Tb3+离子在固溶体(Y0.9Gd0.1)2O2S和(Gd0.9La0.1)2O2S中的发光

用稀土氧化物硫化法合成了固溶体发光材料(Y0.9Gd0.1)2O2S:Tb和(Gd0.9La0.1)2O2S:Tb,并且用阴极射线和254nm紫外线两种激发方式测试了它们的发光性能.研究了固溶体(Y0.9Gd0.1)2O2S:Tb和(Gd0.9La0.1)2O2S:Tb中Tb3+离子5D3——7FJ和5D4——7FJ的能级跃迁强度随Tb3+离子浓度而变化的关系,以及它们的发光色度随激活剂Tb3+离子浓度的变化,探讨了Tb3+离子的浓度猝灭机理.     

Anomalous states of the crystal structure of (Rb0.1(NH4)0.9)2SO4 solid solutions in the temperature range 4.2–300 K

Crystals of (Rb_0.1(NH₄)_0.9)₂SO₄ solid solutions are studied using x-ray diffractometry. It is revealed that the temperature dependence of the lattice parameter a exhibits an anomalous behavior, namely, the “invar effect” at temperatures above the ferroelectric phase transition point T _c and an anomalous increase in the temperature range from T _c to the liquid-helium temperature. An anomalous increase in the lattice parameter a and an increase in the intensity of Bragg reflections with a decrease in the temperature are interpreted within the model of the coexistence of two sublattices hypothetically responsible for the ferroelectric phase transition. A series of superstructure reflections observed along the basis axes corresponds to a sublattice formed in the matrix of the host structure. Analysis of the ratio between the lattice parameters of these structures allows the inference that, in the temperature range 4.2–300 K, the structure of the crystal under investigation can be considered an incommensurate single-crystal composite.     

Quantum phase transition in the itinerant antiferromagnet (V0.9Ti0.1)2O3

Quantum-critical behavior of the itinerant electron antiferromagnet (V0.9Ti0.1)2O3 has been studied by single-crystal neutron scattering. By directly observing antiferromagnetic spin fluctuations in the paramagnetic phase, we have shown that the characteristic energy depends on temperature as c1 +c2T3/2, where c1 and c2 are constants. This T3/2 dependence demonstrates that the present strongly correlated d-electron antiferromagnet clearly shows the criticality of the spin-density-wave quantum phase transition in three space dimensions.     

2H-Nb_(0.9)Ta_(0.1)Se_2中磁通涡旋输运的标度行为

测量了 2H Nb0 .9Ta0 .1 Se2 单晶样品在不同电流下电压随磁场变化的曲线V(H) ,并从V(H)曲线得到V(I)数据 .使用标度关系V =α(I-Ic)β进行了拟合 ,得到了临界电流随磁场Ic(H)和微分电阻随磁场Rd 的变化关系 .在微分电阻随磁场变化的曲线中 ,电流较大时 ,靠近上临界磁场Hc2 附近出现一个强峰 ,而在低电流下 ,该峰消失 .同时在临界电流峰效应区的起始处出现一小峰 .实验结果表明掺Ta后 ,涡旋体系的动力学特性发生了显著的变化 .     

Multifold polar states in Zn-doped Sr_(0.9)Ba_(0.1)TiO_3 ceramics

We investigate the effect of Zn doping on the dielectricity and ferroelectricity of a series of polycrystalline Sr0.9-xZnxBa0.1TiO3(0.0% ≤ x ≤ 5.0%) ceramics. It is surprisingly observed that the Zn doping will produce the multifold polar states, i.e., the Zn-doped ceramic will convert a reduced polar state into an enhanced polar state, and eventually into a stabilized polar state with increasing the doping level x. It is revealed that in the background of quantum fluctuations, the competition between the Zn-doping-induced lattice contraction and the Ba-doping-induced lattice expansion is responsible for both the reduced polar state and the enhanced polar state coming into being. Also, the addition of the antiferrodistortive effect, which is the antipolar interaction originating from the opposite tilted-Ti O6 octahedra rotation, represents the core physics behind the stabilized polar state.     

Superconductivity of Bi2 (Sr0.9Ca0.1)2 CuO y single crystals

Bi₂ (Sr_0.9Ca_0.1)₂ CuO _y single crystals were grown by the self-flux method. The temperature dependence of resistance and ac susceptibility measurements showed that the as-grown crystal is semiconductive between 4.2 K and 300 K. However, after annealing in air for more than 20 days the crystal became superconducting with a T _c of 66 K obtained from the R-T curve. The ac susceptibility data also showed a strong superconducting transition at 71 K. X-ray diffraction indicated that the structure of the as-grown and the annealed crystal both are orthorhombic. The T _c of 71 K of the Bi₂ (Sr_0.9Ca_0.1)₂ CuO _y crystal may be due to the increase of oxygen content in the crystal after the long-time annealing in air. It is suggested that the superconductivity of the Ca-doped 2201 phase of the Bi-based system, which up to now was found to have a T _c=7–22 K, is similar to the 2201 phase of the Tl-based system.     

Fine structure of the cubic semiconductor compound Zn0.9Ni0.1S

The fine structure of a single crystal of the Zn_0.9Ni_0.1S cubic compound synthesized by the chemical transport method has been investigated at room temperature using thermal neutron diffraction. It has been found that the diffraction patterns of this compound, along with strong Bragg reflections of the facecentered cubic phase, include a system of diffuse maxima, which indicate the occurrence of a local deformation of the cubic structure by the Jahn-Teller nickel ions. Results of this experiment have been compared with the previously obtained data for the lightly doped Zn_{1 ? x} Ni _x Se single crystal (x = 0.002).     

