退火对Ga_2O_3薄膜特性的影响

采用金属有机物化学气相沉积法在c面蓝宝石衬底上生长了高质量的β-Ga_2O_3薄膜,并将样品分别在真空、氧气、氮气氛围下退火30 min,研究了各类退火工艺对Ga_2O_3薄膜特性的影响,对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明,各类退火工艺均能够优化薄膜的晶体质量和表面形貌,同时有效改善了薄膜的光学性质。其中,氧气退火后的样品在可见光波段透射率高达83%,且吸收边更加陡峭;表面粗糙度降至0.564 nm,其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰,这是大量氧空位的存在导致的。     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

考虑量子效应的短沟道MOSFET二维阈值电压模型

通过数值方法求解泊松方程和薛定谔方程的自洽解，提出了考虑量子效应时不同于经典理论的阈值条件，并得出了精确的一维阈值电压模型，模拟结果与实验十分符合.在此基础上，基于准二维泊松方程，通过考虑短沟道效应和量子效应，建立了较为精确的适合于小尺寸MOSFET的量子修正阈值电压模型,模型同样适用于(超)深亚微米高k栅介质MOSFET电特性的模拟和结构参数的设计. 关键词： 阈值电压 量子效应 短沟道效应 高k栅介质     

考虑量子效应的高k栅介质SOIMOSFET特性研究

本文主要研究考虑量子效应的高k栅介质SOIMOSFET器件特性．通过数值方法自治求解薛定谔方程和泊松方程,得到了垂直于SiO2／Si界面方向上载流子波函数及能级的分布情况,结合Young模型,在考虑短沟道效应和高庀栅介质的情况下,对SOIMOSFET的阈值电压进行模拟分析．结果表明：随着纵向电场的增加,量子化效应致使反型层载流子分布偏离表面越来越严重,造成了有效栅氧化层厚度的增加和阈值电压波动．采用高向栅介质材料,可以减小阈值电压,抑制DIBL效应．较快的运算速度保证了模拟分析的效率,计算结果和ISE仿真结果的符合说明了本文的模型精度高．     

Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga₂O₃ Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal-semiconductor-metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga₂O₃ films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230-250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga₂O₃/Au Schottky junction can effectively suppress the PPC in the photodetector, while maintaining high gain. The mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models, which is attributed to the correlation with ionized oxygen vacancies in the Schottky junction. The positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen vacancies. The realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.     

Raman spectroscopy of gallium‐based hydrotalcites of formula Mg6Ga2(CO3)(OH)16· 4H2O

Insight into the unique structure of hydrotalcites has been obtained using Raman spectroscopy. Gallium‐containing hydrotalcites of formula Mg₄Ga₂(CO₃)(OH)₁₂· 4H₂O (2:1 Ga‐HT) to Mg₈Ga₂(CO₃)(OH)₂₀· 4H₂O (4:1 Ga‐HT) have been successfully synthesized and characterized by X‐ray diffraction and Raman spectroscopy. The d(003) spacing varied from 7.83 Å for the 2:1 hydrotalcite to 8.15 Å for the 3:1 gallium‐containing hydrotalcite. Raman spectroscopy complemented with selected infrared data has been used to characterize the synthesized gallium‐containing hydrotalcites of formula Mg₆Ga₂(CO₃)(OH)₁₆· 4H₂O. Raman bands observed at around 1046, 1048 and 1058 cm⁻¹ are attributed to the symmetric stretching modes of the CO₃²⁻ units. Multiple ν₃ CO₃²⁻ antisymmetric stretching modes are found at around 1346, 1378, 1446, 1464 and 1494 cm⁻¹. The splitting of this mode indicates that the carbonate anion is in a perturbed state. Raman bands observed at 710 and 717 cm⁻¹ assigned to the ν₄ (CO₃²⁻) modes support the concept of multiple carbonate species in the interlayer. Copyright © 2009 John Wiley & Sons, Ltd.     

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.     

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried oxide(BOX) in an SOI device is split into two sections: the source-section BOX and the drain-section BOX. A highly-doped Si layer, referred to as a non-depletion potential-clamped layer(NPCL), is positioned under and close to the two BOX sections. In the split BOXes and the Si region above the BOXes, the blocking voltage(BV) is divided into two parts by the NPCL. The voltage in the NPCL is clamped to be nearly half of the drain voltage. When the drain voltage approaches a breakdown value, the voltage sustained by the source-section BOX and the Si region under the source are nearly the same as the voltage sustained by the drain-section BOX and the Si region under the drain. The vertical BV is therefore almost doubled. The effectiveness of this new structure was verified for a P-channel SOI lateral double-diffused metal-oxide semiconductor(LDMOS) and can be applied to other high-voltage SOI devices. The simulation results show that the BV in an NPCL P-channel SOI LDMOS is improved by 55% and the specific on-resistance(Ron,sp) is reduced by 69% in comparison to the conventional structure.     

