Validity of the two-term Boltzmann approximation employed in the fluid model for high-power microwave breakdown in gas

The electron energy distribution function （EEDF）, predicted by the Boltzmann equation solver BOLSIG＋ based on the two-term approximation, is introduced into the fluid model for simulating the high-power microwave （HPM） breakdown in argon, nitrogen, and air, and its validity is examined by comparing with the results of particle-in-cell Monte Carlo collision （PIC/MCC） simulations as well as the experimental data. Numerical results show that, the breakdown time of the fluid model with the Maxwellian EEDF matches that of the PIC/MCC simulations in nitrogen; however, in argon under high pressures, the results from the Maxwellian EEDF were poor. This is due to an overestimation of the energy tail of the Maxwellian EEDF in argon breakdown. The prediction of the fluid model with the BOLSIG＋ EEDF, however, agrees very well with the PIC/MCC prediction in nitrogen and argon over a wide range of pressures. The accuracy of the fluid model with the BOLSIG＋ EEDF is also verified by the experimental results of the air breakdown.     

微波大气击穿阈值的理论研究

本文通过对使用有效场强(或均方根场强)得到的微波大气击穿阈值表达式进行讨论, 指出其推导中所做的假设及这些假设应用到微波大气击穿过程中存在的问题. 然后分别使用解析理论和数值模拟对微波大气击穿过程中的有效电子温度变化过程和击穿阈值进行研究, 并将其与直流电场进行比较. 分析发现在高气压下, 电子能量转移频率高, 有效电子温度随电场大幅振荡, 由于电离频率随有效电子温度的增长率大于电子能量损失随有效电子温度的增长率, 因此在高气压时, 微波大气击穿阈值低于使用有效场强的击穿阈值. 通过大量分析, 给出了理论推导和数值模拟得到的微波大气击穿阈值拟合表达式.     

宽气压范围空气中微波击穿电场的计算公式

为了简便快捷地计算微波击穿电场,依据电子扩散模型的基本理论,结合气体放电的基本参量,应用特征扩散长度的概念,给出了适合于规则结构微波部件的击穿电场的计算方法。为避免各种气体参数的不确定性对计算准确度的影响,对等效直流电场与特征扩散长度之间的实验关系进行了拟合,并根据等效直流电场的定义,得出了一个适用于较高气压范围的击穿电场计算表达式。为了将该计算表达式扩展到更低的气压范围,综合考虑了电子扩散模型和基于二次电子发射现象的真空微放电机理,引入了一个合理形式的等效扩散长度,进一步给出了适合于更广气压范围的微波击穿电场的计算表达式,计算结果更符合A.D.Macdonald的实验结果。     

Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components

The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.     

极不均匀电场下重复频率纳秒脉冲气体击穿实验研究

 实验研究了尖-板电极中,不同重复频率（10,100,500,1 000 Hz）、不同间隙(0.5,1 cm),不同气压（0.1～0.4 MPa）等条件下空气的绝缘特性。得到了击穿时延、重复频率耐受时间、施加脉冲个数等与施加电压、重复频率的关系。研究发现：在该实验条件下击穿时延随着场强与气压的比值减小而增加,但重频耐受时间和脉冲击穿个数并没有明显变化;随着重复频率的提高,击穿时延和重频耐受时间会减小,但脉冲击穿个数可能会增加;且重复频率条件下击穿的极性效应不明显;重复施加的脉冲产生大量的亚稳态粒子和残余电荷影响放电的发展过程;负离子的脱负或正离子碰撞阴极的过程,及亚稳态粒子的去激励作用给击穿提供了有效初始电子。     

高功率微波沿面闪络击穿机制粒子模拟

针对高功率微波介质沿面闪络击穿物理过程,首先建立了理论模型,包括：动力学方程、粒子模拟算法、二次电子发射, 以及电子与气体分子蒙特卡罗碰撞模型、电子碰撞介质表面退吸附气体分子机制;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别针对真空二次电子倍增、高气压体电离击穿和低气压面电离击穿过程,运用该程序仔细研究了电子和离子随时间演化关系、电子运动轨迹、电子及离子密度分布、空间电荷场时空分布、电子平均能量、碰撞电子平均能量、碰撞电子数目随时间演化关系、电子能量分布函数、平均二次电子发射率以及能量转换关系。研究结果表明：真空二次电子倍增引发的介质表面沉积功率只能达到入射微波功率1%左右的水平,不足以击穿;气体碰撞电离主导的高气压体电离击穿,是由低能电子（eV量级）数目指数增长到一定程度导致的,形成位置远离介质表面,形成时间为s量级;低气压下的介质沿面闪络击穿,是在二次电子倍增和气体碰撞电离共同作用下,由于数目持续增长的高能电子（keV量级）碰撞介质沿面导致沉积功率激增而引发的,形成位置贴近介质沿面,形成时间在ns量级。     

