Low-bias negative differential conductance controlled by electrode separation

The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core,denoted as TADHA, is studied by using non-equilibrium Green's function formalism combined with ab initio calculations.The numerical results show that the TADHA molecule exhibits excellent negative differential conductance(NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital(HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance.Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule.     

铁磁-绝缘层-铁磁-d波超导结中的量子干涉效应对微分电导与散粒噪声的影响

通过求解BogoliubovedeGennes(BdG)方程,利用推广的BlonderTinkhamKlapwijk(BTK)理论,计算铁磁绝缘层铁磁d波超导结中的微分电导、平均电流和散粒噪声功率.研究表明,系统的微分电导和散粒噪声与平均电流的比值都随中间铁磁层厚度作周期性振荡,振荡的幅度随绝缘层势垒增高而变大,随铁磁层中磁交换劈裂的增强而变小. 关键词： 微分电导 散粒噪声 磁交换劈裂     

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat（ is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrie the transport processes can be divided into three kinds： the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the currenl voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltag and then a large peak-to-valley current ratio can be obtained.     

Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices

We report microwave and temporal measurements on nonlinear transport in GaInAs/AlInAs superlattice n⁺n⁻n⁺diodes. The superlattices have wide minibands, wider than 80 meV. The microwav experiments are performed for 0–65 GHz. The diodes exhibit reflection gain up to 65 GHz over a bias-dependent Hakki resonance. The temporal experiments use electro-optic sampling to push the measurement range beyond 200 GHz. Harmonics of the fundamental Hakki resonance are observed up to order three at 150 GHz. A simple admittance model for negative differential conductance devices accounts for the results in both experimental approaches. They are in agreement with miniband transport and demonstrate superlattice negative differential conductance far in the millimetre-wave domain.     

Spin-dependent transport through magnetic nanojunctions

Coherent electronic transport through a molecular device is studied using non-equilibrium Green's function (NEGF) formalism. Such device is made of atomic nanowire which is connected to ferromagnetic electrodes. The molecule itself is described with the help of Hubbard model (Coulomb interactions are treated by means of the Hartree-Fock approximation), while the coupling to the electrodes is modeled through the use of a broad-band theory. It was shown that magnetoresistance varies periodically with increasing length of the atomic wire (in the linear response regime) and oscillates with increasing bias voltage (in the nonlinear response regime). Since the TMR effect for analyzed structures is predicted to be large (tens of percent), these junctions seem to be suitable for application as magnetoresistive elements in future electronic circuits.     

The effect of doped ions on single-molecule magnets of the Mn12-Ac family

This paper investigates the single-molecule magnets of pure and Cr/Fe-doped Mn12-Ac. The components of the mixed crystals are identified by AC susceptibility technique. The ground-state spin and anisotropy parameters of doped Mn12-Ac are obtained： （i） MnllCr-Ac （S=19/2, D=0.62K, B=0.0009K, A=63K）, and （ii） Mn11Fe-Ac （S=21/2, D=0.39 K, B=0.001 K, △=55 K）. The single-ion origin of the magnetic anisotropy is discussed.     

Transport through artificial single-molecule magnets: Spin-pair state sequential tunneling and Kondo effects

The transport properties of an artificial single-molecule magnet based on a CdTe quantum dot doped with a single Mn+2 ion(S=5/2) are investigated by the non-equilibrium Green function method.We consider a minimal model where the Mn-hole exchange coupling is strongly anisotropic so that spin-flip is suppressed and the impurity spin S and a hole spin s entering the quantum dot are coupled into spin pair states with(2S+1) sublevels.In the sequential tunneling regime,the differential conductance exhibits(2S+1) possible peaks,corresponding to resonance tunneling via(2S+1) sublevels.At low temperature,Kondo physics dominates transport and(2S+1) Kondo peaks occur in the local density of states and conductance.These peaks originate from the spin-singlet state formed by the holes in the leads and on the dot via higher-order processes and are related to the parallel and antiparallel spin pair states.     

Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction

By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to ${10}^6～{10}^7$, which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.     

Physical mechanism of negative differential conductance in substrateless metallic carbon nanotubes

The existence of pronounced negative differential conductance at room temperature in suspended metallic carbon nanotubes was recently proven. We investigate here the physical nature of this phenomenon, which is of considerable importance for high-frequency devices, such as oscillators working up to few hundreds of GHz. Besides previous explanations, we find a new physical mechanism that explains the negative differential conductivity at room temperature. The entire suspended metallic carbon nanotube behaves as a very large quantum well, the negative differential conductance occurring due to the depletion of carriers on high-energy resonant levels.     