Dy~(3+)和Tb~(3+)掺杂镓硼锗硅酸盐玻璃发光性能

采用高温熔融法分别制备了高含量Tb~(3+)单掺和Dy~(3+)/Tb~(3+)共掺的镓硼锗硅酸盐(GBSG)发光玻璃,并分析了其光谱性能。根据Dy~(3+)和Tb~(3+)掺杂的镓硼锗硅酸盐(GBSG)玻璃的激发和发射光谱、荧光寿命衰减曲线等特性,探讨了Dy~(3+)与Tb~(3+)之间的能量传递关系。结果表明:玻璃的发光强度和荧光寿命随着Tb~(3+)、Dy~(3+)含量的增加而减少。与相同摩尔浓度的单掺玻璃相比,共掺玻璃发光强度的衰减速率先减慢而后加快。Tb~(3+)、Dy~(3+)离子之间的能量传递方式为无辐射共振能量传递和~4F_(9/2)+~7F_6→~6H_(15/2)+~5D_4交叉弛豫效应。     

Local structure around Zn and Ga in solution‐processed In–Ga–Zn–O and implications for electronic properties

We study by X‐ray absorption spectroscopy the local structure around Zn and Ga in solution‐processed In–Ga–Zn–O thin films as a function of thermal annealing. Zn and Ga environments are amorphous up to 450 °C. At 200 °C and 450 °C, the Ga atoms are in a β‐Ga₂O₃ like structure, mostly tetrahedral gallium oxide phase. Above 300 °C, the Zn atoms are in a tetrahedral ZnO phase for atoms inside the nanoclusters. The observed formation of the inorganic structure above 300 °C may be correlated to the rise of the mobility for IGZO TFTs. The Zn atoms localized at the nanocluster boundary are undercoordinated with O. Such ZnO cluster boundary could be responsible for electronic defect levels. Such defect levels were put in evidence in the upper half of the band gap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

一种基于双闭环控制策略的新型矩阵变换器研究

针对传统矩阵变换器存在电压传输比低的缺陷，提出一种新型的矩阵变换器，称为Boost交直交矩阵变换器的电路拓扑结构. 介绍了该拓扑结构的基本构成和工作原理，分析推导了其电压传输比与占空比之间函数关系的解析表达式，着重阐述了所采用的双闭环控制策略的基本设计方法，最后通过仿真对该新型电路拓扑的有效性和可行性进行了验证. 结果表明：该电路能实现电压传输比和输出频率的任意调节，且输出波形的正弦性好、失真度小，从而有效地解决了传统矩阵变换器电压传输比低的固有缺陷，具有一定的应用价值. 关键词： boost交直交矩阵变换器 电压传输比 双闭环控制策略 仿真     

Effect of switching ultrasonic amplitude in preparing a hybrid of fullerene (C60) and gallium oxide (Ga2O3)

In this study, we proposed ‘switching ultrasonic amplitude’ as a new strategy of applying ultrasonic energy to prepare a hybrid of buckminsterfullerene (C₆₀) and gallium oxide (Ga₂O₃), C₆₀/Ga₂O₃. In the proposed method, we switched the ultrasonic amplitude from 25% to 50% (by 5% amplitude per 10 min, within 1 h of ultrasonic irradiation) for the sonochemical treatment of a heterogeneous aqueous mixture of C₆₀ and Ga₂O₃ by a probe-type ultrasonic horn operating at 20 kHz. We found that compared to the conventional techniques associated with high amplitude oriented ultrasonic preparation of functional materials, switching ultrasonic amplitude can better perform in preparing C₆₀/Ga₂O₃ with respect to avoiding titanium (Ti) as an impurity generating from the tip erosion of a probe-type ultrasonic horn during high amplitude ultrasonic irradiation in an aqueous medium. Based on SEM/EDX analysis, the quantity of Ti (wt.%) in C₆₀/Ga₂O₃ prepared by the proposed technique of switching ultrasonic amplitude was found to be 1.7% less than that prepared at 50% amplitude of ultrasonic irradiation. The particles of C₆₀/Ga₂O₃ prepared by different modes of amplitude formed large (2–12 μm) aggregates in their solid phase.Whereas, in the aqueous medium, they were found to disperse in their nano sizes. The minimum particle size of the as-synthesized C₆₀/Ga₂O₃ in an aqueous medium prepared by the proposed method of switching ultrasonic amplitude reached to approximately 467 nm. Comparatively, the minimum particle sizes were approximately 658 nm and 144 nm, using 25% and 50% amplitude, respectively. Additionally, Ga₂O₃ went under hydration during ultrasonic irradiation. Moreover, due to the electron cloud interference from C₆₀ in the hybrid structure of C₆₀/Ga₂O₃, the vibrational modes of Ga₂O₃ were Raman inactive in C₆₀/Ga₂O₃.     

