ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究，观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时，测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps. 关键词： ZnCdSe量子阱 CdSe量子点 激子 隧穿     

热分解含硫金属有机配合物制备近红外PbS量子点

以Pb(NO₃)₂, Na(S₂CNEt₂)·3H₂O为反应物, 在去离子水中合成含硫金属有机配合物Pb(S₂CNEt₂)₂. 氩气保护下, 在油酸和十八烯混合溶液中热分解前躯体Pb(S₂CNEt₂)₂, 反应时间分别为30, 60, 90, 120 min, 获得PbS量子点样品a, b, c, d. 通过红外光谱分析和热重-差热等手段对前躯体进行表征, 证明配体Na(S₂CNEt₂)·3H₂O中的两个硫原子与Pb²⁺配位成功. PbS量子点样品X射线衍射和透射电子显微镜分析表明, 合成的PbS为类球形纯立方晶系PbS纳米晶; 对PbS量子点样品紫外-可见吸收光谱和光致发光谱进行研究发现, 吸收光谱和光致发光谱随着反应时间的增加顺序红移, 表明优化热分解反应时间可以调控PbS量子点的吸收光谱和光致发光谱. PbS量子点样品a发射峰在1080 nm, 与硅基太阳能电池相匹配, 可作为硅基荧光太阳能聚集器的荧光材料. 关键词： 热分解法 含硫金属有机配合物 PbS量子点 反应时间     

CdSe/ZnSe超薄层中两类量子岛（点）之间的激子转移和它们的光学性质研究

在变温条件下，对CdSe/ZnSe超薄层中的两类量子岛（点）进行了荧光光谱研究.在低温时，这两类岛之间的激子转移主要是通过隧穿过程，而随着温度的升高，局域激子的热跳跃逐渐取代隧穿过程成为激子转移的主导机理.研究还发现，小岛是具有准零维光学性质且不同于大岛的纳米团簇，它们激子的光学特性之间存在一定的差异，但实验表明两类量子岛之间又有很大的光学关联. 关键词： 量子点 激子 CdSe     

水溶性TGA-CdTe量子点的超快弛豫动力学过程探究

本文以三个不同粒径(1^#:2.3 nm, 2^#:2.8 nm和3^#:3.5 nm)的巯基乙酸包覆的CdTe量子点(thioglycolic acid capped CdTe quantum dots, TGA-CdTe QDs)样品为研究对象, 其时间相关单光子计数(time-correlated single photon counting, TCSPC)实验得到的时间分辨光谱显示, 三个量子点的荧光平均寿命依次是～6 ns, ～10 ns和～12 ns, 其动力学过程包括慢过程和快过程两部分. 随其粒径尺寸的增加, 其慢过程延长, 快过程在变短. 然后, 通过瞬态吸收和荧光上转换两种基于飞秒的时间分辨光谱技术, 对TGA-CdTe量子点的带间弛豫过程做了探究. 实验结果显示, 三个TGA-CdTe量子点样品, 随其粒径增大, 最高激发态和最低激发态填充速率减慢, 其中, 最高激发态从0.33 ps增加至0.79 ps; 最低激发态从0.53 ps增至～1 ps. 另外, 由瞬态吸收和荧光上转换两种时间分辨手段相结合, 可得到CdTe量子点带间弛豫的完整图像, 结果显示了TGA-CdTe 量子点的一个本征特征:即在基态漂白恢复过程中的初始上升阶段, 荧光上转换信号要慢于瞬态吸收信号. 这可以为量子点在光电转换应用上提供帮助.     

Carrier capture and relaxation through a continuum background in InAs quantum dots

Carrier capture and relaxation in self-assembled InAs/GaAs quantum dots (QDs) have been studied, using bleaching rise time measurements for both the ground state (GS) and the first excited state (ES) transition, as a function of temperature (5, 77 and 293 K) and excitation density. We surprisingly observe that the bleaching rise time is longer for the ES than for the GS, indicating that the ES does not act as an intermediate state. At intermediate excitation density where the carrier relaxation is usually explained by Auger scattering, we still observe a temperature dependence pointing towards a single phonon emission process. For high excitation density, we observe a temperature-dependent plateau in the initial bleaching rise time, contradicting an Auger scattering-based relaxation model. Both these experimental results point towards a relaxation through the continuum background, followed by a single LO-phonon emission towards the QD GS.     

Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer

A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot(QD) samples,in which there exists a long-lived metastable state in the wetting layer(WL)through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands.In this article we have proposed a new three-level model to simulate the exciton emission decay curve.In this model,assuming that the excitons in a metastable state will diffuse and be trapped by QDs,and then emit fluorescence in QDs,a stretchedlike exponential decay formula is derived as I(t)=At~(β-1)e~(-(rt)β),which can describe well the long lifetime decay curve with an analytical expression of average lifetime     

溶胶-凝胶法制备PbS量子点玻璃的研究

采用溶胶-凝胶法合成了半导体PbS量子点掺杂的Na₂O-B₂O₃-SiO₂玻璃,研究了不同热处理工艺对玻璃结构的影响,利用多种表征手段研究了量子点掺杂玻璃中的微晶结构及其光学性能.孔径分析结果表明随着热处理温度的升高玻璃内部孔径不断减小,最终孔结构几乎完全消失;红外光谱分析表明玻璃网络结构在较低温度下己经形成,随温度的升高不断密实化; X射线光电子能谱证明了玻璃中存在PbS,高分辨透射电镜表征了玻璃基质中掺杂的微晶结构是PbS,统计计算表明,玻璃中微晶的平均粒径尺寸为3.5nm;吸收光谱分析发现,微晶掺杂玻璃的吸收边界较PbS的块体材料发生了明显的蓝移,产生了量子尺寸效应;通过Z扫描技术测得其非线性折射率γ为-2.03×10^-14cm²/GW. 关键词： PbS量子点 半导体 非线性光学效应 溶胶-凝胶法     

生长方向对量子点应变与应变弛豫的影响

由于材料弹性的各向异性与表面能的各向异性, 不同的生长方向或生长面, 量子点有不同的力学性能与行为. 本文基于各向异性弹性理论的有限元方法, 以金字塔型自组织InAs/GaAs半导体量子点为研究对象, 分别在7个常见的生长方向或生长面上, 对其应变能和应变弛豫能、自由能等进行了分析计算, 得到了这些能量随生长方向的变化规律. 结果表明(211)量子点应变弛豫能最大, 而(100)量子点应变弛豫能最小. 这些结果可为可控制备量子点提供理论参考. 关键词： 量子点 生长方向 平衡形态 应变弛豫     

Tunneling current of the Coulomb-coupled quantum dots embedded in n-n junction

Taking account of the electron--electron (hole) and electron--hole interactions, the tunneling processes of the main quantum dot (QD) Coulomb-coupled with a second quantum dot embedded in n--n junction have been investigated. The eighteen resonance mechanisms involved in the tunneling processes of the system have been identified. It is found that the tunneling current depends sensitively on the electron occupation number in the second quantum dot. When the electron occupation number in the second dot is tiny, both the tunneling current peaks and the occupation number plateaus in the main QD are determined by the intra-resonance mechanism. The increase of the electron occupation number in the second dot makes the inter-resonance mechanism participate in the transport processes. The competition between the inter and intra resonance mechanisms persists until the electron occupation number in the second dot reaches around unity, leading to the consequence that the inter-resonance mechanisms completely dominate the tunneling processes.     

Mn掺杂ZnSe量子点变温发光性质研究

量子点(QD)照明器件中电流导致的焦耳热会使其工作温度高于室温,因此研究量子点的发光热稳定性十分重要。本文利用稳态光谱和时间分辨光谱研究了具有不同壳层厚度的Mn掺杂ZnSe(Mn: ZnSe)量子点的变温发光性质,温度范围是80～500 K。实验结果表明,厚壳层(6.5单层(MLs))Mn: ZnSe量子点的发光热稳定性要优于薄壳层(2.6 MLs)的量子点。从80 K升温到400 K的过程中,厚壳层Mn: ZnSe量子点的发光几乎没有发生热猝灭,发光量子效率在400 K高温下依然可以达到60%。通过对比Mn: ZnSe量子点的变温发光强度与荧光寿命,对Mn: ZnSe量子点发光热猝灭机制进行了讨论。最后,为了研究Mn: ZnSe量子点的发光热猝灭是否为本征猝灭,对具有不同壳层厚度的Mn: ZnSe量子点进行了加热-冷却循环(300-500-300 K)测试,发现厚壳层的Mn: ZnSe量子点的发光在循环中基本可逆。因此,Mn: ZnSe量子点可以适用于照明器件,即使器件中会出现不可避免的较强热效应。     

Stimulated emission from PbS‐quantum dots in glass matrix

The luminescence behavior of PbS‐quantum dots in glass matrix (PbS:Glass) is investigated. Steady‐state and time‐resolved photoluminescence are applied in a wide range of excitation densities up to pulse energies exceeding 50 µJ/cm². While perfect linear recombination is observed across four orders of magnitude, an additional radiative recombination mechanism emerges at an excitation density of 1 µ J/cm² per pulse at 390 nm excitation and increases the external quantum efficiency. The time constant of this process is ∼20–40 ps. It is ascribed to stimulated emission. No hint to any non‐linear non‐radiative processes such as Auger recombination is observed. Thermal effects, however, still set limits. This is encouraging news for PbS:Glass as potential laser material.     

Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots

We investigate the electron dynamics of p-type modulation doped and undoped InGaAs/GaAs quantum dots using up-conversion photoluminescence at low temperature and room temperature. The rise time of the p-doped sample is significantly shorter than that of the undoped at low temperature. With increasing to room temperature the undoped sample exhibits a decreased rise time whilst that of the doped sample does not change. A relaxation mechanism of electron-hole scattering is proposed in which the doped quantum dots exhibit an enhanced and temperature independent relaxation due to excess built-in holes in the valence band of the quantum dots. In contrast, the rise time of the undoped quantum dots decreases significantly at room temperature due to the large availability of holes in the ground state of the valence band. Furthermore, modulation p-doping results in a shorter lifetime due to the presence of excess defects.     

