一维有序ZnO纳米棒阵列的制备与表征

通过改进传统水热法的密闭、高压的条件,在非密闭、常压环境下在氧化铟锡玻璃衬底上自组装生长了取向高度一致并且分散性好的ZnO纳米棒阵列.首先将乙酸锌溶胶旋涂到氧化铟锡玻璃衬底上,经热处理得到致密的ZnO纳米晶薄膜,然后将其垂直放入前驱体溶液中通过化学溶液沉积生长得到ZnO纳米棒阵列.室温条件下,对样品进行了SEM和XRD的测试.表明生成的氧化锌纳米棒阵列沿c轴取向,实现了定向生长,且纳米棒结晶较好,为六方纤锌矿结构,直径约为40 nm,长度达到微米量级.室温下的吸收光谱表明,由此方法得到的纳米棒纯度较高,有强的紫外吸收.室温下,观测到了该有序ZnO纳米棒阵列在387 nm处强的窄带紫外发射,半高宽小于30 nm,在468 nm处还有一强度较弱的蓝光发射峰.     

两步法制备空间取向高度一致的ZnO纳米棒阵列

采用两步法,即先用磁控溅射在Si(100)表面生长一层ZnO籽晶层、再利用液相法制备空间取向高度一致的ZnO纳米棒阵列.用扫描电子显微镜、X射线衍射、高分辨透射电子显微镜和选区电子衍射对样品形貌和结构特征进行了表征.结果表明,ZnO纳米棒具有垂直于衬底沿c轴择优生长和空间取向高度一致的特性和比较大的长径比,X射线衍射的(XRD)(0002)峰半高宽只有0.06°,选区电子衍射也显示了优异的单晶特性.光致发光谱表明ZnO纳米棒具有非常强的紫外本征发光和非常弱的杂质或缺陷发光特性. 关键词： ZnO纳米棒阵列 ZnO籽晶层 两步法 液相生长     

联合体驱使生长法制备ZnO纳米棒及其表征

在常压环境下采用联合体驱使生长(Aggregation-driven growth)法在镀有ZnO纳米薄膜的医用盖玻片衬底和锌箔上制备了不同直径、高取向、密集生长的ZnO纳米棒阵列结构,发现平均直径与生长时间呈线性关系。X射线衍射(XRD)谱图中出现了较强的(002)峰,表明制备的纳米棒阵列具有高度c轴择优生长取向;高分辨透射电子显微镜(HRTEM)和选区电子花样衍射图谱(SAED)结果表明我们得到的单根纳米棒为沿(002)生长的单晶结构。分析确定盖玻片上的纳米棒阵列是以ZnO纳米薄膜缓冲层上的ZnO种子颗粒为成核点生长形成的。     

两步法制备超疏水性ZnO纳米棒薄膜

采用两步法制备了超疏水性ZnO纳米棒薄膜,在用磁控溅射在普通玻璃衬底上生长一层ZnO籽晶层基础上,利用液相法制备了空间取向高度一致的ZnO纳米棒阵列,经修饰后由亲水性转变为超疏水性.用扫描电子显微镜观察了纳米棒的表面结构,用接触角测量仪测出水滴在ZnO纳米棒薄膜表面的接触角为151°±05°,滚动角为7°.用Cassie模型对ZnO纳米棒薄膜的超疏水性进行了验证. 关键词： ZnO纳米棒 超疏水 两步法     

水浴法制备ZnO纳米棒及其场发射性能

用硝酸锌(Zn(NO3)2·6H2O)与六亚甲基四胺(C6H12N4)以等浓度配制成反应溶液,通过水浴法制备出了形貌可控的棒状ZnO纳米结构,讨论了不同反应浓度及衬底对ZnO表面形貌的影响.样品的XRD和扫描电子显微镜分析结果表明,所得产物均为六方纤锌矿结构,在有晶种层的衬底上制备出的ZnO纳米棒沿(001)方向并垂直于衬底表面生长.随着反应浓度的增加,ZnO纳米棒的直径增大,长径比减小.样品的场发射性能测试表明,反应溶液浓度为0.005 mol/L,以铜膜为晶种层的硅衬底上制备出的场发射阴极具有较好的场发射性能.     

