磷掺杂纳米硅薄膜的研制

用PECVD薄膜沉积方法,成功地制备了磷掺杂纳米硅(nc-Si:H(P))薄膜.用扫描隧道电镜(STM)、Raman散射、傅里叶变换红外吸收(FTIR)谱、电子自旋共振(ESR)、共振核反应(RNR)技术对掺磷纳米硅进行了结构分析,确认了样品的微结构为纳米相结构.掺磷后膜中纳米晶粒的平均尺寸d减小,一般在25—45nm之间,且排列更加有序.掺磷nc-Si:H膜具有较高的光吸收系数,光学带隙在173—178eV之间,和本征nc-Si:H相同.掺杂nc-Si:H薄膜电导率在10^-1关键词：     

掺杂纳米硅薄膜中电子自旋共振研究

研究了掺杂纳米硅薄膜(nc∶Si∶H)中的电子自旋共振(ESR)及与之相关的缺陷态.样品是用等离子体增强化学气相沉积方法制成,为两相结构,即纳米晶粒镶嵌于非晶本体之中.对掺磷的nc-Si∶H样品,测量出其ESR信号的g值为1.9990—1.9991,线宽ΔH_pp为(40—42)×10^-4T,ESR密度Nss为10¹⁷cm^-3数量级.对掺硼的nc-Si∶H样品,其ESR信号的g值为2.0076—2.0078,ΔH_{关键词： 纳米硅薄膜 微结构 电子自旋共振}     

纳米硅薄膜

非晶态硅薄膜是当前重要的人工功能材料,它具有亚稳态结构,具有一系列不同于晶态硅的特征.十余年来,用非晶硅薄膜材料已研制成各种类型的非晶态半导体新器件[1].然而,由于这种材料本身还存在一些弱点,如结构上的亚稳状态及不稳定性,工艺上不易做到很好的重复,有较强的光感生效应及热不稳定性;迁移率及载流子寿命远低于晶态硅等,因而它的进一步开发和应用受到了限制. 如何改进非晶硅薄膜材料的性能、质量以及寻求提高迁移率、载流子寿命这些重要参数是当务之急.近几年,国外不少研究工作又重新回到探索和改进非晶硅薄膜材料性能上来,从薄膜沉…     

纳米硅薄膜退火特性

对使用等离子体增强化学汽相沉积(PECVD)法在不同淀积条件下制备的非晶硅(a-Si:H)、微晶硅(μc-Si:H)和纳米硅(nc-Si:H)薄膜在200—600℃温度范围进行常规退火研究。用共振核反应技术测量了样品中氢含量C_H值及退火对氢含量及其分布的影响。通过室温下对暗电导率的测量得到退火对nc-si:H薄膜电导率的影响,并与a-Si:H,μc-Si:H薄膜的退火行为作了比较。使用紫外/可见/近红外分光光度计对样品透射率进行了测量,分析计算得到了退火温度T_a与ac-Si:H薄膜光学带隙E_g~(o 关键词：     

退火对B掺杂纳米金刚石薄膜微结构和电化学性能的影响

采用热丝化学气相沉积法制备B掺杂纳米金刚石薄膜,并对薄膜进行真空退火处理,系统研究了不同退火温度对B掺杂纳米金刚石薄膜的微结构和电化学性能的影响.结果表明,当退火温度升高到800 ℃后,薄膜的Raman谱图中由未退火时在1157,1346,1470,1555 cm^-1处的4个峰转变为只有D峰和G峰,说明晶界上的氢大量解吸附量减少,并且D峰和G峰的积分强度比I_D/I_G值变为最小,即sp²相团簇     

纳米硅薄膜的生长动力学与计算机模拟

氢化纳米硅(nc-Si:H)薄膜由于其具有奇异的结构和独特的性质,而引起广泛的关注.本文在等离子体增强化学气相淀积(PECVD)系统中,以高纯H₂高度稀释SiH₄为反应气体源,在射频和直流双重功率源的激励下制备成功具有纳米结构的nc-Si:H薄膜.利用高分辨率电子显微镜(HREM)、Raman散射谱(RSS)、扫描隧道电子显微镜(STM)等实验技术对nc-Si:H薄膜样品作了研究.基于对薄膜制备过程的动力学分析,提出nc-Si:H薄膜的分形生长模型:扩散与反应限 关键词：     

稀土Nd,Ce掺杂硅基薄膜光致发光特性

测量了Nd,Ce稀土离了注入Si基晶片，在不同离子注入剂量、不同退火条件下的室温光致发光（PL）谱，结果表明它们均具有蓝、紫发光峰，且发光稳定。在一定范围内发光效率随掺杂浓度的增加而增大，随退火条件的不同而改变。运用原子力显微镜（AFM）对样品的表面形貌进行了观察，结果显示，样品表面颗粒大小、粗糙度将影响其发光效率。表面颗粒大小均匀，均方根粗糙度小的样品发光效率较高。通过对样品的卢瑟福背散射（RBS）能谱测量，对样品的表面结构进行了探讨，并讨论了表面结构与光致发光特性之间的联系。对样品的发光机理作了初步探讨。     

