this paper we show how the photothermal ionization spectra change with impurity concentration, thickness, and magnetic field, and present a model of the dielectric response of shallow impurity states which explains many of the previously anomalous results.     

Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy

A survey is presented of what has been learned from vibrational spectroscopy and theory about the structure and reorientation kinetics of hydrogen-passivated shallow impurities in Si.     

High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germanium

The excitation spectra of shallow acceptors in ultra-pure germanium (10⁹ cm^-3 < N_A ? N_D < 10¹² cm^-3 were studied using Fourier Transform Spectroscopy and photothermal excitation. Using samples with a total number of less than 10⁸ acceptor atoms, the signal to noise ratio was better than 100. In the purest samples the natural width of some excited states was found to be below the instrumental resolution of 0.03 meV (= 0.25 cm^-1). Some new observations involve the resolution of lines of states near the top of the valence band and the discovery of two unknown shallow acceptors.     

Photothermal ionization via excited states of sulfur donor in silicon

Structures in the photoionization cross-section spectra below the extrinsic edge of the doubly charged sulfur donor (613 meV) are attributed to the two-step photothermal excitation process in which the bound electron at the ground state first makes an optical transition to an excited state and it is then thermally released from the excited state to the conduction band. A weak peak (cross-section 7 × 10⁻¹⁹ cm²)at 425 meV is attributed to the intervalley optical transition 1s(A₁)→1s(T₂). Peak observed at 570 meV (10⁻¹⁷ cm²) is attributed to the 1s(A₁→2p₀ intervalley optical transition and the peak at 591 meV (3 × 10⁻¹⁷ cm²) to the 1s(A₁)→2p± intravalley optical transition. Data for electron bound at the neutral gold center has no structures which is consistent with the lack of excited states of a neutral impurity potential.     

高纯锗中浅受主的光热电离光谱

在液氦温度附近, 运用傅里叶变换光谱以及与之相连的磁光光谱系统, 对室温电阻率约为50Ω·cm的p型高纯锗样品进行了高灵敏度的光热电离光谱的研究.从实验上确定了高纯锗样品中浅杂质光热电离的最佳温度范围, 在该温度范围内测量了样品的光热电离光谱, 指出该样品中主要杂质为浅受主硼与铝. 对杂质谱线发生分裂的两种原因, 补偿性杂质导致的快速复合以及随机应力等, 进行了分析讨论. 关键词： 高纯锗 光热电离光谱 元素半导体中的杂质和缺陷能级     

高纯锗中浅受主的光热电离光谱

在液氦温度附近, 运用傅里叶变换光谱以及与之相连的磁光光谱系统, 对室温电阻率约为50Ω·cm的p型高纯锗样品进行了高灵敏度的光热电离光谱的研究.从实验上确定了高纯锗样品中浅杂质光热电离的最佳温度范围, 在该温度范围内测量了样品的光热电离光谱, 指出该样品中主要杂质为浅受主硼与铝. 对杂质谱线发生分裂的两种原因, 补偿性杂质导致的快速复合以及随机应力等, 进行了分析讨论.     

Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy

An experimental installation for analyzing electrically active impurities in high-purity silicon by investigating low-temperature transmission spectra withcompensation for donor-acceptor impurities is fabricated. The applicability of the method for studying both high-purity and doped silicon wafers is shown.Software for automatically computing the concentration of impurities is developed.     

高纯硅中补偿性杂质的光热电离光谱

首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱,确定了硅样品的最佳光热电离温度范围. 在该温度范围内,在有本征带隙光照射条件下,测量了样品的高分辨率光热电离光谱,同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号. 随后,应用外加磁场,对硼的光热电离光谱进行了研究,发现来自硼的光热电离信号,在外加磁场作用下,发生了由正向负信号的转变. 通过对该现象进行分析讨论,排除了该现象是温度效应的可能,指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足,而少数载流子快速复合模 关键词： 高纯硅 光热电离光谱 元素半导体中的杂质和缺陷能级 少数载流子快速复合     

高纯硅中补偿性杂质的光热电离光谱

首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱，确定了硅样品的最佳光热电离温度范围. 在该温度范围内，在有本征带隙光照射条件下，测量了样品的高分辨率光热电离光谱，同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号. 随后，应用外加磁场，对硼的光热电离光谱进行了研究，发现来自硼的光热电离信号，在外加磁场作用下，发生了由正向负信号的转变. 通过对该现象进行分析讨论，排除了该现象是温度效应的可能，指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足，而少数载流子快速复合模     

Photothermal desorption spectroscopy with IR lasers

Medium-energy ion scattering on the relaxed GaAs(110) surface measures a value of 29° ± 3° for the rotation of the top Ga-As atomic chains. Measurements in a scattering geometry especially sensitive to the surface-parallel displacements concomitant with such a bond rotation, show that bond-lengths in the relaxed surface remain unchanged.     

Impact ionization in silicon dioxide

The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 10⁷ V/cm for a 300°K ambient oxide.     

Photothermal detection of surface states in amorphous silicon films

A new method for the determination of surface states in amorphous silicon films is proposed. The method is based on the observation of enhancement of the interference fringe amplitude in photothermal deflection spectra, due to the presence of surface states.A theoretical approach is presented, together with the experimental results and an evaluation of the density of surface states. The method proves to be adequate, in most cases, to yield results in good agreement with those reported in literature.