Anisotropic exciton Stark shift in hemispherical quantum dots

The exciton Stark shift and polarization in hemispherical quantum dots(HQDs) each as a function of strength and orientation of applied electric field are theoretically investigated by an exact diagonalization method. A highly anisotropic Stark redshift of exciton energy is found. As the electric field is rotated from Voigt to Faraday geometry, the redshift of exciton energy monotonically decreases. This is because the asymmetric geometric shape of the hemispherical quantum dot restrains the displacement of the wave function to the higher orbital state in response to electric field along Faraday geometry. A redshift of hole energy is found all the time while a transition of electron energy from this redshift to a blueshift is found as the field is rotated from Voigt to Faraday geometry. Taking advantage of the diminishing of Stark effect along Faraday geometry, the hemispherical shapes can be used to improve significantly the radiative recombination efficiency of the polar optoelectronic devices if the strong internal polarized electric field is along Faraday geometry.     

Room‐temperature luminescence decay of colloidal semiconductor quantum dots: Nonexponentiality revisited

While time‐resolved luminescence spectroscopy is commonly used as a quantitative tool for the analysis of the dynamics of photoexcitation in colloidal semiconductor quantum dots, the interpretation of the virtually ubiquitous nonexponential decay profiles is frequently ambiguous, because the assumption of multiple discrete exponential components with distinct lifetimes for resolving the decays is often arbitrary. Here, an interpretation of the room‐temperature luminescence decay of CdSe/ZnS semiconductor quantum dots in colloidal solutions is presented based on the Kohlrausch relaxation function. It is proposed that the decay can be understood by using the concept of Förster resonance energy transfer (FRET) assuming that the role of acceptors of photoexcitation energy is played by high‐frequency anharmonic molecular vibrations in the environment of the quantum dots. The term EVFRET (Electronic ‐ Vibrational Förster Resonance Energy Transfer) is introduced in order to unequivocally refer to this energy transfer process.

     

Dynamics of single InGaN quantum dots

Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4–60 K decrease with increasing temperature. Different dots show similar lifetimes of 2 ns.     

激子旋转弛豫对低掺杂卟啉侧链聚合物荧光衰变过程的影响

利用激子旋转扩散理论研究了一类低掺杂卟啉侧链聚合物中卟啉侧链基团的旋转对其发光动力学过程的影响.研究表明,卟啉侧链基团的旋转行为是导致激发态无辐射能量弛豫的重要途径.基团旋转越容易,能量弛豫速度越快,这可导致一个快速的荧光衰变动力学过程.在卟啉低掺杂浓度和聚合物分子链间距离较大的情况下,卟啉侧链基团的旋转成为影响荧光寿命和发光效率的主要因素.对实验测得的两种样品的荧光弛豫过程进行了拟合,理论结果与实验结果符合较好. 关键词： 激子旋转弛豫 瞬态荧光 卟啉侧链聚合物     

Direct spin–phonon coupling of spin-flip relaxation in quantum dots

Within the frame of the Pavlov–Firsov spin–phonon coupling model, we study the spin-flip assisted by the acoustical phonon scattering between the first-excited state and the ground state in quantum dots. We analyze the behaviors of the spin relaxation rates as a function of an external magnetic field and lateral radius of quantum dot. The different trends of the relaxation rates depending on the magnetic field and lateral radius are obtained, which may serve as a channel to distinguish the relaxation processes and thus control the spin state effectively.     

水溶性CdTe:Mn量子点的双光子吸收

采用激发波长800 nm、脉宽50 fs、重复频率1 kHz的Ti:sapphire放大飞秒激光器作为激发光源,利用开孔Z扫描技术研究了不同粒径的CdTe:Mn量子点的非线性吸收性质。理论计算结果表明,同一生长时间CdTe:Mn量子点的双光子吸收系数是CdTe量子点的1.1倍,其双光子吸收系数随量子点尺寸的减小而增大,这是由于CdTe:Mn量子点非线性吸收属于反饱和吸收,掺杂了Mn元素,减小了表面缺陷浓度,表明掺杂量子点具有很好的双光子吸收现象。     

InAs量子点中自旋-轨道相互作用下电子自旋弛豫的参量特征

本文在处理InAs单电子量子点哈密顿模型时,将自旋-轨道(SO)相互作用作为微扰项,计算在Fock-Darwin本征函数下SO相互作用的矩阵元,利用其对能级和波函数的二阶修正,并且考虑新的能级对g因子和有效质量m^*的影响,计算得到在声子协助下电子的自旋弛豫率Γ的表达式.给出了InAs量子点中声子协助的电子自旋弛豫率Γ对于限制势频率ω₀、温度T、纵向高度z_{0关键词： 自旋弛豫率 自旋-轨道(SO)相互作用 InAs量子点 Fock-Darwin本征函数}