Mn掺杂ZnO纳米棒阵列的制备及其磁学性质研究

在95 ℃条件下通过水热方法制备出垂直于ITO基底高密度均匀生长的Mn掺杂ZnO（ZnO：Mn）纳米棒阵列. 纳米棒的直径约为100纳米,长约1微米,且沿［001］方向生长. XRD和XPS结果证实了Mn以替位方式掺杂到纳米棒中,并且掺杂浓度与反应物中的Mn离子浓度似呈正比关系. 所制备的ZnO：Mn纳米棒在室温均有铁磁性,其饱和磁化强度随反应物中Mn离子浓度的提高,饱和磁化强度呈现出先增大,5at.%时达到最大值,0.11 emu/g,然后减小. 铁磁性来源于取代Zn离子的Mn离子之间的铁磁交换相互作用.     

用电子束热蒸发技术制备ZnO薄膜

本文报道了用电子束热蒸发技术制备ZnO薄膜,薄膜具有（002）取向,通过电子扫描显微镜确认晶粒大小在150nm左右,现有的薄膜在525nm处有强的光致发光。     

水热法制备Co掺杂ZnO纳米棒及其光学性能

采用水热法在石英衬底上以Zn(CH3COO)2.2H2O和Co(NO3)2.6H2O水溶液为源溶液,以C6H12N4(HMT)溶液作为催化剂,在较低温度下制备了Co掺杂的ZnO纳米棒。采用X射线衍射(XRD)和扫描电子显微镜(SEM)对所生长ZnO纳米棒的晶体结构和表面形貌进行了表征,考察了Co掺杂对ZnO纳米棒微观结构和对发光性能影响的机制。结果表明:Co掺杂的ZnO纳米棒呈六方纤锌矿结构,具有沿(002)面择优生长特性,Co掺杂使ZnO纳米棒的直径变细;同时室温光致发光(PL)谱检测显示Co掺杂ZnO纳米棒具有很强的近带边紫外发光峰,而与深能级相关的缺陷发光峰则很弱。本研究采用水热法在石英衬底上于较低温度下生长出了具有较高光学质量的Co掺杂ZnO纳米棒。     

弯曲表面上ZnO 亚微米棒阵列的制备

以ZnS和金属Zn粉末混合物为蒸发源以及金属Zn片为衬底,利用热蒸发气相沉积方法,在弯曲的金属Zn微球表面上,成功地获得了ZnO亚微米棒阵列结构。场发射扫描电镜研究表明:在弯曲的Zn微球表面,能自组织地生长出大量的截面为六边形的ZnO亚微米棒,这些亚微米棒的平均直径为500nm,长约1μm。棒的顶部是平滑的。能量散射X射线谱结果表明:合成的产品只存在Zn和O两种元素,其成分比例接近1∶1。没有观察到S元素。光致发射(PL)光谱显示:在387nm紫外波长处,出现一个强的半峰全宽为16nm的窄发光峰,可归属于ZnO的近带边发光,而509nm左右较弱的宽峰则源于界面缺陷态发光。这些研究结果说明我们所合成的这种ZnO亚微米棒阵列材料在紫外受激发射器件方面有着潜在的应用价值。     

简单溶液法制备氧化锌纳米棒及光学性质

以水合醋酸锌(ZnAc₂·2H₂O)和水合肼(N₂H₄·H₂O)为反应物,在未使用任何表面活性剂的简单反应体系中制得了ZnO纳米棒。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和室温荧光光谱对产物的晶体结构、形貌和发光性质进行了表征和分析。测试结果表明,所得产物为六方纤锌矿结构ZnO纳米棒,平均直径为120 nm,产物结晶完整,尺寸均匀。这种简单溶液法制备的ZnO纳米棒在386 nm处具有一个尖锐的紫外发光峰,发射光谱的半峰全宽仅为18 nm,在可见光区有一个较弱的宽频发光带。在该反应体系中通过调控混合溶剂的配比,不使用任何表面活性剂的条件下,为ZnO一维纳米棒的形核和生长提供了微型反应空间。     

