基于可调控狭缝光子晶体波导的微粒操控

提出并设计了一种用于真空中操控亚波长微粒的可调控渐变狭缝光子晶体波导结构.该结构利用光力将微粒捕获到狭缝中,使其沿光传输方向传输,并通过外加折射率调控的方式,将微粒输运到所需位置.分析了狭缝光子晶体波导的带隙结构、传输特性与微粒的受力情况,计算了热调控光子晶体波导的功耗与温度分布.结果表明,利用狭缝宽度渐变的硅基光子晶体波导,通过热调控改变硅折射率,可以实现光波截止位置从出射端到入射端的移动;对于总长度18μm的狭缝光子晶体波导,从入射端到出射端狭缝缩窄4nm时,控制微粒位置所需的折射率变化为0.012,而改变折射率所需的加热功率不高于13.7mW.这一结构将为微粒操控提供一种可能的实现方案.     

聚合物脊形光波导TM模色散特性的偏振修正

有机聚合物脊形光波导的色散特性对聚合物光子学器件性能具有重要影响.本文利用标量变分理论计算脊形光波导的有效折射率,其用到的近似光场分布运用变分有效折射率法获得.考虑折射率分布的横向变化,基于导模满足的矢量波动方程,利用微扰法对标量变分理论所得有效折射率进行偏振修正,求得精度更高的色散特性.对聚合物多模脊形光波导基模和高阶模的色散特性进行分析,研究了波导结构参数对色散特性的影响,分析了单模波导TM、TE基模的偏振色散特性.研究结果表明,运用本征方程分析TM模的色散特性误差大,必须加以修正;而对于TE模,其误差相对较小.     

电光聚合物波导中的锥形结构

提出并设计了一种基于电光聚合物的锥形波导,可用于单模光纤与电光聚合物波导器件之间的连接.锥形波导中采用了宽度锥形和折射率锥形结构.宽度锥形采用劈形形状,通过宽度和折射率的缓慢变化实现模场转换.劈形形状的宽度锥形具有较小的损耗且易于制作,折射率锥形可采用灰度掩膜光刻技术制作.研究了锥形波导的传输损耗与锥形波导的长度、波导宽度和厚度、材料吸收损耗等参数的关系及其优化,分析了锥形波导中的功率传输、模场分布与模式转换效率.结果显示锥形波导的传输损耗小于0.37 dB,光纤-波导-光纤的连接损耗优于1.62 dB,对插入损耗的改善达到8.78 dB,模场转换效率达到了83.7%.     

兼具低非线性和高功率限制的狭缝波导（英文）

利用非线性效应的全矢量模型和狭缝波导的有限元模场求解法,系统地研究了狭缝波导结构和包层材料对其非线性和功率限制特性的影响.研究结果表明,狭缝波导的硅臂宽度、狭缝宽度、硅层高度和包层材料均影响其非线性和功率限制特性.对于空气包层狭缝波导,不同结构参数下的最高功率限制因子对应的非线性系数均高于20 W^-1·m^-1,而最低非线性系数6.5 W^-1·m^-1均出现在模式截止附近,泄露损耗较大,功率限制较弱,故空气包层狭缝波导无法同时实现低非线性和高功率限制;如果在狭缝波导上包覆二氧化硅,则可以同时获得低非线性和高功率限制,非线性系数可低至4.12 W^-1·m^-1,同时功率限制因子可达42%.     

低损耗有机无机混合溶胶凝胶波导的实验研究

利用有机无机混合的溶胶凝胶方法在硅基底上制备波导薄膜.采用正硅酸四乙酯和苯基三乙氧基硅烷作为反应先驱物,利用旋涂的方法成膜,对其折射率,传输损耗以及条形波导的光刻、刻蚀特性进行了研究.测量了波导薄膜折射率随成分变化的关系.实验表明,该方法工艺简单,可以获得具有较低损耗的波导薄膜.测试得到632.8 nm波段的损耗系数为0.23 dB/cm.采用ICP刻蚀工艺获得了较为平整的条形波导.     

非线性介质的表面等离子体波导设计和优化

设计了一种基于非线性介质Si-NC/SiO2的混合表面等离子体波导,利用有限元方法定量分析了这种波导所支持基模的能流密度分布、有效折射率、传播长度和有效面积与几何结构参数以及非线性介质的依赖关系.分析结果表明,光场主要被限制在非线性区域,通过调节非线性层的厚度以及非线性比例因子,可以实现模式的有效折射率和传播长度等传输特性参数的调节.固定非线性介质比例因子,有效折射率和传播距离随非线性层厚度增加而增大;固定波导尺寸,有效折射率随比例因子增大而增大,传播距离和有效面积较小.最后,根据分析结果对非线性效应进行优化,优化后波导最优结构尺寸为波导宽度为250nm,非线性材料层厚度为100nm,硅层厚度为150nm.     

