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1.
通过自洽求解薛定谔方程和泊松方程,较系统地研究了GaN沟道层、AlGaN背势垒层、Si掺杂和AlN插入层对N极性GaN/AlGaN异质结中二维电子气(2DEG)的影响,分析表明,GaN沟道层厚度、AlGaN背势垒层厚度及Al组分变大都能一定程度上提高二维电子气面密度,AlGaN背势垒层的厚度和Al组分变大也可提高二维电子气限阈性,且不同的Si掺杂形式对二维电子气的影响也有差异,而AlN插入层在提高器件二维电子气面密度、限阈性等方面表现都较为突出,在模拟中GaN沟道层厚度小于5nm时无法形成二维电子气,超过20nm后二维电子气面密度趋于饱和,而AlGaN背势垒厚度超过40nm后二维电子气也有饱和趋势,对均匀掺杂和delta掺杂而言AlGaN背势垒层Si掺杂浓度超过5×10~(19)cm~(-3)后2DEG面密度开始饱和,而厚度为2nmAlN插入层的引入会使2DEG面密度从无AlN插入层时的0.93×10~(13)cm~(-2)提高到1.17×10~(13)cm~(-2)。 相似文献
2.
研究了在GaN缓冲层中插入40 nm厚高温AlN层的GaN外延层和AlGaN/GaN异质结材料, AlN插入层可以增加GaN层的面内压应力并提高AlGaN/GaN高电子迁移率晶体管(HEMTs)的电学特性. 在精确测量布拉格衍射角的基础上定量计算了压应力的大小. 增加的压应力一方面通过增强GaN层的压电极化电场, 提高了AlGaN/GaN异质结二维电子气(2DEG)面密度, 另一方面使AlGaN势垒层对2DEG面密度产生的两方面影响相互抵消. 同时, 这种AlN插入层的采用降低了GaN与AlGaN层之间的
关键词:
高温AlN插入层
AlGaN/GaN异质结
二维电子气
应力 相似文献
3.
Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer 下载免费PDF全文
In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. 相似文献
4.
Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures 下载免费PDF全文
It was reported by Shen et al that the
two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high
density and improved mobility compared with an AlGaN/GaN structure, but the
potential of the AlGaN/AlN/GaN structure needs further exploration. By the
self-consistent solving of one-dimensional Schr\"{o}dinger--Poisson
equations, theoretical investigation is carried out about the effects of
donor density (0--1\times 1019cm-3 and temperature
(50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN
structures. It is found that in the former structure, since the effective
\Delta Ec is larger, the efficiency with which the 2DEG absorbs the
electrons originating
from donor ionization is higher, the resistance to parallel conduction is
stronger, and the deterioration of 2DEG mobility is slower as the donor
density rises. When temperature rises, the three-dimensional properties of
the whole electron system become prominent for both of the structures, but the
stability of 2DEG is higher in the former structure, which is also ascribed
to the larger effective \Delta Ec. The Capacitance--Voltage
(C-V) carrier density
profiles at different temperatures are measured for two Schottky diodes on
the considered heterostructure samples separately, showing obviously
different 2DEG densities. And the temperature-dependent tendency of the
experimental curves agrees well with our calculations. 相似文献
5.
Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 下载免费PDF全文
We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (213EG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases. 相似文献
6.
Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density. 相似文献
7.
8.
Breakdown voltage analysis of Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer 下载免费PDF全文
In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. 相似文献
9.
Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure 下载免费PDF全文
Deep level transient spectroscopy(DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors(HEMTs) has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v + 0.47 eV,and E_v + 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. 相似文献
10.
在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻.
关键词:
AlGaN/GaN 结构
AlN/GaN超晶格
二维电子气
高电子迁移率晶体管 相似文献
11.
Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures 下载免费PDF全文
This paper finds that the two-dimensional electron gas density in
high Al-content AlGaN/GaN heterostructures exhibits an obvious
time-dependent degradation after the epitaxial growth. The
degradation mechanism was investigated in depth using Hall effect
measurements, high resolution x-ray diffraction, scanning electron
microscopy, x-ray photoelectron spectroscopy and energy dispersive
x-ray spectroscopy. The results reveal that the formation of surface
oxide is the main reason for the degradation, and the surface
oxidation always occurs within the surface hexagonal defects for
high Al-content AlGaN/GaN heterostructures. 相似文献
12.
AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 1015 cm-2. The dc characteristics of the devices, such as the drain saturation current and the maximum transconductance, decreased after neutron irradiation. The gate leakage currents increased obviously after neutron irradiation. However, the rf characteristics, such as the cut-off frequency and the maximum frequency, were hardly affected by neutron irradiation. The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism. It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas (2DEG) decreased after neutron irradiation. There was no evidence of the full-width at half-maximum of X-ray diffraction (XRD) rocking curve changing after irradiation, so the dislocation was not influenced by neutron irradiation. It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices. 相似文献
13.
《Current Applied Physics》2015,15(11):1478-1481
The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (ns) of a two-dimensional electron gas has decreased significantly from 4.66 × 1012 cm−2 to 2.15 × 1012 cm−2 upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (ns) of a reference structure and the reduced ns caused by the Au gate metal are approximately 5.66 × 1012 cm−2 and 1.08 × 1012 cm−2, respectively. 相似文献
14.
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 下载免费PDF全文
The parasitic source resistance(RS) of Al Ga N/Al N/Ga N heterostructure field-effect transistors(HFETs) is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage(C–V) and current–voltage(I–V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field(PCF) scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the Al Ga N/Al N/Ga N HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS. 相似文献
15.
The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures 下载免费PDF全文
To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer. 相似文献
16.
We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas(2DEG)in AlGaN/GaN high electron mobility transistors(HEMTs).By introducing a drifted Fermi–Dirac distribution,we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation.Then,the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature.Under random phase approximation(RPA),the electric field driven plasmon dispersion is investigated.The calculated results indicate that the plasmon frequency is dominated by both the electric field and the angle between wavevector and electric field.Importantly,the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage(change of the electron density). 相似文献
17.
High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors 下载免费PDF全文
AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current IDsat, maximal transconductance gm, and the positive shift of threshold voltage VTH at high drain-source voltage VDS. The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with VDS=20 V and VGS=0 V applied to the device for 104 sec, the SiN passivation decreases the stress-induced degradation of IDsat from
36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of IDsat, which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. 相似文献
18.
The transport of the two-dimensional electron gas formed at an AlGaN/GaN heterostructure in the presence of strain polarization fields is investigated. For this purpose, we develop a deterministic multigroup model to the Boltzmann transport equations. The envelope wave functions for the confined electrons are calculated using a self-consistent Poisson–Schrödinger solver. The electron gas degeneracy and hot phonons are included in our transport equations. Numerical results are given for the dependence of macroscopic quantities on the electric field strength and on time and for the electron and phonon distribution functions. We compare our results to those of Monte Carlo simulations and with experiments. 相似文献
19.