The IR and Raman spectra of Tb0.2Dy0.9Gd0.9(MoO4)3

The IR and Raman spectra of the ternary molybdate Tb_0.2Dy_0.9Gd_0.9(MoO₄)₃ have been recorded and analysed on the basis of the vibrations of MoO²⁻₄ ions. The splitting of the non-degenerate Mo—O symmetric stretching mode due to the vibrational interaction between neighbouring ions is observed. The large splitting observed for the v₃(F₂) mode is probably due to the large number of MoO²⁻₄ ions and strong interlayer coupling present in the unit cell.     

Fabrication and investigation of SnO2-As2(Se0.9Te0.1)3 and SnO2-(As0.67Sb0.33)2Se3 heterojunctions

A method for fabricating and the results of an investigation of SnO₂-As₂(Se_0.9Te_0.1)₃ and SnO₂-(As_0.67Sb_0.33)₂Se₃ heterojunctions are described. The spectral and current-voltage characteristics of the heterojunctions obtained are presented. Zh. Tekh. Fiz. 68, 55–57 (October 1998)     

Precipitation kinetics of W2B5 in (Ti0.4W0.5Cr0.1)B2 solid solutions

The isothermal precipitation kinetics of W₂B₅ secondary phase from supersaturated polycrystalline (Ti_0.4W_0.5Cr_0.1)B₂ solid solutions were investigated with X-ray diffractometry and scanning electron microscopy in the temperature range between 1500 and 1700°C. The precipitate formation is described by a modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) model, where W₂B₅ particles nucleate preferentially at grain boundaries and subsequently grow into the volume by a two-dimensional process controlled by volume diffusion of the transition metals. Numerical calculations are used to describe quantitatively the time dependence of the precipitated fraction and to determine a differential JMAK exponent n _diff which gives information on the nucleation and growth modes. n _diff decreases during the precipitation process from 2 to about 0.8 for all temperatures investigated. The first limit corresponds to the classical JMAK model (two-dimensional diffusional growth and constant nucleation rate) and the decrease in n _diff is the consequence of an impingement of the nucleating and growing particles in the late stages of the process. Nucleation and growth rates are determined as functions of reciprocal temperature, where the first quantity shows a non-monotonic behaviour with a maximum at about 1650°C and the second quantity exhibits an Arrhenius behaviour with an activation enthalpy of 3.6?eV. From this it can be concluded that the overall precipitate formation is dominated by the kinetics of atomic motion at low temperatures and by the thermodynamics of nucleation at high temperatures.     

Optical and thermoelectric characterizations of electroplated n-Bi2(Te0.9Se0.1)3

Bismuth selenotelluride (Bi₂(Te_0.9Se_0.1)₃) films were electrodeposited at constant current density from acidic aqueous solutions with Arabic gum in order to produce thin films for miniaturized thermoelectric devices. X-ray fluorescence spectroscopy determined film compositions. X-ray diffraction pattern shows that the films as deposited are polycrystalline, isostructural to Bi₂Te₃ and covered by crystallites. Mueller-matrix analysis reveals that the electroplated layers are optically like an isotropic medium. Their pseudo-dielectric functions were determined using mid-infrared spectroscopic ellipsometry. Tauc-Lorentz combined with Drude dispersion relations were successfully used. The energy band gap E_g was found to be about 0.15 eV. Moreover, the fundamental absorption edge was described by an indirect optical band-to-band transition. From Seebeck coefficient measurement, films exhibit n-type charge carrier and the value of thermoelectric power is about −40 μV/K.     

Optical spectra of CaF2(Tb) crystals

The luminescence and absorption spectra of fluorite crystals, alloyed with terbium fluorides, oxyfluorides, and oxides at concentrations of 0.01 to 5 mol.% were studied. The change in the optical spectra was studied as a function of the chemical composition of the alloy addition and also as a function of the concentration. It is proposed that the change with the concentration in the spectra of the crystals takes place as a consequence of mutual interactions between the ions with formation of cation pairs. It was observed that the ratio of the relative luminescence intensities of the crystals to the absorption coefficient changes nonlinearly with the concentration of the alloying addition. The problem of an interaction between an isomorphic admixture and crystal defects is discussed.In conclusion, the authors express their gratitude to E. V. Sobolev and M. V. Konovalova for help in the work.     

Conductive property of Zr_(0.1)Fe_(0.9)V_(1.1)Mo_(0.9)O_7 with low thermal expansion

Low thermal expansion materials are mostly ceramics with low conductive property, which limits their applications in electronic devices. The poor conductive property of ceramic ZrV_2 O_7 could be improved by bi-substitution of Fe and Mo for Zr and V, accompanied with low thermal expansion. Zr_(0.1) Fe_(0.9) V_(1.1 )Mo_(0.9 )O_7 has electrical conductivity of 8.2× 10~(-5) S/cm and 9.41× 10~(-4) S/cm at 291 K and 623 K, respectively. From 291 K to 413 K, thermal excitation leads to the increase of carrier concentration, which causes the rapid decrease of resistance. At 413–533 K, the conductivity is unchanged due to high scattering probability and a slowing increase of carrier concentration. The conductivity rapidly increases again from533 K to 623 K due to the intrinsic thermal excitation. The thermal expansion coefficient of Zr_(0.1) Fe_(0.9) V_(1.1 )Mo_(0.9 )O_7 is as low as 0.72× 10~(-6 )K~(-1) at 140–700 K from the dilatometer measurement. These properties suggest that Zr_(0.1) Fe_(0.9) V_(1.1 )Mo_(0.9 )O_7 has attractive application in electronic components.