电子自旋偏振度及其弛豫过程的飞秒激光吸收光谱研究

基于二能级体系的速率方程，获得了非完全初始自旋偏振极化条件下的自旋偏振向上和向下 载流子布居弛豫的解析解. 基于小信号近似，给出了左、右旋圆偏振探测光的饱和吸收变化 的表达式. 此表达式中含有电子布居的初始自旋偏振度参数，因而用此表达式拟合实验数据 能够直接获取电子布居的初始自旋偏振度，而电子布居的初始自旋偏振度在自旋偏振输运研 究中是一个非常重要的关键参数. 实验获得了GaAs/AlGaAs多量子阱结构中光注入电子布居 的初始自旋偏振度及其弛豫时间常数. 关键词： 圆偏振抽运_探测技术 电子自旋偏振度 自旋偏振弛豫 GaAs量子阱     

半导体量子阱中电子自旋弛豫和动量弛豫

根据电子自旋轨道耦合对自旋极化弛豫影响的DP机理进一步导出了半导体中电子自旋弛豫与动量弛豫及载流子浓度的关系，并采用飞秒抽运探测技术在室温下测量AlGaAs/GaAs 多量子阱中载流子浓度在 1×10¹⁷—1×10¹⁸cm^-3范围内，电子自旋弛豫时间由58ps增加至82 ps的变化情况，与理论计算值符合，说明了随着载流子浓度的增加，载流子间的频繁散射加速了电子动量驰豫，减弱了电子自旋轨道耦合作用，从而延长了电子自旋寿命. 关键词： 电子自旋轨道耦合 电子自旋弛豫和动量弛豫 飞秒光谱技术     

时间分辨ESR与电子自旋极化研究

介绍了近年发展起来的时间分辨TRESR技术，以3个实例介绍了用TRESR研究光解自由基的电子自旋极化的状况，指出研究自旋极化可以得到关于分子激发态和自由基反应动力学等丰富的多方面信息，TRESR技术是研究光与分子相互作用的一种重要手段。     

电子自旋弛豫时间测量中电子自旋扩散的影响

在光注入电子自旋包的不同位置进行时间分辨的泵浦-探测实验时,发现电子自旋信息的退化率不同.揭示了电子自旋扩散对准确测量电子自旋弛豫时间的影响,获得了自旋输运动力学方程的解.对该解进行研究发现,电子自旋扩散对电子自旋弛豫时间测量值的影响可以归结为两个含时间的因子,其中一个因子与泵浦光斑中心和探测光斑中心的距离有关,另一个因子与泵浦光斑尺寸有关.提出了自旋弛豫时间测量实验中消除扩散影响的条件:1)泵浦光斑和探测光斑中心重叠;2)泵浦光斑尺寸足够大.结果表明,泵浦光斑尺寸越大,探测光斑中心越接近于泵浦光斑的中心,则扩散对自旋弛豫时间测量值所造成的影响就越小.     

二维量子点中极化子的自旋弛豫

在考虑Rashba自旋-轨道耦合的条件下, 采用二次幺正变换和变分方法研究了二维抛物量子点中由于电子与体纵光学声子的耦合作用形成的极化子在基态Zeeman分裂能级上的自旋弛豫过程.这一过程主要是通过吸收或发射一个形变势或压电声学声子完成.具体分析了强、弱耦合两种极限下极化子自旋弛豫率与外磁场、量子点半径、Landau因子参数、Rashba自旋轨道耦合参数的变化关系. 关键词： 自旋弛豫 极化子 Rashba自旋轨道耦合 量子点     

(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响

我们实验研究了(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响。通过测量量子阱的荧光寿命和光学吸收计算,我们能得到不同泵浦光功率下的带间吸收所产生的空穴浓度;相对应地,通过双色磁光科尔旋转技术,我们测量了该GaAs量子阱中电子自旋的动力学过程。结合两者,我们得到了电子自旋弛豫速率与空穴浓度的关系。实验结果表明电子自旋弛豫速率与空穴浓度呈线性依赖关系,验证了BirAronov-Pikus机制主导该体系的电子自旋弛豫。     

InAs量子点中自旋-轨道相互作用下电子自旋弛豫的参量特征

本文在处理InAs单电子量子点哈密顿模型时,将自旋-轨道(SO)相互作用作为微扰项,计算在Fock-Darwin本征函数下SO相互作用的矩阵元,利用其对能级和波函数的二阶修正,并且考虑新的能级对g因子和有效质量m^*的影响,计算得到在声子协助下电子的自旋弛豫率Γ的表达式.给出了InAs量子点中声子协助的电子自旋弛豫率Γ对于限制势频率ω₀、温度T、纵向高度z_{0关键词： 自旋弛豫率 自旋-轨道(SO)相互作用 InAs量子点 Fock-Darwin本征函数}     

MOCVD生长的InGaN薄膜中InN分凝的研究

利用X射线衍射(XRD)技术测量了MOCVD生长的InGaN薄膜中的InN分凝量.利用Vegard定理和XRD 2θ扫描测得实验的InGaN薄膜的In组分为0.1～0.34.通过测量XRD摇摆曲线的InN(0002)和InGaN(0002)的积分强度之比测得InN在InGaN中的含量为0.0684%～2.6396%.根据XRD理论,计算出InN和InGaN的理论衍射强度.InN含量在所有样品中均小于3%,这表明样品的相分离度比较低.还发现InN在InGaN薄膜中的含量与氮气载气流量和反应室气压明显相关.     

