Intense spontaneous amplified emission of Li2 diffuse violet bands in the 4400 Å region

We report observation of intense spontaneous amplified radiation of Li₂ diffuse violet band in the 4100–4900 Å region. The radiation is strongly enhanced when the lithium vapor in a heat pipe is optically pumped with a pulsed dye laser with the output wavelength tuned to near the Li 2s–4s two-photon resonance transition. The diffuse violet band can probably be assigned to a recently reported triplet bound-free (2³ _g a ³ _u ⁺ ) transition. It is found that the productions of the molecular diffuse band are contributed from Li atoms as well as Li₂ molecules. The excitation functions and their dependence on laser power density are presented and the mechanisms for producing the diffuse bands are discussed.Department of Physics, National Central University, Chung-Li, Taiwan, Republic of Chinabl]References     

Broadband amplified spontaneous emission from Er^3＋ -doped single-mode tellurite fibre

This paper reports on the fabrication and characterization of a newly erbium-doped single-mode tellurite glass-fibre applicable for 1.5-μum optical amplifiers. A very broad erbium amplified spontaneous emission in the range 1450--1650nm from erbium-doped single-mode tellurite glass-fibre is obtained upon excitation of a 980-nm laser diode. The effects of the length of glass-fibre and the pumping power of laser diode on the amplified spontaneous emission are discussed. The result indicates that the tellurite glass-fibre is a promising candidate for designing fibre-optic amplifiers and lasers.     

Performance of all-optical XOR gate based on two-photon absorption in semiconductor optical amplifier-assisted Mach–Zehnder interferometer with effect of amplified spontaneous emission

The performance of all-optical XOR gate is simulated and investigated. This Boolean function is realized by using a Mach–Zehnder interferometer (MZI) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor optical amplifier (SOA) incorporated in the MZI arms. By adjusting the input pulse intensities to be high enough, the TPA-induced phase change can be larger than the regular gain-induced phase change and hence support ultrafast operation in dual rail switching mode. The numerical study is carried out by taking into account the effect of amplified spontaneous emission (ASE). The dependence of the output quality factor ( \(Q\) -factor) on critical data signals and SOAs parameters is examined and assessed. The obtained results confirm that the XOR gate implemented with the proposed scheme is capable of operating at a data rate of 250 Gb/s with logical correctness and high output \(Q\) -factor.     

Amplified spontaneous emission of F2− color center in LiF crystal

Intense, directional, and narrow-bandwidth 1130-nm emission was generated from LiF crystal at room temperature by the pumping with radiation in the wavelength region of the absorption band of the F₂ ⁻ color center. The emission was observed by the pumping with radiation of pulse energy above 5 mJ, and the divergence angle of the beam was about 16 mrad. This emission is attributed to the amplified spontaneous emission by the F₂ ⁻ center. Received: 8 April 1999 / Revised version: 18 May 1999 / Published online: 16 September 1999     

Solvent-vapour treatment induced performance enhancement of amplified spontaneous emission based on poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene]

In this work,performance enhancements of amplified spontaneous emission(ASE) from poly[2-methoxy-5-(2éthyl-hexyloxy)-1,4-phenylene vinylene](MEH-PPV) have been achieved via solvent vapour treatment.Correlations between the morphology of the film and the optical performance of polymer-based ASE are investigated.The active layers are characterised by atomic force microscopy and optical absorption.The results show that the solvent-vapour treatment can induce the MEH-PPV self-organisation into an ordered structure with a smooth surface,leading to enhanced optical gain.Thus the solvent-vapour treatment is a good method for improving the optical properties of the MEH-PPV.     

Search for spontaneous π−- emission from a252Cf source

High energynp-pairs from a²⁵²Cf source were searched for. They are expected to be emitted with the absorption of negative pions which can be created through spontaneous fissions. The branching ratio is deduced as /_SF 1.3×10^–8 at the confidence level of 90%.We thank Professor M. Ishihara for encouragement. We wish to acknowledge an assistance of Dr. S. Shimoura during the experiment. This work was supported in part by a Grant-in-Aids for Scientific Research No. 6342007, Ministry of Education, Science and Culture of Japan.     