纳米硅/单晶硅异质结二极管的I-V特性

用纳米硅（nc_Si∶H）薄膜制成了纳米硅/单晶硅（nc_Si∶H/c_Si）异质结二极管，对nc_Si∶H/c_Si异质结的特性进行了研究，它具有很好的温度稳定性.温度从20℃上升到200℃ ，I_V曲线只有很小的漂移.对nc_Si∶H/c_Si异质结二极管的输运机理进行了讨论. 关键词： 异质结二极管 纳米硅薄膜 输运机理     

一种纳米硅薄膜的传导机制

基于对实验和理论的分析，提出一种异质结量子点隧穿（HQD）模型，并导出了纳米硅薄膜电导率完整的表达式．其主要思想是，纳米硅薄膜中的微晶粒（几个纳米大小）具有量子点特征，在微晶粒与界面之间由于两者能隙的差异构成晶间势垒，这类似于多晶硅中经常使用的晶间势垒模型（GBT）．考虑到量子点中的单电子隧穿特征，认为纳米硅薄膜中的电传导是由微晶粒中电子弹道式输运与单电子越过势垒的隧穿构成的．这就是HQD模型的主要内容，理论结果与实验相符 关键词：     

单层石墨烯杨氏模量的理论模型

石墨烯力学性能的研究对其在半导体技术中的应用是十分重要的,本文基于半连续体模型并结合石墨烯纳米结构特性,通过对原子的描述构建了石墨烯形变分量和位移分量的新关系,从而给出了单层石墨烯结构形变能,并计算了不同尺寸单层石墨烯的杨氏模量值.通过对不同方向杨氏模量的分析,讨论了单层石墨烯的手性行为.结果表明:随着尺寸的增加,单层石墨烯两个方向的杨氏模量分别趋于0.746 TPa和0.743 TPa,当尺寸相同时,两方向杨氏模量的最大差值不超过0.003 TPa,此结果与文献报道结果相符.在小应变情况下,单层石墨烯薄膜呈各向同性,且薄膜尺寸变化对该特性影响不大.该计算结果对研究石墨烯的其它力学特性提供一定的参考价值.     

分子动力学研究表面缺陷对硅纳米线杨氏模量的影响

硅纳米线因受量子尺寸效应与表面效应的影响而具有奇特的力、电及其耦合特性,成为了纳米电子器件的核心构件.然而在硅纳米线的制备过程中,表面产生缺陷不可避免.因此本文采用分子动力学方法着重研究了表面缺陷浓度对不同横截面形状(正方形、六角形和三角形)的[110]晶向和[111]晶向硅纳米线杨氏模量的影响.研究结果表明,当硅纳米线仅有单一表面缺陷时,不同晶向硅纳米线的杨氏模量均随表面缺陷浓度增加而迅速单调减小.当表面缺陷浓度为10%时,杨氏模量的减小幅度在10%-20%之间,减小幅度的差异与硅纳米线的晶向以及横截面形状密切相关.当存在多个表面缺陷时,杨氏模量随着缺陷浓度的增加表现出了不同程度的波动趋势.三角形截面硅纳米线的杨氏模量波动幅度最大,正方形截面的波动较小,即表面缺陷分布的不同对正方形截面硅纳米线的杨氏模量影响较小,这表明表面缺陷的影响与其分布及硅纳米线的横截面形状密切相关.通过与实验结果对比,本文的研究结果揭示了表面缺陷是导致硅纳米线杨氏模量实验值变小的重要因素,因此在表征硅纳米线的力学性能时,需要考虑表面缺陷的影响.     

Thermal stability and Young's modulus of mechanically exfoliated flexible mica

In recent years, mica has been successfully used as a substrate for the growth of flexible epitaxial ferroelectric oxide thin films. Here, we systematically investigated the flexibility of mica in terms of its thickness, repeated bending/unbending, extremely hot/cold conditions, and successive thermal cycling. A 20-μm-thick sheet of mica is flexible even up to the bending radius of 5 mm, and it is durable for 20,000 cycles of up- and down-bending. In addition, the mica shows flexibility at 10 and 773 K, and thermal cycling stability for the temperature variation of ca. 400 K. Compared with the widely used flexible polyimide, mica has a significantly higher Young's modulus (ca. 5.4 GPa) and negligible hysteresis in the force-displacement curve. These results show that mica should be a suitable substrate for piezoelectric energy-harvesting applications of ferroelectric oxide thin films at extremely low and high temperatures.     