聚合物填充的狭缝波导定向耦合器的数值分析(英文)

利用亥姆霍兹方程和有限差分法,给出一种用于分析聚合物SU-8填充的双狭缝波导定向耦合特性的数值方法,推导出双耦合狭缝波导模式特性的特征方程,并做了离散化和稀疏化处理,得到耦合波导的模式场分布和有效折射率.通过求解最高阶偶对称和最高阶奇对称模式的有效折射率,得到TE和TM偏振态下定向耦合器的耦合长度.数值分析结果表明,当耦合间距小于800nm时,耦合长度小于100μm.利用椭偏仪测得狭缝波导各层材料的光学参数随工作波长的色散关系,研究分析了双狭缝波导耦合长度和模式损耗的色散特性.分析显示,随着工作波长的增大,两种偏振模式下的耦合长度均减小,且TM模式下的耦合长度大于TE模式下的耦合长度,当工作波长为1 550nm时,二者分别为28.2和26.2μm(两狭缝波导间的耦合间距为0.5μm时).同时,模式损耗也随波长的增大而减小,且TE模式损耗大于TM模式损耗,当工作波长为1 550nm时,TE及TM模式的振幅衰减系数分别为5.65和3.16dB/cm.     

聚合物脊形光波导的变分有效折射率法分析

聚合物脊形光波导是聚合物集成光电子器件的重要构成单元.利用有效折射率法计算聚合物脊形光波导的横向折射率分布及有效折射率,将各区域中的光场分布近似用分段函数表达.基于导模满足的标量波动方程,利用变分法确定变分参量,以求得准确的横向光场分布.对聚合物脊形多模光波导基模和高阶模的色散特性与横向场分布进行分析,研究了波导结构参数对色散特性的影响,计算出TM基模和高阶模的光场分布,得出了聚合物脊形光波导的单模传输条件.研究表明,该方法计算量小、精度高,对聚合物光电子器件中脊形光波导的理论分析与设计优化提供了简单高效的方法.     

超短脉冲激光在掺Er3+ 磷酸盐玻璃中制备光波导的实验研究

超短脉冲激光通过非线性吸收调制光学材料折射率提供了一种高效制备集成三维光子器件的途径.掺Er³⁺磷酸盐玻璃由于其优异的特性以及在1.55μm通信波段附近的发射光谱,成为了集成光学主动增益材料中的研究热点.实验采用重复频率1 kHz,中心波长800 nm,脉冲宽度120 fs的钛宝石飞秒激光放大系统作为制备波导的光源,系统研究了加工参数对激光写入形貌、波导形成及光学特性的影响.实验结果表明,在狭缝整形辅助短焦物镜横向刻写条件下,写入脉冲能量为1.8μJ时,光波导可以在写入速度为10μm/s-160μm的较宽范围内形成;写入速度为40μm/s时,光波导写入脉冲能量参数窗口为1.6μJ-2.0μJ;波导写入深度在125μm-200μm范围时,波导横截面对称性较好且折射率修改明显;近场强度测量结果显示所制备波导近场强度分布对称,导光特性良好.通过有限差分法反推波导区域折射率修改分布,结果显示最大折射率修改为Δn=6.6×10^-4.截断传输损耗测量结果显示所制备波导的传输损耗低至0.91 dB/cm.     

基于锥形渐变不对称耦合的模式复用/解复用器

设计了一种采用锥形渐变不对称耦合结构的模式复用/解复用器,并利用商用的0.18μm互补金属氧化物半导体兼容工艺进行制备.通过控制锥形波导的宽度,基于模式有效折射率匹配原则,实现锥形波导中的基模与多模波导中的高阶模式相互转化.测试结果表明:当器件用于TE0、TE1和TE2三个模式复用与解复用时,在1 530nm到1 570nm波长范围内,串扰低于-8.05dB;而当器件复用与解复用TE0和TE2时,串扰低于-16.43dB.     

Efficient design of silicon slot waveguide optical modulator

An optimal design of a slot waveguide is presented for realizing an ultrafast optical modulator based on a 220 nm silicon wafer technology. The recipe is to maximize the confinement and interaction between optical power supported by the waveguide and electric field applied through metallic electrodes. As height of waveguide is fixed at 220 nm, the waveguide and slot width are optimized to maximize the confinement factor of optical power. Moreover, metal electrodes tend to make the waveguide lossy, their optimal placement is calculated to reduce the optical loss and enhance the voltage per unit width in the slot. Performance of an optimally designed slot waveguide with metal electrodes as ultrafast modulator is also discussed.     