量子阱中电子自旋注入及弛豫的飞秒光谱研究

采用飞秒脉冲的饱和吸收光谱方法研究了GaAs/AlGaAs多量子阱中电子自旋的注入和 弛豫特性，测得电子自旋极化弛豫时间为80±10ps.说明了电子自旋 轨道耦合相互作用引 起局域磁场的随机化，是导致电子的自旋极化弛豫的主要机理. 关键词： 自旋电子学 半导体量子阱 飞秒激光光谱 自旋 轨道耦合     

Determination of T1-spin-lattice relaxation time in a two-level system by continuous wave multiquantum electron paramagnetic resonance spectroscopy in a presence of tetrachromatic microwave irradiation

Applicability of continuous wave multiquantum EPR methods to study relaxation times at X-band is examined. Multiquantum transitions excited in a two-level system by tetrachromatic irradiation are used for these studies. The Bloch equation model is applied to simulate lineshapes of the three quantum transitions as a function of frequency difference between exciting fields. The dependence of multiquantum transition signals on relaxation times and microwave amplitude is shown. On this basis a method of deducing relaxation times from these signals is formulated. The case of a homogeneously and inhomogeneously broadened resonance line is considered. Two experimental methods are used to verify the proposed hypothesis: the X-band continuous wave multiquantum EPR with four frequencies microwave field and saturation recovery EPR. The values of T₁ obtained from CW MQ EPR and SR EPR are compared.     

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

We have studied the photoluminescence and time-resolved photoluminescence of a set of InGaN quantum wells with well thickness from 1 to 7.5 nm. An analysis of the phonon satellites at 5 K shows Huang–Rhys factors from 0.32 to 0.44. The increase of this factor is caused by the electron–hole separation induced by the piezoelectric field. The time-resolved photoluminescence at room temperature shows that the decay time of the 1 and 2 nm wells does not depend on the wavelength. The maximum decay time is around 600 ps for the 2, 3 and 4 nm wells. However, for the 3 and 4 nm wells a decrease of the photoluminescence decay time is observed at the highest wavelengths. This suggest the onset of a non-radiative process in these samples. The optimum well width for efficient emission for these single quantum wells was found to be 2 nm.     

Dead-time free measurement of dipole-dipole interactions between electron spins

A four-pulse version of the pulse double electron-electron resonance (DEER) experiment is presented, which is designed for the determination of interradical distances on a nanoscopic length-scale. With the new pulse sequence electron-electron couplings can be studied without dead-time artifacts, so that even broad distributions of electron-electron distances can be characterized. A version of the experiment that uses a pulse train in the detection period exhibits improved signal-to-noise ratio. Tests on two nitroxide biradicals with known length indicate that the accessible range of distances extends from about 1.5 to 8 nm. The four-pulse DEER spectra of an ionic spin probe in an ionomer exhibit features due to probe molecules situated both on the same and on different ion clusters. The former feature provides information on the cluster size and is inaccessible with previous methods.     

Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures

To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS) scattering,polar optical phonon(POP) scattering,piezoelectric field(PE) scattering,interface roughness(IFR) scattering,deformation potential(DP) scattering,alloy disorder(ADO) scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH) is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2 DEG) density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.0)4 N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.     

Photo-induced intramolecular electron transfer and intramolecular vibrational relaxation of rhodamine 6G in DMSO revealed by multiplex transient grating spectroscopy

Photo-induced intramolecular electron transfer （PIET） and intramolecular vibrational relaxation （IVR） dynamics of the excited state of rhodamine 6G （Rh6G＋） in DMSO are investigated by multiplex transient grating. Two major compo- nents are resolved in the dynamics of Rh6G＋. The first component, with a lifetime τTPIET = 140 fs-260 fs, is attributed to PIET from the phenyl ring to the xanthene plane. The IVR process occurring in the range ZIVR = 3.3 ps-5.2 ps is much slower than the first component. The PIET and IVR processes occurring in the excited state of Rh6G＋ are quantitatively determined, and a better understanding of the relationship between these processes is obtained.     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Spin concentration in a possible ESR dosimeter: An electron spin echo study on X-irradiated ammonium tartrate

Several single crystals and powder samples of ammonium tartrate, recently proposed as a possible ESR dosimeter, have been X-irradiated with different doses. The total radical concentration has been determined by quantitative cw ESR, by comparison with a standard. The samples have been studied by electron spin echo spectroscopy. The two-pulse echo decay has been obtained and simulated by a single exponential function for different values of the microwave power of the pulses and for different pulse lengths. The dependence of the phase memory time TM on the microwave power has been exploited to get information on the contribution of the instantaneous diffusion to spin dephasing. At room temperature in the range of radical concentrations of 10(18)-10(19) spins/cm3 the instantaneous diffusion is the dominant spin dephasing mechanism. The linear dependence of the instantaneous diffusion on the total concentration of the radicals is in agreement with the theory. From the latter result we conclude that the average radical-radical distance corresponds to a random distribution of the radicals in the matrix. A simple method of measuring the radical concentration by the ESE decays in powder samples of irradiated ammonium tartrate is described.     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