Four-wave mixing in CO via the C 1Σ+ (υ′=0) state

Coherent vacuum ultraviolet (VUV) radiation was generated by four-wave difference frequency mixing (_VUV=2₁–₂) of pulsed dye laser radiation in carbon monoxide (CO). The frequency ₁ was tuned to the C ¹⁺(=0)X ¹⁺(=0) two-photon transition, while the dye laser frequency ₂ was scaned around 17650 cm^–1 which corresponds to the A ¹(=7)«C ¹⁺(=0) transition energy. The VUV intensity was found to be strongly wavelength dependent. The analysis of the spectrum revealed (i) that the VUV intensity was enhanced by the rotational levels of the A ¹(=7) state and (ii) that the off-resonance excitation in the C ¹⁺(=0)X ¹⁺(=0) two-photon transition greatly contributed to the present four-wave mixing process. The effects of pumping laser detuning, saturation and foreign gases are briefly discussed.     

The A 1Π ∼ D 1Δ rotation-electronic interaction in CO

All available experimental data pertinent to the A ¹Π (v = 0-4) and D ¹Δ state of CO have been used to derive five independent values for the rotation-electronic interaction parameter b(A ～D). The experimental values concern a narrow R centroïd region (1·21 < R < 1·32 Å). The mean value b(A ～D) = 0·12 ± 0·01 is much smaller than the value (0·48) predicted by ab initio SCF-CI calculations which have been carried out for several internuclear distances. The experimental and calculated values for the A ¹Π ～I ¹Σ^- and a ³Π ～ a′³Σ⁺, e ³Σ^-, d ³Δ rotation-electronic perturbations available in the literature are also discussed.     

Solvent-vapour treatment induced performance enhancement of amplified spontaneous emission based on poly[2-methoxy-5-（2＇-ethyl-hexyloxy）-l, 4-phenylene vinylene]

In this work, performance enhancements of amplified spontaneous emission （ASE） from poly[2-methoxy-5-（2＇- ethyl-hexyloxy）-l,4-phenylene vinylene] （MEH-PPV） have been achieved via solvent vapour treatment. Correlations between the morphology of the film and the optical performance of polymer-based ASE are investigated. The active layers are characterised by atomic force microscopy and optical absorption. The results show that the solvent-vapour treatment can induce the MEH-PPV self-organisation into an ordered structure with a smooth surface, leading to enhanced optical gain. Thus the solvent-vapour treatment is a good method for improving the optical properties of the MEH-PPV.     

Fragment dependence of high energy γ-ray emission in the spontaneous fission of 252Cf

The high energy γ-ray emission accompanying the spontaneous fission of ²⁵²Cf has been measured in coincidence with individual fission fragments selected by discrete γ-ray transitions. The enhancement of the γ-ray emission probability in the energy range E_γ= 3–8 MeV has been observed for the fission fragments in the region of nearly symmetric mass splitting, confirming results reported in previous investigations. The γ-γ coincidence technique employed in the present work clearly demonstrate that the major contribution to this enhancement is caused by the fission channels where one fragment is near to the N= 82 or Z= 50 shell closures. The high energy γ-ray emission probability does not show any significant dependence on the number of neutrons emitted in the fission process, supporting the hypothesis that high energy γ-rays are mainly emitted from the fragments after the neutron evaporation. Received: 22 December 1998     

Isotope dependent predissociation in the C 1 Σ + , v =0 and v =1 states of CO

Rotationally resolved spectral lines in the C - X (1, 0) band of carbon monoxide are investigated under high resolution using a coherent vacuum ultraviolet laser source, continuously tunable near 107 nm. Transition frequencies are determined by calibrating against a reference standard of iodine lines, recorded with saturation spectroscopy in the visible range, yielding an absolute accuracy of 0.003 cm^-1 in the vacuum ultraviolet. Improved molecular constants for the excited state are derived and no effects of perturbation are found at the present level of accuracy. Line broadening measurements result in information on the excited state lifetime of the C ¹ Σ ⁺ , v = 1 state for five natural isotopomers of carbon monoxide: τ( ¹² C ¹⁷ O ) = 280 ps, τ( ¹² C ¹⁸ O ) = 210 ps, τ( ¹³ C ¹⁶ O ) = 295 ps, τ( ¹³ C ¹⁷ O ) = 160 ps, and τ( ¹³ C ¹⁸ O ) = 150 ps. Within the accuracy of the present measurements no effects of J-dependent lifetimes were observed, for neither of the isotopomers. In addition direct time domain measurements of the lifetime of the C ¹ Σ ⁺ , v = 0 and v = 1 states of the main isotopomer are performed in a pump-probe experiment using a picosecond VUV-laser, yielding τ( ¹² C ¹⁶ O ) = 1780 ps for v = 0 and τ( ¹² C ¹⁶ O ) = 625 ps for v = 1. For C ¹ Σ ⁺ , v = 0 in ¹²C¹⁶O and ¹³C¹⁶O the same lifetime is found; this lifetime matches experimental values of the oscillator strength and hence supports previous results showing pure radiative decay in this state; the error margins however do not exclude some low level of predissociation. The measurements indicate that the C ¹ Σ ⁺ , v = 0 state of the ¹³C¹⁸O isotopomer is predissociated with an estimated yield of 17% (i.e. above the level of predissociation for ¹²C¹⁶O.) From the combined data predissociation yields upon excitation of the C ¹ Σ ⁺ , v = 1 state are derived, lying in the range 0.84-0.91 for the five less abundant isotopomers; for the main ¹²C¹⁶O isotopomer a strongly deviating predissociation yield of 0.65 is deduced. Received 21 December 2000 and Received in final form 26 March 2001     

