A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI.At a low k value the electric field strength in the dielectric buried layer (E I) is enhanced and a Si window makes the substrate share the vertical drop,resulting in a high vertical breakdown voltage;in the lateral direction,a high electric field peak is introduced at the Si window,which modulates the electric field distribution in the SOI layer;consequently,a high breakdown voltage (BV) is obtained.The values of EI and BV of LK PSOI with kI=2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%,respectively,compared with those of the conventional PSOI.Furthermore,the Si window also alleviates the self-heating effect.     

A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.     

Ni27+ 离子Kα和Kβ 型衰变的双电子复合速率系数的计算

用HFR波函数对低密度类氢Ni²⁷⁺等离子体与电子相互作用的KLn和KMn共振激发的双电子复合过程进行了细致的理论计算研究.根据可能的重要辐射衰变通道，分析了Ni²⁷⁺等离子体Kα 型和Kβ 型辐射衰变的双电子复合速率系数随旁观电子主量子数n和轨道角动量量子数l与电子温度的变化行为，计算了Ni²⁷⁺等离子体双电子复合过程的总速率系数.研究结果表明，在低密度条件下，Kα 型和Kβ型辐射衰变的分支双电子复合速率系数与旁观电子主量子数n和轨道角动量量子数l有重要关系，前者的分支速率系数远大于后者. 关键词： 27+离子')" href="#">Ni²⁷⁺离子 Kα型和Kβ型辐射衰变')" href="#">Kα型和Kβ型辐射衰变 双电子复合 速率系数     

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench(HK TG VDMOS) is proposed in this paper.The HK TG VDMOS features a high-k(HK) trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage(BV).Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction(SJ) vertical double-diffused metal-oxide semiconductor(VDMOS),the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS(TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-kappa gate dielectric

By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-kappa gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-kappa dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

超短脉冲强激光与固体靶相互作用中Kα射线的实验研究

在相对论激光强度下，对p偏振30 fs激光与固体Cu靶相互作用中产生的Kα射线进行了实验研究.采用刀边成像技术和单光子计数X射线CCD相结合的探测装置，在单发激光脉冲打靶时同时得到X射线源的尺寸、能谱以及Kα光子的转换效率等多种信息.实验结果与Reich等人的理论计算结果有明显的差异，Kα光子的能量转换效率在激光功率密度为1.6×10¹⁸W/cm²的条件下达到最大值7.08×10^-6/sr.根据这一结果并结合蒙特卡罗程序，推断出在这一聚焦光强下激光能量转换为前向超热电子的效率约为10%.     

高k介质电导增强SOI LDMOS机理与优化设计

本文提出一种高k介质电导增强SOI LDMOS新结构（HK CE SOI LDMOS）,并研究其机理. HK CE SOI LDMOS的特征是在漂移区两侧引入高k介质,反向阻断时,高k介质对漂移区进行自适应辅助耗尽,实现漂移区三维RESURF效应并调制电场,因而提高器件耐压和漂移区浓度并降低导通电阻. 借助三维仿真研究耐压、比导通电阻与器件结构参数之间的关系. 结果表明,HK CE SOI LDMOS与常规超结SOI LDMOS相比,耐压提高16%–18%,同时比导通电阻降低13%–20%,且缓解了由衬底辅助耗尽效应带来的电荷非平衡问题. 关键词： k介质')" href="#">高k介质 绝缘体上硅 (SOI) 击穿电压 比导通电阻     

超短超强激光与铜靶相互作用产生Kα源的蒙特卡罗模拟

超短超强激光打靶产生的超热电子，与固体靶相互作用时会产生Kα线辐射.由经典定标律给出了法线方向超热电子的温度.利用蒙特卡罗方法，对超热电子在固体靶中的传输进行了研究，模拟了不同靶厚度情况下Kα产额和角分布及不同电子温度下Kα光子的转化效率.计算结果与实验符合较好.结果表明：在一定电子温度下，随着靶厚度的增加Kα光子产额会达到饱和，并会使Kα光子发射的各向异性变得更加严重；存在最佳的电子温度，使Kα线转化效率最高. 关键词： 超短超强激光 超热电子 蒙特卡罗方法 Kα线')" href="#">Kα线     

Criticality of K-contact vector fields

We prove that the characteristic vector field of a contact metric structure determines a contact invariant embedding or a J-holomorphic map into the tangent unit sphere bundle if and only if the contact form is K-contact. As a consequence, K-contact vector fields are minimal and harmonic sections.     

