Nanoscratch behavior of Zn1−xCdxSe heteroepitaxial layers

This paper describes the nanoscratch behavior of Zn_1−xCd_xSe epilayers grown using molecular beam epitaxy (MBE). Transmission electron microscopy (TEM), scanning electron microscopy (SEM), and Hysitron Triboscope nanoindenter techniques were employed to determine the microstructures, morphologies, friction coefficients (μ), and hardnesses (H) of these materials, and thereby propose an explanation for their properties in terms of nanotribological behavior. Nanoscratch analysis revealed that the coefficient of friction of the Zn_1−xCd_xSe epilayer system decreased from 0.172 to 0.139 upon increasing the Cd content (x) from 0.07 to 0.34. Furthermore, studies of the scratch wear depth under a ramping load indicated that a higher Cd content provided the Zn_1−xCd_xSe epilayers with a higher shear resistance, which enhanced the strength of the CdSe bonds. These findings suggest that the greater stiffness of the CdSe bond, relative to that of the ZnSe bond, enhances the hardness of the epilayers. Indeed, the effect of the Cd content on the growth of the Zn_1−xCd_xSe epilayers is manifested in the resulting nanotribological behavior.     

Nanoscratch study of Zn1−xMnxO heteroepitaxial layers

We investigated the nanotribological properties of Zn_1−xMn_xO epilayers (0 ≤ x ≤ 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (μ) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques.The nanoscratch system gave the μ value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200 nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn_1−xMn_xO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn_1−xMn_xO epilayers can be identified by their nanotribological behavior.     

AlGaAs/InGaAs/GaAs赝配高电子迁移晶体管的kink效应研究

利用二维器件模拟软件MEDICI对AlGaAs/InGaAs/GaAs赝配高电子迁移晶体管器(PHEMT)件进行了仿真，研究了PHEMT器件的掺杂浓度与电子浓度分布，PHEMT器件内部的电流走向及传输特性，重点研究了不同温度和不同势垒层浓度情况下PHEMT器件的kink效应.研究结果表明：kink效应主要与处于高层深能级中的陷阱俘获/反俘获过程有关，而不是只与碰撞电离有关. 关键词： 高电子迁移率晶体管 kink效应 二维电子气     

Experimental study on parameters of dust plasma in SiH4/C2H4/Ar discharges

Measurements of dust plasma parameters were carried out in the discharges of （SiH4/C2H4/Ar） mixtures. Dust particles were formed in the capacitively coupled radio-frequency discharge of these reactive mixtures in a cylindrical chamber. Langmuir probe was employed for diagnosing and measuring the important plasma parameters such as electron density and electron temperature. The results showed that the electron density dropped, and in contrast the electron temperature rose when the dust particles formed. The curves of the electron density and temperature versus the RF power and pressure were presented and analysed. Further, it was found that the wriations of electron temperature and the size of dust void with the RF power followed the similar trends. These trends might be useful for understanding more about the characteristics of dusty voids.     

Thermal stability of W2B and W2B5 contacts on ZnO

Rectifying contact formation on n-type bulk single crystal ZnO using novel W₂B or W₂B₅ metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions due to outdiffusion of Zn through the metal. By sharp contrast, when a bilayer of Pt/Au was used on top of the boride layers, rectifying contacts with barrier heights of ∼0.4 eV for W₂B were obtained. The highest barrier height of 0.66 eV was achieved for W₂B₅ annealed at 600 °C, although at this condition the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization.     

Fabrication and annealing effects of SnO2/SiOx nanocables sheathed by the sputtering technique

We reported an approach, in which we have produced the nano-sized crystalline tin oxide (SnO₂) particles with rutile structure. SnO₂ nanowires were coated with a shell layer of SiO_x via a sputtering method. Transmission electron microscopy and elemental mapping investigations revealed that the nanostructures consisted of a crystalline SnO₂ core surrounded by an amorphous SiO_x sheath. The annealing effects on the core-shell nanowires were investigated, revealing that the outer surface became rougher by the thermal annealing. For core-shell nanowires, a room-temperature PL measurement with a Gaussian fitting showed yellow, blue, and violet light emission bands, with the relative intensity of the yellow band showing an increase after thermal annealing. Possible PL emission mechanisms are discussed. This study reveals that the sputtering is effective for preparing the shell layers of nanocables.     

Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

The variation of the electronic parameters in the subband as a function of the In_yGa_1−yAs quantum well width in modulation-doped strained Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were investigated by means of Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements. The fast Fourier transform (FFT) of the S-dH oscillations and the Hall-effect data showed that the carrier density and the mobility of the two-dimensional electron gas (2DEG) occupied in the subband increased as the quantum well width increased. The increase in the 2DEG density with increasing the In_yGa_1−yAs well width originated from an increase in the energy difference between the energy level of the electronic subband and Fermi energy, and the increase in the 2DEG mobility is attributed to a decrease of the scattering source. The electronic subband energies, the corresponding wavefunctions, and the Fermi energies in the Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were calculated by a self-consistent method taking into account the exchange-correlation effect together with the strain and nonparabolicity effects. These results indicate that the electronic parameters in Al_xGa_1−xAs/In_yGa_1−yAs/GaAs strained single quantum wells are significantly dependent on the quantum well width.     

Tunable wavelength light emission from longitudinally biased p-GaAs/n-Ga1−xAlxAs junction containing GaAs quantum wells: non-linear dynamics

We report on the operation and non-linear dynamics of a hot electron device that emits light with wavelength tunablity. The device consists of p-GaAs/n-Ga_1−xAl_xAs heterojunction containing an inversion layer on the p-side, and GaAs quantum wells on the n-side. It is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure – Type 2). The device utilises hot electron longitudinal transport and the light emission is independent of the polarity of applied voltage. The wavelength of the emitted light can be tuned with applied bias from 1.50 to 1.61 eV. The operation of the device requires only two diffused in point contacts. Theoretical modelling of the device operation has been carried out and compared with the experimental results.     

Ion-induced kinetic electron emission from 6LiF,7LiF and MgF2 thin films

<正>Secondary electron yields for Ar~+ impact on ~6LiF,~7LiF and MgF_2 thin films grown on aluminum substrates are measured each as a function of target temperature and projectile energy.Remarkably different behaviours of the electron yields for LiF and MgF_2 films are observed in a temperature range from 25℃to 300℃.The electron yield of LiF is found to sharply increase with target temperature and to be saturated at about 175℃.But the target temperature has no effect on the electron yield of MgF_2.It is also found that for the ion energies greater than 4 keV,the electron yield of ~6LiF is consistently high as compared with that of ~7LiF that may be due to the enhanced contribution of recoiling ~6Li atoms to the secondary electron generation.A comparison between the electron yields of MgF_2 and LiF reveales that above a certain ion energy the electron yield of MgF_2 is considerably low as compared with that of LiF.We suggest that the short inelastic mean free path of electrons in MgF_2 can be one of the reasons for its low electron yield.     

Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (0 0 1) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 Å, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [1 1 0] and directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.     

Photocurrent in superconducting YBa2Cu3O7−x films induced by an infrared free electron laser

Since the discovery of high-temperature cuprate superconductors, there has been much intensive study about the mechanism of them. However, identifying the dynamical mechanism behind them remains one of the great challenges in condensed matter physics. We investigated the high-temperature YBa₂Cu₃O_7−x superconducting films by using a free electron laser (FEL). The method is a type of photoelectron spectroscopy called a free electron laser internal photoemission. The spectrum of the photocurrent induced by FEL was measured in the case of 15 K and 100 K. We estimated the superconductive gap energy of YBa₂Cu₃O_7−x by comparing the photocurrent spectrum of the superconductive state with that of non-superconductive state.     

Charge ordering modulations in Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

Low temperature sample stage in transmission electron microscope is used to investigate the charge ordering behaviours in Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using selected-area electron diffraction (SAED) technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy (HRTEM) images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface from those in the region a little far from the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface, and the possible reasons are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

Multiple ionization of argon accompanied by electron loss and capture of 0.22-6.35 MeV C^q＋ ions

In this paper a projectile ions recoil ions coincidence technique is employed to investigate the target ionization and projectile charge state changing processes in the collision of 0.22-6.35 MeV Cq^＋ （q = 1 - 4） ions with argon atoms. The partial cross section ratios of the double, triple, quadruplicate ionization to the single ionization （or the single capture） of argon associated with single electron loss （or single electron capture） by the projectile are measured and compared with the previous experimental results. In the present experiment, it is observed that the ratios of ionization cross sections R associated with single loss and single capture depend strongly on the projectile charge state and vary significantly with different reaction channels as impact energy increases. In addition, this paper gets empirical scaling laws for the ionization cross section ratios R corresponding to the projectile single loss and finds that the ratios of the double ionization to the single ionization associated with single electron capture remain constant in the present energy range.     