Negative differential conductance and effective electron mass in highly asymmetric ballistic bilayer graphene nanoribbon

We present a simplified theory of the effective momentum mass (EMM) and ballistic current-voltage relationship in a degenerate two-folded highly asymmetric bilayer graphene nanoribbon. With an increase in the gap, the density-of-states in the lower set of subbands increases more than that of the upper set. This results in a phenomenological population inversion of carriers, which is reflected through a net negative differential conductance (NDC). It is found that with the increase of the ribbon width, the NDC also increases. The population inversion also signatures negative values of EMM above a certain ribbon-width for the lower set of subbands, which increases in a step-like manner with the applied longitudinal static bias. The well-known result for symmetric conditions has been obtained as a special case.     

NMR phase noise in bitter magnets

We have studied the temporal instability of a high field resistive Bitter magnet through nuclear magnetic resonance (NMR). This instability leads to transverse spin decoherence in repeated and accumulated NMR experiments as is normally performed during signal averaging. We demonstrate this effect via Hahn echo and Carr--Purcell--Meiboom--Gill (CPMG) transverse relaxation experiments in a 23-T resistive magnet. Quantitative analysis was found to be consistent with separate measurements of the magnetic field frequency fluctuation spectrum, as well as with independent NMR experiments performed in a magnetic field with a controlled instability. Finally, the CPMG sequence with short pulse delays is shown to be successful in recovering the intrinsic spin--spin relaxation even in the presence of magnetic field temporal instability.     

双量子点结构中Majorana费米子的噪声特性

Majorana费米子是其自身的反粒子, 在拓扑量子计算中有着重要的应用. 利用粒子数表象下的量子主方程方法, 研究双量子点与Majorana费米子混合结构的电子输运特性, 特别是散粒噪声. 有无Majorana费米子耦合的电流与散粒噪声存在明显差别: 有Majorana费米子耦合时稳态电流差呈反对称, 噪声谱呈现相干振荡并且低频噪声显著增强. 量子点与Majorana费米子对称弱耦合时, 零频噪声由"峰"变为"谷", 并且"边谷"展宽逐渐减小; 当对称强耦合时, 零频噪声的谷深增加, "边谷"向高频端移动. 改变系统与电极的耦合强度时, 零频噪声由谷变成峰. 因此, 稳态电流结合散粒噪声可以探测双量子点结构中Majorana费米子是否存在.     

Gas-sensor property of single-molecule device:F_2 adsorbing effect

The single thiolated arylethynylene molecule with 9,10-dihydroanthracene core(denoted as TADHA) possesses pronounced negative differential conductance(NDC) behavior at lower bias regime. The adsorption effects of F_2 molecule on the current and NDC behavior of TADHA molecular junctions are studied by applying non-equilibrium Green's formalism combined with density functional theory. The numerical results show that the F_2 molecule adsorbed on the benzene ring of TADHA molecule near the electrode can dramatically suppresses the current of TADHA molecular junction. When the F_2 molecule adsorbed on the conjugated segment of 9,10-dihydroanthracene core of TADHA molecule, an obviously asymmetric effect on the current curves induces the molecular system showing apparent rectifier behavior. However, the current especially the NDC behavior have been significantly enlarged when F_2 addition reacted with triple bond of TADHA molecule.     

正常金属/绝缘层/s波超导隧道结中绝缘层对微分电导的影响

在正常金属／绝缘层／s波超导隧道结（NIS结）中，以方势垒描述绝缘层对准粒子输运的影 响，运用Bogoliubov_de Gennes（BdG）方程、Blonder_Tinkham_Klapwijk(BTK)理论，计算 了NIS隧道结中的准粒子输运系数和微分电导.研究表明,微分电导随绝缘层厚度的变化呈振 荡和衰减两种趋势，其振荡的周期和衰减的快慢均强烈地依赖于绝缘层的势垒值以及V=Δ ₀/e的偏压值，电导峰的高低及峰的位置与绝缘层厚度密切相关，显示了比δ势 描述更为丰富多彩的隧道谱. 关键词： NIS结 方势垒 微分电导     