The 0 1 + →0+ electric monopole transition in112Cd

The low-lying levels of¹¹²Cd have been populated in the decay of¹¹²In (T _1/2=14 ^m ) produced through the¹¹²Cd (p, n)¹¹²In reaction atE _p=6.5–7 MeV. The intensity ratio of theE0 toE2K-conversion electrons from the 0 ₁ ⁺ level to the ground (0⁺) and to the first (2⁺) excited state in¹¹²Cd has been measured and the ratioX(E0/E2) =B(E0;0 ₁ ⁺ →0⁺)/B(E2;0 ₁ ⁺ →2⁺) has been determined. The result is compared with the predictions of current macroscopic models.     

Anisotropic emission of charged mesons and structure characteristic of emission source in heavy ion collisions at 1-2A GeV

Angular distributions of pious and kaons produced in heavy ion collisions at the low-energy end of high energies （1-2 A GeV） have been investigated by using a multisource ideal gas model. The model covers the expansions and movements of the emission sources, and it is related to the collective flows. By using the analytic expression and the Monte Carlo method, the azimuthal and polar angle distributions of mesons are calculated by the model and compared with the experimental data of the KaoS Collaboration.     

The physics of 2 ≠ 1 + 1

One of the most surprising consequences of quantum mechanics is the entanglement of two or more distant particles. In an entangled EPR two-particle system, the value of the momentum (position) for neither single subsystem is determined. However, if one of the subsystems is measured to have a certain momentum (position), the other subsystem is determined to have a unique corresponding value, despite the distance between them. This peculiar behavior of an entangled quantum system has surprisingly been observed experimentally in two-photon temporal and spatial correlation measurements, such as “ghost” interference and “ghost” imaging. This article addresses the fundamental concerns behind these experimental observations and to explore the nonclassical nature of two-photon superposition by emphasizing the physics of 2 ≠ 1 + 1.     

Controllable spontaneous emission from a double Λ-type four-level atom in an anisotropic photonic crystal

The spontaneous emission behavior of a double Λ-type four-level atom embedded in a photonic crystal (PC) with anisotropic dispersion relations is investigated. It is shown that some interesting phenomena such as the spectral-line enhancement, the spectral-line narrowing, the spectral-line suppression and the spontaneous emission cancellation can be observed by adjusting the density of states of the photonic-band-gap (PBG) reservoir and the combination of two pump intensities. The proposed scheme can be achieved by use of coherent pump fields into the transitions from the upper levels to the ground level in rubidium atom confined in a PC. These theoretical investigations may provide more degrees of freedom to manipulate the atomic spontaneous emission.     

Direct pion emission in D*~+→D~+π decays

The QCD multipole expansion(QCDME) is based on quantum field theory and has been extensively applied to study transitions among Υ and ψ family members. As it refers to non-perturbative QCD, however, it has only a certain application range. Even though it successfully explains the transition data among members of the Υ(ψ) family, as Eichten indicates, beyond the production threshold of mediate states it fails to match data by several orders of magnitude. In this work, by studying a simple decay mode D*→D +π~0, where a pion may be emitted before D* transitions into D, we analyze the contribution of QCD multipole expansion. As the Dπ portal is open,the dominant contribution is an OZI-allowed process where a light quark-pair is excited out from vacuum, and its contribution can be evaluated by the ~3P_0 model. Since direct pion emission is OZI-suppressed and violates isospin conservation, its contribution must be much smaller than the dominant one. By a careful calculation, we estimate that the QCDME contribution should be 3–4 orders smaller than the dominant contribution and this result can offer a quantitative interpretation for Eichten's statement.     

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylenevinylene] film

We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2’-ethylhexyloxy)1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses.The ASE characteristics of Ag-backed MEHPPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding.The threshold,the gain,and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device.The lasing threshold of this device is about 7.5 times that of a metal-free device.Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.