An azobenzene functionalized polymer for laser direct writing waveguide fabrication

We report on non-lithographic laser direct writing fabrication of optical waveguides by using a 4′-hydroxy-4-nitroazobene dye-functionalized polymer film. The polymer film reveals permanent change of refractive index at high laser illumination intensity. A focused continuous wave low power green laser beam at 532 nm wavelength is used to directly write waveguide structures on the polymer film. The magnitude of refractive index increase at film surface is about 0.006. One-step laser writing results in graded index waveguides in film depth direction under ambient conditions without pre- and post-processing. As a by-product, the laser writing also results in a very small air valley at the boundary between the laser written and non-written regions which may contribute in part although minimal to the waveguide lateral confinement and can be used for visual observation of waveguide patterns. The fabricated waveguide is found to be stable and easily reproducible.     

Spontaneous emission rate and optical amplification of Er3+ in double slot waveguide

The spontaneous emission(SE) of Er3+ embedded in a double slot dielectric structure was studied by a quantum-electrodynamical formalism. The study shows that the slot width and the position of Er3+ in slot structure have a significant effect on the SE. The double slot waveguides were fabricated by embedding two low-index Er/Yb silicate material layers into high-index silicon. The radiative efficiency of Er3+ in the double slot waveguides is found to be higher than that of the single slot waveguide, which is consistent with the theory simulation. The 0.67 d B signal enhancement at 1.53 ?m in a 4.6-mm-long slot waveguide was observed pumped by 1476 nm laser. These results show the relevance of our model to study the SE processes in multilayer structures and are important for future realization of silicon-compatible active optical devices.     

Athermal waveguides for optical communication wavelengths

We report on the design, fabrication, and characterization of temperature insensitive strip silicon-on-insulator racetrack resonators. The influence of various parameters, such as waveguide width, waveguide height, ring radius, coupling length, ring gap, and operating wavelength, on temperature-dependent wavelength shift is examined. A resonant wavelength shift of 0.2 pm/K at a 1550 nm wavelength is measured for 335 nm × 220 nm waveguides. A significant reduction of waveguide propagation losses, improved ring Q value, and higher extinction ratio are obtained after overlaying the silicon waveguides with a polymer cladding.     

Authentication labels based on guided-mode resonant filters

A guided-mode resonance (GMR) filter with wide angular tolerances is experimentally demonstrated as an authentication label illuminated with unpolarized white light. The proposed filter, based on a free-standing silicon nitride membrane suspended on a silicon substrate, is fabricated by using anisotropic wet etching to remove the substrate beneath the silicon nitride layer. Both grating and waveguide structures without a lower cladding layer, i.e., a substrate, are fabricated simultaneously on a silicon nitride membrane. Since the silicon nitride is transparent within the spectra of visible and infrared light, such suspended-membrane-type GMR filters are well suited for applications within the visible spectrum. Moreover, the high refractive index of silicon nitride allows the proposed filters to have strongly modulated gratings and an immunity to high angular deviation. The measured reflection resonance has an angular tolerance up to +/-5 degrees under normal incidence for the wavelength of 629.5 nm.     

Effective in-device r33 of 735 pm/V on electro-optic polymer infiltrated silicon photonic crystal slot waveguides

We design and fabricate a 320?nm slot for an electro-optic (E-O) polymer infiltrated silicon photonic crystal waveguide. Because of the large slot width, the poling efficiency of the infiltrated E-O polymer (AJCKL1/amorphous polycarbonate) is significantly improved. When coupled with the slow light effect from the silicon photonic crystal waveguide, an effective in-device r(33) of 735?pm/V, which to our knowledge is a record high, is demonstrated, which is ten times higher than the E-O coefficient achieved in thin film material. Because of this ultrahigh E-O efficiency, the V(π)L of the device is only 0.44?V?mm, which is to our knowledge the best result of all E-O polymer modulators.     

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is left at the side of waveguide.The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method,respectively.The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.     

LiNbO3:Fe晶体中光写入波导时折射率的变化规律

研究了利用光辐照法制作光折变波导时LiNbO3:Fe晶体中折射率变化的规律.分别采用波长为6328nm和532nm的寻常偏振和非常偏振的细激光束和片状激光束，在LiNbO3:Fe晶体中进行了写入波导实验.研究表明，制作波导的写入光宜采用寻常偏振光.在利用由光束辐照LiNbO3:Fe晶体形成的正折射率变化区域作为波导结构时，必须严格控制辐照时间.否则，由于长时间光辐照会带来较强的噪音栅以及折射率变化区域会发生扩展，而难以形成优 质波导.利用片光在“三明治”方式辐照下，以小曝光量制作波导时，可以避免噪音栅的 关键词： 光致折射率变化 光折变波导 光辐照法 LiNbO3:Fe晶体