Optical measurement of Young's modulus of a micro-beam

This paper presents an optical method based on the interference of light beams of equal path difference for the measurement of the Young's modulus of a micro-beam. An optical wedge which consists of an optical plate and a micro-beam which forms part of a micro-accelerometer is illuminated by a collimated monochromatic sodium light beam. Loading on the micro-beam is accomplished by a loading-pin mounted on a three-axis translation stage and the resulting interference fringe pattern is observed using a CCD camera connected to a computer. Loadings are recorded using a high-sensitive load cell which measures loads of up to 200 g with a resolution of 0.01 g. Test results conducted on micro-beams of different sizes show good repeatability and comparison of the experimental results with theory shows good agreement.     

杨氏模量实验中不确定度的评定方法

讨论了在杨氏模量实验的线性回归中,自变量有误差时的不确定度评定方法。     

杨氏弹性模量测量仪的改进

测定杨氏弹性模量的实验是大学物理实验课的重要实验之一,通过反复多次的实验探索,对杨氏弹性模量测量仪的关键性组件——光杠杆进行了有效改进从而彻底消除了光杠杆易翻落摔坏的隐患,使更换镜片方便,反射像十分易于寻找,实验效果非常明显.     

Large variation in Young's modulus of carbon nanotube yarns with different diameters

Twist-spun carbon nanotube (CNT) yarns are composed of numerous CNTs and their bundles with entangled and twisted structures. In this paper, we studied the mechanical properties of CNT yarns. The individual CNT, a component of yarn, is well known to have an extremely high mechanical strength. However, CNT yarns are very flexible and relatively free to transform their shapes, showing the potential for application in the design of wearable devices. Since CNT yarns have two opposing characteristics at the same time, a wide range of Young's modulus can be achieved by simply changing the geometrical structure while using the same fabrication process. We also suggest that CNT yarns can be utilized as the base material for several applications that require different stresses in a structure, such as bioimplants or foldable devices.     

基于纳米压痕法的多孔硅硬度及杨氏模量与微观结构关系研究

采用电化学腐蚀制备多孔硅，利用场致发射扫描式电子显微镜(field emission scanning electron microscope，FESEM)观测多孔硅的二维微观形貌，利用Nano Indenter XP中的纳米轮廓扫描仪组件(nano profilometry, NP)得到其三维拓扑分析图像，分析了微观结构差异的原因并讨论了多孔硅内部微观结构对其机械性能的影响；利用MTS Nano Indenter XP纳米压入测量仪器，研究了多孔硅的显微硬度和杨氏模量随压入深度的变化规律，比较了不同孔隙率多孔硅的机械性能差别.实验结果测得40mA/cm²，60mA/cm²，80mA/cm²和100mA/cm²四个不同腐蚀电流密度条件下制备多孔硅样品的孔隙率在60%—80%范围内，孔隙率随着腐蚀电流密度的增加而增大；在氢氟酸(HF)浓度为20%的条件下制备出多孔硅样品的厚度在40μm—50μm范围内；测得多孔硅的平均硬度、平均杨氏模量分别在0.478GPa—1.171GPa和10.912GPa—17.15GPa范围内，并且其数值随腐蚀电流密度的增加而减小，在纳米硬度范围内随压入深度的增加而减小，在显微硬度范围内其数值保持相对恒定，分析了样品表面、厚度、微观结构，及环境对其机械性能的影响，得到了多孔硅力学性能随其微观尺度形貌的变化规律. 关键词： 多孔硅 微观结构 硬度 杨氏模量     

Young's Modulus Characterization of Nano-Level Silicon Nanomembrane

Silicon nanomembrane (SiNM) has drawn great attention for the application in nanoelectrical devices as it shows excellent flexibility and is compatible with the integrated circuit process. The mechanical property measurement of the SiNM with nanoscale thickness is critical. A suspended SiNM (40 nm thick) for mechanical measurements is fabricated by transferring a chemically etched ultrathin monocrystalline silicon film from silicon on insulator wafer to a substrate with a multi-hole array. And then, the atomic force probe is utilized to load force on the free-standing SiNM to obtain a force deflection curve, and then the Young's modulus of such floating SiNM can be directly calculated based on the large deflection plane model. It shows that the Young's modulus of such SiNM is basically consistent with that of the bulk silicon. However, the SiNMs’ floating area significantly affects the results, i.e., the Young's modulus varies with the ratio of the suspended area diameter (i.e., hole diameter) to the film thickness. The Young's modulus is independent of hole diameter when the ratio is greater than 425. According to this relationship, the variation of Young's modulus can be predicted for arbitrary thick SiNMs and any transferable nanofilms.     

Young's modulus of ZnO microwires determined by various mechanical measurement methods

The mechanical properties of ZnO microwires have been studied using three different methods: quasi-static flexural measurements using atomic force microscopy, static measurements using a nano indenter, and dynamic flexural measurements using optical interferometry. ZnO microwires were synthesized by chemical vapor deposition method, and the crystal structure and quality were examined using x-ray diffraction and photoluminescence spectroscopy. The Young's moduli were estimated using the measurement results from the three methods, and they showed consistent values in the range 67.5–79.4 GPa for microwires with diameters of 1.8 μm ± 100 nm.