波导内场增强法测量微波气体击穿

提出并研究了波导内场增强法测量微波气体击穿的实验方案,在密闭波导内加金属针实现电场增强,通过调节微波源辐射功率及两针距离,使微波传输达到气体击穿的条件。介绍了实验原理及诊断方法,进行了频率2.86 GHz、脉宽180 ns的微波在0.1 MPa空气中的击穿实验,分析了实验中得到的典型波形。结果表明实验现象与设计吻合,验证了该方案研究微波气体击穿的可行性。     

高功率微波大气击穿阈值分析及实验

对高功率微波脉冲的大气击穿进行了理论分析和数值模拟,推导了单脉冲和重复频率脉冲两种情况下电子数密度的变化表达式通过计算给出了在不同大气压强、脉冲宽度以及重复频率的条件下,高功率微波脉冲大气击穿阈值的变化规律。设计了高功率微波大气击穿实验系统,并开展了实验研究,实验的结果与数值模拟结果基本一致。     

波导内场增强法测量微波气体击穿

 提出并研究了波导内场增强法测量微波气体击穿的实验方案,在密闭波导内加金属针实现电场增强,通过调节微波源辐射功率及两针距离,使微波传输达到气体击穿的条件。介绍了实验原理及诊断方法,进行了频率2.86 GHz、脉宽180 ns的微波在0.1 MPa空气中的击穿实验,分析了实验中得到的典型波形。结果表明实验现象与设计吻合,验证了该方案研究微波气体击穿的可行性。     

相对论返波管中击穿现象粒子模拟

随着相对论返波管(RBWO)输出功率的提高,RBWO内部击穿问题日益突出。击穿过程中产生的等离子体,会降低输出功率并导致脉冲缩短,大大限制了RBWO的输出单脉冲能量。采用3维粒子模拟,在反射器、慢波结构、提取腔局部区域产生等离子体,建立了RBWO单点击穿及多点击穿模型,获得了等离子体产生的区域和密度对微波输出性能的影响规律。模拟结果表明,输出微波功率随等离子体密度增加而迅速降低,多点击穿相对于单点击穿情况更容易引起输出微波脉冲提前终止,且发射器击穿产生的等离子体效应更为明显。     

高功率激光表面大气击穿阈值的波长关系

通过对大气击穿的物理机制、低空大气中的自由电子及其寿命和电离机制进行讨论,给出了高功率激光大气击穿较为明晰的物理图像。并通过理论分析,给出了激光大气击穿阈值的波长关系,对给定波长激光的大气击穿阈值可以作出迅速的估值,是一种较为简捷的方法     

The electrical breakdown of gases in the presence of crossed electric and magnetic fields

The breakdown characteristics of a gas in the presence of crossed electric and magnetic fields are discussed in terms of the Townsend ionization coefficients. The “equivalent pressure” concept is used to assess the effect of a transverse magnetic field on the first Townsend coefficient and the objections which have been raised to the application of this approach to breakdown potentials are shown to be removed by a consideration of the dependence of the second Townsend coefficient upon electric and magnetic field strengths.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

Empirical analysis of picosecond breakdown in sulfur hexafluoride

Using state of the art equipment and multiple simultaneous data acquisition systems, breakdown in sulfur hexafluoride (SF₆) is examined in high resolution. Recorded risetimes can be as fast as 50 ps. Influential parameters of breakdown are identified, recorded, and categorized. Methods for removing the impact of the measurement system are implemented in efforts to distinguish the physical phenomenon from influential external factors. Observed waveforms and breakdown characteristics are categorized into three types. Each type is particular to a specific parameter range – i.e. electric field E/p or the product of pressure and distance pd.     