负微分电导下晶闸管的动力学行为与混沌现象

研究了晶闸管处于负微分电导状态下的非线性动力学行为,推导了晶闸管动力学系统不稳定需满足的边界条件,解释了晶闸管混沌现象产生机理.建立了晶闸管的非线性动力学方程,分析了该动力学方程的线性稳定性.在此基础上根据Jacobi矩阵得到了系统不稳定需满足的边界条件,指出晶闸管的混沌行为并非只由负微分电导特性引起,还与外界条件和器件本身物理参数等因素有关.最后,通过数值仿真和实验研究证实了理论分析的正确性,从而完整地解释了晶闸管的倍周期分岔和混沌行为.     

Ab initio calculation of transport properties in 1,3-diphenylpropynylidene based molecular device

Using an ab initio method based on non-equilibrium Green’s functions (NEGF) combined with density functional theory (DFT), a calculation of the transport properties of a single molecular junction based on 1,3-diphenylpropynylidene (PhC₃Ph) ‘radical-π-radical’ is performed. The obvious negative differential resistance (NDR), spin current polarisation (SCP) and dual-spin current rectification (SCR) effects in this device are obtained. The total current for magnetic parallel configuration (PC) is larger at first and then less than that for magnetic antiparallel configuration (APC) as the bias increases, which suggests the abnormal magnetoresistance (MR) effect and can be used as a molecular switch with two working voltages. The evolution of the spin-polarised transmission spectrums and the frontier molecular orbitals (MOs) with applied bias is used to explain the above interesting results. Our calculations may be helpful for designing multifunctional molecular spintronics devices in the future.     

水分子对碳链的输运性质影响的第一性原理研究

用基于密度泛函理论的非平衡格林函数方法研究了水分子对7个碳原子组成的一维原子链的输运性质的影响.碳原子链放在具有有限截面的Al(100)电极中.研究发现，碳原子链上的水分子的数目和放置的位置的不同将对体系输运性质产生很大的影响.特别是，单个H₂O分子对碳链平衡电导的影响随其摆放位置的不同而出现奇偶振荡，例如，当位于奇数编号的碳原子上时，电导取极大值，当位于偶数编号的碳原子上时，取极小值.将两个H₂O分子置于不同的碳原子正上方时，在不同的位置平衡电导相差很大，在某些特殊的情况下原本受到抑止的第三个本征通道也有较大的贡献.此外，还研究了放置两个水分子时，体系的电流-电压(I-V)特性，随着水分子的数目和放置的位置不同，某些情况可能出现较大幅度的负微分电阻，而在另一些情况下却没有出现. 关键词： 平衡电导 透射谱 负微分电阻     

Spin-dependent transport induced by magnetization in zigzag graphene nanoribbons coupled to one-dimensional leads

We study spin transport in a zigzag graphene nanoribbon sample with two ferromagnetic strips deposited on the two sides of the ribbon. A tight-binding Hamiltonian was adopted to describe the sample connected to two one-dimensional leads. Our theoretical study shows that the resonance peaks of conductance for the spin-up and spin-down electrons are separated for the parallel configuration of the ferromagnetic strips, while they are not separated for the case of antiparallel configuration. This means that giant magnetoresistance can be produced at particular energies by altering the configurations of the ferromagnetic strips, and the device can be designed as a spin filter.     

Spin-dependent transport induced by magnetization in zigzag graphene nanoribbons coupled to one-dimensional leads

We study spin transport in a zigzag graphene nanoribbon sample with two ferromagnetic strips deposited on the two sides of the ribbon.A tight-binding Hamiltonian was adopted to describe the sample connected to two onedimensional leads.Our theoretical study shows that the resonance peaks of conductance for the spin-up and spin-down electrons are separated for the parallel configuration of the ferromagnetic strips,while they are not separated for the case of antiparallel configuration.This means that giant magnetoresistance can be produced at particular energies by altering the configurations of the ferromagnetic strips,and the device can be designed as a spin filter.     

准弹道输运纳米MOSFET散粒噪声的抑制研究

目前研究准弹道输运纳米MOSFET散粒噪声的抑制时, 采取了完全不考虑其抑制, 或只强调抑制的存在而并未给出抑制公式的方式进行研究. 本文基于Navid模型推导了准弹道输运纳米MOSFET散粒噪声, 并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子. 在此基础上, 对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究. 两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合, 从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.