Production of recoil ions He^i＋ accompanied by single electron loss of 0.2-7 MeV C^q＋ and 0.25-5 MeV O^q＋ （q = 1- 4） ions

Target ionization accompanied with projectile electron loss is investigated for 0.2-7 MeV C^q＋ （q = 1 - 4） with He and 0.25-5 MeV O^q＋ （q = 1 - 4） with He collisions. For projectile single-electron loss channel, the He double-to-single ionization ratio R is nearly independent of projectile charge state but dependent on the nuclear charge of projectile Zp. The results are analysed with atomic structure qualitatively. So far there have not existed the experimental data comparable with our results, to our knowledge. The ratio R is interpreted in terms of the two-step mechanism. This analysis agrees well with similar experiments in the literature.     

解说低能量/光电子显微镜（LEEM/PEEM）

文章介绍近年来倍受关注的低能量/光电子显微镜(LEEM/PEEM)的基本原理和应用.LEEM/PEEM拥有成像、光电子能谱和衍射功能,可对样品进行综合全面的分析.通过一系列的应用实例,特别是和同步辐射软X射线结合的成果,展示该实验手段在表面科学和纳米技术方面的应用.     

In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的 关键词： 二维电子气 正磁电阻 子带散射     

电子与类铍N3+和O4+离子碰撞激发截面的相对论扭曲波计算

采用全相对论扭曲波方法,系统地计算了类铍N³⁺和 O⁴⁺离子从基态到2s2p和2p² 的各激发态以及从亚稳态到2p²各激发态的电子碰撞激发截面,详细地讨论了靶态的关联效应对激发截面的影响.结果表明：对于2s-2p的单电子激发,在低能碰撞时,靶态的电子关联效应起非常重要的作用,且使得激发截面降低;而高能碰撞时,靶态波函数的描述对连续态波函数的影响比较小,对激发截面影响也比较小.对于2s²-2p²的双电子激发,其中基态2s²¹S₀到J=0的2p²³P₀,¹S₀的激发截面较大,其主要原因是末离子态波函数与基组态波函数的混合,但是其他几个激发的激发截面较小. 关键词： 全相对论扭曲波方法 电子碰撞激发 电子关联效应     

In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有 关键词： 二维电子气 散射时间 自洽计算     

Sr掺杂对La_(1-x)Sr_xMnO_3/LaAlO_3/SrTiO_3界面电子结构的影响

采用基于密度泛函理论的第一性原理计算方法,系统地研究了La_(1-x)Sr_xMnO_3层中Sr的掺杂方式和掺杂量对4La_(1-x)Sr_xMnO_3/3LaAlO_3/4SrTiO_3(LSMO/LAO/STO)异质结构原子和电子结构的影响.结果表明:对于相同的Sr掺杂量,掺杂方式的差异对体系电子结构的影响微弱,不会导致体系发生金属-绝缘体转变;掺杂量的不同对体系电子结构有着显著的影响,当Sr的掺杂量较少时,LAO/STO界面处存在着准二维电子气,当Sr的掺杂量高于1/3时,LAO/STO界面处准二维电子气消失.我们相信,Sr的引入以及通过Sr掺杂量的改变可以对LSMO覆盖层极化进行调控,这也是导致体系LAO/STO界面处金属-绝缘体转变的可能原因,进一步为极化灾变机制导致的界面处电子重构提供了证据.     

生物分子膜门电极AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器研究

设计并制作了结构尺寸为毫米量级的AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器,采用数值分析的方法分析了器件传感区域长度与宽度比值及待测物调控二维电子气(2DEG)距离与感测信号之间的关系,给出了结构尺寸为毫米量级的AlGaN/GaN HEMT生物传感器的设计依据,以不同浓度的前列腺特异性抗原(PSA)为待测物,对制作的AlGaN/GaN HEMT生物传感器进行了初步测量,测试结果表明,在50 mV的电压下,毫米量级的AlGaN/GaN HEMT生物传感器的对PSA的探测极限低于0.1 pg/ml.实验表明毫米量级的AlGaN/GaN HEMT生物传感器具有灵敏度高,易于集成等优点,具备良好的应用前景.