ZnO纳米带外延树枝状锯齿形缺口结构的制备及其发光特性

应用气固生长方式在没有催化剂的情况下合成出一种新奇的ZnO纳米结构．通过透射电子显微镜分析，发现这种ZnO纳米带外延晶枝直径约20 nm，在[0001]方向有着良好的外延生长取向．提出了一个模型来解释这种树枝状锯齿结构的生长．室温下光致发光测量表明这种ZnO纳米结构在382、491 nm处有一个紫外发光峰和绿光发光峰．     

不同条件制备的ZnO纳米梳结构及其性能研究

采用热蒸发法通过改变衬底放置条件在Si(111)衬底上制备出了ZnO纳米梳结构.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、场发射装置对样品的结构、形貌、光致发光光谱及场发射特性进行了分析.XRD结果表明衬底水平放置(A)和衬底竖直放置(B)制备出的样品均属于多晶六角纤锌矿结构.SEM结果表明两种衬底放置条件下的样品均为纳米梳状结构,改变衬底放置条件ZnO纳米梳的尺寸和形貌有明显改变,其中竖直放置衬底的样品B纳米尺寸较小且比较均匀.室温下的光致发光光谱表明样品B的紫外峰较样品A出现了蓝移,此外样品B的紫外峰强和可见光峰强比值较大,说明此样品的结晶质量较好.场发射特性测试结果表明两个样品的场发射都是通过电子隧道效应进行的,且样品B的场发射性能优于样品A.     

ZnO/PAA复合体系的制备和光致发光研究

通过加热法在多孔氧化铝模板的纳米孔内组装了ZnO颗粒,形成了ZnO和多孔氧化铝模板(PAA)复合体系.用Y-2000型X射线衍射仪表征了复合体系的结构,用TU-1901型紫外-可见分光光度计测量了复合体系的光学透过率,用WFY-28型荧光分光光度计测量了复合体系的光致发光.结果显示,多孔氧化铝模板中的ZnO结晶良好,平均晶粒尺寸10.8 nm;多孔氧化铝模板组装ZnO后透过率明显下降,550 nm处只有45%左右;ZnO/PAA复合体系在短波长光激发下有一个强的430 nm峰位的发光峰,随着激发波长增大,发光峰位红移,并且逐渐分解为两个峰,峰位分别在410 nm和460 nm.     

Effect of excitation and detection angles on photoluminescence spectrum from ZnO nanorod array

The angular dependent photoluminescence from ZnO nanorod array was investigated. Variations in the excitation and detection angles provided to reveal a blue shift and then splitting of a near-band edge emission into two bands. It is suggested that the observed phenomenon is caused by an inhomogeneous distribution of the emission along the nanorod length. The spatially resolved cathodoluminescence measurements confirmed that indeed the emission along the length of the nanorod is inhomogeneous and the top and bottom parts of the nanorod exhibit different emission spectra.     

ZnO纳米棒的拉曼和发光光谱研究(英文)

本文对采用湿化学方法合成的ZnO纳米棒样品的拉曼光谱和发光光谱进行了研究。由扫描电镜结果可知,合成的ZnO纳米棒具有很好的尺寸发布均匀性,直径在30 nm左右,长度大于1微米。采用显微拉曼光谱技术,得到了632.8 nm波长激发的拉曼光谱,并和体相样品的拉曼光谱进行了对比分析;由325 nm激光波长激发得到的荧光光谱可知样品具有很好的紫外发光性质。     

Photoluminescence behavior of ZnO nanorods produced by eclipse PLD from a Zn metal target