垂直相交高功率微波大气击穿的理论研究

将描述电磁波的Maxwell方程组和简化的等离子体流体方程组耦合数值求解, 对垂直相交高功率微波电离大气产生等离子体的过程进行了模拟研究. 对于相干(同频)垂直相交高功率微波束, 只有当初始自由电子出现在(或到达)强场(干涉加强)处, 自由电子才会被加速并与本底气体发生碰撞电离, 在放电的开始阶段, 等离子体区域主要沿着强场区运动, 并逐渐形成一个由分立的丝状等离子体组成的带状区域. 这个带状等离子体区域足够长以后, 由于其对电磁波的吸收和反射, 其将等离子体两侧的两束微波分割开. 随着时间的推移, 在等离子体附近的强场区, 不断出现新的等离子体带. 比较发现, 当其他条件相同时, 相干微波束产生的等离子体区域比非相干微波束大. 关键词： 相交高功率微波束 大气击穿     

Electric/magnetic flux tube on the background of magnetic/electric field

It is argued that the phenomenon of a flux tube in quantum chromodynamics is closely connected with a spontaneously symmetry breakdown of gauge theory. It is shown that in the presence of a mass term in the SU(2) gauge theory the Nielsen‐Olesen equations describe the flux tube surrounded by an external field.     

高功率微波及材料特性参数对沿面击穿的影响

为研究高功率微波及材料特性参数对介质沿面闪络击穿过程的影响,采用自编的1D3V PIC-MCC程序,通过粒子模拟手段,得到了电子与离子数目、电子及离子密度分布、空间电荷场时空分布、电子平均能量、放电功率、表面沉积功率、激发电离损耗功率、电离频率等重要物理量。结果表明：电离频率随场强增加而增加,达到饱和后缓慢下降,强场诱发的二次电子数目更多导致本底沉积功率增高;电离频率随频率减小而增加,达到饱和后缓慢下降,频率太高会抑制次级电子倍增;因此,低频强场下击穿压力较大;反射引发表面电场下降及磁场增加效应,降低表面场强虽使表面击穿压力下降,但磁场的增加会导致二次电子倍增起振时间缩短,且会增加器件内部击穿风险;圆极化相对线极化诱导二次电子数目更多、本底沉积功率更高,击穿风险增加;短脉冲产生电子、离子总数少,平均能量低,沉积功率低,击穿风险低于长脉冲;脉冲上升时间的缩短和延长,只会提前或推后击穿时间,并不会改善击穿压力;材料二次电子发射率的增加会给击穿造成巨大压力,表面光滑度对击穿过程影响不大;电离频率和电子平均能量随释气压强增加均先增加后减小,低气压二次电子倍增占优,高气压碰撞电离占优。     

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

A reduced surface electric field in an AlGaN/GaN high electron mobility transistor(HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas(2-DEG) channel as an electric field shaping layer.The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions.Compared with the HEMTs with conventional sourceconnected field plates and double field plates,the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge.By optimizing both the length of Mg-doped layer,L m,and the doping concentration,a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure,respectively.In a device with V GS = -5 V,L m = 1.5 μm,a peak Mg doping concentration of 8×10 17cm-3 and a drift region length of 10 μm,the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

极不均匀电场下重复频率纳秒脉冲气体击穿实验研究

实验研究了尖-板电极中,不同重复频率（10,100,500,1 000 Hz）、不同间隙(0.5,1 cm),不同气压（0.1～0.4 MPa）等条件下空气的绝缘特性。得到了击穿时延、重复频率耐受时间、施加脉冲个数等与施加电压、重复频率的关系。研究发现：在该实验条件下击穿时延随着场强与气压的比值减小而增加,但重频耐受时间和脉冲击穿个数并没有明显变化;随着重复频率的提高,击穿时延和重频耐受时间会减小,但脉冲击穿个数可能会增加;且重复频率条件下击穿的极性效应不明显;重复施加的脉冲产生大量的亚稳态粒子和残余电荷影响放电的发展过程;负离子的脱负或正离子碰撞阴极的过程,及亚稳态粒子的去激励作用给击穿提供了有效初始电子。     

激光大气击穿阈值的数值分析

 针对大气中飞行器的等离子体隐身问题,数值计算了ns量级强激光击穿大气的阈值,讨论了一些相关条件对阈值的影响。结果表明：对于ns量级的入射激光,波长越长,大气的击穿阈值越小;气压越大,击穿阈值也越小;气体中存在的初始电子对不易产生光电离的长波长入射激光的击穿阈值,有明显的减少作用,但对短波长入射激光的击穿阈值几乎没有影响;脉宽越宽,激光辐照的时间越长,大气击穿的阈值越小。