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.     

常压MOCVD生长Ga2O3薄膜及其分析

以去离子水(H₂O)和三甲基镓(TMGa)为源材料,用常压MOCVD方法在蓝宝石(0001)面上生长出β-Ga₂O₃薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)以及二次离子质谱(SIMS)实验表征Ga₂O₃外延膜的质量.在X射线衍射谱中有一个强的Ga₂O₃(102)面衍射峰,其半峰全宽(FWHM)为0.25°,表明该Ga₂O₃外延膜是(102)择优取向.在二次离子质谱中除了C、H、O和Ga原子外,没有观测到其他原子.     

A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement

In this paper for the first time, a partial silicon-on-insulator (PSOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) is proposed with a novel trench which improves breakdown voltage. The introduced trench in the partial buried oxide enhances peak of the electric field and is positioned in the drain side of the drift region to maximize breakdown voltage. We demonstrate that the electric field is modified by producing two additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the trench-partial-silicon-on-insulator (T-PSOI) structure. Hence, a more uniform electric field is obtained. Two dimensional (2D) simulations show that the breakdown voltage of T-PSOI is nearly 64% higher in comparison with partial silicon on insulator (PSOI) structure and alleviate self heating effect approximately 9% and 15% in comparison with its conventional PSOI (C-PSOI) and conventional SOI (C-SOI) counterparts respectively. In addition the current of the T-PSOI, C-PSOI, conventional SOI (C-SOI), and fully depleted conventional SOI (FC-SOI) structures are 90, 82, 74, and 44 μA, respectively for a drain–source voltage V_DS = 30 V and gate–source voltage V_GS = 10 V.     

An XPS Study of the Effect of La2O3 Dopant on the Dispersion and Thermal Stability of Pt/Al2O3 Catalysts

The Pt(4d)/Al(2s) XPS intensity ratio for Pt/Al₂O₃ catalysts increases with the addition of La₂O₃ as a dopant. The Pt(311) line in the X-ray diffraction pattern also broadens with the addition of La₂O₃. These data imply that doping the Pt/Al₂O₃ catalyst with La₂O₃ increases the dispersion of the platinum which in turn would be expected to increase the activity and thermal stability of the catalyst.     

A novel scheme to acquire enhanced up-conversion emissions of Ho3+ and Yb3+ co-doped Sc2O3

A detailed investigation about the effect of Sc₂O₃: 1 mol%Ho³⁺/5 mol%Yb³⁺ co-doped with Ce⁴⁺ ions prepared by sol-gel methods was performed systematically. Under the excitation of 980 nm laser diode, both green emission (553 nm, ⁵F₄/⁵S₂→⁵I₈) and red emission (672 nm, ⁵F₅→⁵I₈) were both observed in the emission spectra of the samples, which were found to be two-photon process and sensitized by Yb³⁺ ions. With the increasing of Ce⁴⁺ ions, the up-conversion green emission intensity are increased by 6.52, 8.69, 10.85, 13.92 and 16.66 fold, corresponding to the Ce⁴⁺ ions concentrations from 5 mol% to 13 mol%, respectively. The number of photons are necessary to populate the upper emitting state decreases to 2 and the infrared absorption coefficient is reduced, when the Ce⁴⁺ ions concentration increase to 13 mol%. Ce⁴⁺ ions play an important role in tailoring the local crystal field around Ho³⁺ ions, lowering the highest phonon cut-off energy of matrix and reducing the infrared absorption coefficient, thus hindering the non-radiative processes, which contribute to the increased emission intensity. The excellent enhancement makes it a promising multifunctional optical luminescence material.     

对含Y_2O_3和Gd_2O_3的La_2O_3-B_2O_3-BaO玻璃化学稳定性研究

本文研究了含Ｙ２Ｏ３和Ｇｄ２Ｏ３的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃的耐水性和耐酸性。结果表明，比硅酸盐玻璃化学稳定性差的Ｌａ２Ｏ３－Ｂ２Ｏ３－ＢａＯ玻璃，可以适量的用Ｙ２Ｏ３和Ｇｄ２Ｏ３取代Ｌａ２Ｏ３，可得以改善