In this work, arrays of one-dimensional ZnO nanostructures were deposited on c-axis sapphire by standard and eclipse pulsed laser deposition (EPLD) using a metallic Zn target. One reference sample was grown by standard PLD and nine were grown by EPLD using a 16 by 16 mm² square shadow mask. Three shadow mask positions were used, with three depositions at varying oxygen pressures for each mask position. The oxygen partial pressure was between 100 and 200 mTorr for all growth procedures with a substrate temperature of 600 C.SEM reveals that arrays of nanorods are formed when growing by standard PLD. When grown by EPLD the rods tend to clump together with ordering on the micron scale. Low temperature photoluminescence was carried out as a function of position over several of the samples with 1 or 2 mm spacing. In general, it was found that the luminescence intensity is maximum in the center of the samples and falls off toward the edges while the shape stays roughly the same. Free exciton emission was resolved in most samples along with several other emission peaks from donor-bound excitons. The integrated PL intensity for all the EPLD samples is an order of magnitude higher than for the standard PLD sample. Linewidths are significantly reduced as well. Hence, the EPLD grown samples have superior optical quality and this growth technique shows promise for growth of high quality ZnO nanostructures.     

Photoluminescence properties of various CVD-grown ZnO nanostructures

We have studied systematically room-temperature photoluminescence (PL) properties of many nanostructured ZnO samples grown by chemical vapour deposition (CVD). Their PL spectra consist of two emissions peaked in the ultraviolet (UV) and green regions. The relative intensity of these emissions depends on the excitation energy density, size and morphology of ZnO nanostructures. Based on the excitation-density dependence of the integrated intensity ratio of UV-to-green emission, we could classify PL spectra of ZnO nanostructures into three groups characteristic of size and morphology. Our study also reveals that with increasing excitation density, the UV-peak position shifts slightly towards longer wavelengths while the green emission around 514-520 nm is almost unchanged. This green-luminescence emission is dominant when the nanostructure sizes range from 20 to 200 nm, which is related to a large surface-to-volume ratio.     

Co掺杂ZnO纳米棒的共振拉曼光谱和发光特性

采用X射线衍射(XRD)和透射电子显微镜(TEM)手段对微乳液法合成的Zn0.9Co0.1O纳米棒进行了表征.通过室温下的共振拉曼光谱和光致发光光谱手段,研究了所合成纳米材料的共振拉曼光谱和发光特性,并与体相ZnO的研究结果对比,发现合成的材料具有四阶声子紫外共振拉曼散射,而体相材料只有两阶,并观察到在紫外和可见区域所...     

Seed layer-free synthesis and characterization of vertically grown ZnO nanorod array via the stepwise solution route

A novel stepwise method was developed for the deposition of ZnO nanorod array (NRA) from the simple inorganic aqueous solution. Different from the traditional one-pot synthesis route, merely a thin liquid precursor layer adsorbed on the substrate instead of the bulk solution underwent the reaction at elevated temperature in a typical deposition cycle. Sparse and vertically grown wurtzite ZnO NRA was deposited on seed layer-free glass substrate after 20 cycles (in typically 20 min). Each individual ZnO rod possessed the well-defined hexagonal facet, the side length of about 150 nm, the aspect ratio of 2:3, and the small size dispersity. Also the overall ZnO NRA exhibited high ultraviolet photoluminescence and weak blue emission, indicating its good optical properties. Mechanism analysis indicated that, the decrease of the supersaturation degree in solution after the climax in the reaction period of each deposition cycle is the root cause of the sparse nucleation and the vertical growth of ZnO nanorods. The work has opened up a novel stepwise approach toward high quality ZnO NRA, being valuable for extending the synthetic methods of semiconductor nanostructures in mild solutions.     

Photoluminescence study of hydrogen donors in ZnO

A photoluminescence study of hydrogenated ZnO bulk crystals is presented. Two excitonic recombination lines at 3362.8 and 3360.1 meV are assigned to hydrogen shallow donors. Experimental evidence is presented that the corresponding donor to the line at 3362.8 meV, previously labeled I₄, originates from hydrogen trapped within the oxygen vacancy, H_O. The line at 3360.1 meV was found to be due to hydrogen located at the bond-centered lattice site, H_BC. The corresponding shallow donor has an ionization energy of 53 meV.