变系数非线性发展方程的G'/G展开解

用近年来提出的(G'/G)展开法首次尝试了对变系数非线性发展方程的求解, 并以两类变系数非线性KdV方程为例,且成功得到了新的精确解. 实践证明: (G'/G)展开法不仅适用于常系数非线性发展方程, 而且还很好地适用于变系数非线性方程,具有广泛的应用前景.     

Theoretical study on K, L, and M X-ray transition energies and rates of neptunium and its ions

The transition energies and electric dipole （El） transition rates of the K, L, and M lines in neutral Np have been theoretically determined from the MultiConfiguration Dirac-Fock （MCDF） method. In the calculations, the contributions from Breit interaction and quantum electrodynamics （QED） effects （vacuum polarization and self-energy）, as well as nu- clear finite mass and volume effects, are taken into account. The calculated transition energies and rates are found to be in good agreement with other experimental and theoretical results. The accuracy of the results is estimated and discussed. Furthermore, we calculated the transition energies of the same lines radiating from the decaying transitions of the K-, L-, and M-shell hole states of Np ions with the charge states Np1＋ to Np6＋ for the first time. We found that for a specific line, the corresponding transition energies relating to all the Np ions are almost the same; it means the outermost electrons have a very small influence on the inner-shell transition processes.     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

“强光一号”Al丝阵Z箍缩产生K层辐射实验研究

在“强光一号”加速器开展了Al丝阵Z箍缩产生K层辐射的实验研究,固定Al丝线径20 μm、丝阵直径12 mm,丝根数为8和12的负载获得K层产额分别为0.9 kJ/cm和1.1 kJ/cm,明显高于16和24根丝负载.辐射功率波形和时间分辨的X射线图像显示,低丝数负载存在拖尾质量引起的多次内爆现象.在60%—80%的内爆时间内,丝阵几乎停留在初始位置;主体内爆在随后的25—30 ns内完成,将部分等离子体留在初始位置,形成质量的拖尾分布;内爆后期驱动电流向外围的拖尾质量迁移,引 关键词： Al丝阵 Z箍缩 K层辐射')" href="#">K层辐射 拖尾质量     

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.     

The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with Al2O3 as the gate dielectric

A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.     

Flat-band voltage shift in metal-gate/high-k/Si stacks

In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.     

A specific state variable for a class of 3D continuous fractional-order chaotic systems

A specific state variable in a class of 3D continuous fractional-order chaotic systems is presented.All state variables of fractional-order chaotic systems of this class can be obtained via a specific state variable and its (q-order and 2q-order) time derivatives.This idea is demonstrated by using several well-known fractional-order chaotic systems.Finally,a synchronization scheme is investigated for this fractional-order chaotic system via a specific state variable and its (q-order and 2q-order) time derivatives.Some examples are used to illustrate the effectiveness of the proposed synchronization method.     

The problems with M

M² is now widely used to characterize the quality of laser radiation. In the paraxial approach the inequality M²1 holds, if M² is defined by the second moments. Nevertheless, in some publications M²<1 is presented, either theoretically or experimentally (Wang et al., Optik 1995;100(1):8; Lu et al., Optik 1995;100(2):91; Wang et al., Optics and Laser Technology 1999;31:151). In particular, it is stated that for a superposition of axially shifted Gaussian spherical beams, M² can become smaller than one (Wang et al., Optics and Laser Technology 1999;31:151). These problems with M² are briefly summarized.     

A novel （G＇/G）-expansion method and its application to the Boussinesq equation

In this article, a novel （G＇/G）-expansion method is proposed to search for the traveling wave solutions of nonlinear evolution equations. We construct abundant traveling wave solutions involving parameters to the Boussinesq equation by means of the suggested method. The performance of the method is reliable and useful, and gives more general exact solutions than the existing methods. The new （G＇/G）-expansion method provides not only more general forms of solutions but also cuspon, peakon, soliton, and periodic waves.