All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser

A 1.55 μm InGaAsP-InP partly gain-coupled two-section DFB self-pulsation laser (SPL) with a varied ridge width has been fabricated. The laser produces self-pulsations with a frequency tuning range of more than 135 GHz. All-optical clock recovery from 40 Gb/s degraded data streams has been demonstrated. Successful lockings of the device at frequencies of 30 GHz, 40 GHz, 50 GHz, and 60 GHz to a 10 GHz sidemode injection are also conducted, which demonstrates the capability of the device for all-optical clock recovery at different frequencies. This flexibility of the device is highly desired for practical uses.     

Injection locked multi-section gain-coupled dual mode DFB laser for terahertz generation

A dual mode multi-section gain-coupled distributed feedback laser with tunable mode spacing is subharmonically injection locked at 0.315 THz. The injected signal consists of an optical comb with harmonics 35 GHz apart and a bandwidth of approximately 1.9 THz. The optical comb is a result of strong four-wave mixing in a highly-nonlinear dispersion-shifted fiber. In order to observe locking of the multi-section laser, the output is optically downconverted to RF frequencies using the same optical comb. The locked multi-section DFB laser is a coherent and tunable optical source suitable for continuous-wave terahertz generation systems.     

Transfer-matrix analysis of the spectral linewidth of a partly gain-coupled MQW DFB laser

The spectral linewidth of a partly gain-coupled MQW DFB laser with a quantum-well grating is analysed using the transfer-matrix method. The effective linewidth enhancement factor and the longitudinal spontaneous emission enhancement factor are calculated by newly derived analytical expressions in terms of the transfer matrix.     

Gaussian-like tapered grating quarter wave-shifted DFB semiconductor lasers for high-power single-mode operation

Received: 27 July 1998/Revised version: 25 September 1998     

Spatial and spectral filtering of tapered lasers by using tapered distributed Bragg reflector grating

A 1040 nm tapered laser with tapered distributed Bragg reflector (DBR) grating is designed and fabricated. By designing the grating with tapered layout, the tapered DBR grating exhibits the scattering effect on side backward-traveling waves, thus achieving additional suppression of parasitic oscillation. Under the suppression of parasitic oscillation, the spatial and spectral characteristics of the tapered laser are improved. The experimental results show that a near-Gaussian far-field distribution and a kink-free P-I characteristics are achieved, and a single peak emission with a wavelength of 1046.84 nm and a linewidth of 56 pm is obtained.     

A fiber bragg grating acceleration sensor interrogated by a DFB laser diode

A fiber Bragg grating (FBG) acceleration sensor interrogated by a DFB laser diode is demonstrated; the sensor is fabricated by packaging a FBG on to a cantilever; the interrogation scheme takes advantage of the intensity modulation of the narrow spectral bandwidth light of a distributed feedback laser diode, when the reflection spectrum curve of a FBG moves due to the strain which is applied on the sensor. The sensor’s response to the frequency and acceleration is measured by the experiment, and the factors which have an impact on the sensor’s sensitivity are also discussed.     

Holographic DFB laser with fan-shaped grating for a spectrofluorimeter

A method for recording fan-shaped transmitting phase holographic gratings that ensure tuning of the wavelength of emission for a DFB (distributed-feedback) dye laser is presented. Traditional optical elements are used in the scheme of grating recording. A change in the degree of grating fanning is reached here without replacement of gratings. The possibility of obtaining frequency-tuned emission by means of the fan-shaped gratings created is demonstrated experimentally. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 48–51, January–February, 2000.     

Improved design of a DFB Raman fibre laser

A Raman fibre laser based on phase shifted DFB structures is modelled for the first time. Using parameters of realistic devices, the model predicts low-threshold and highly-efficient laser output. The change of position and width of the phase shift were found to have a substantial impact on laser performance.     

A fibre grating DFB laser for generation of optical microwave signal

A distributed feedback fibre laser is realised with a phase-shifted fibre Bragg grating. Dual-mode operation is obtained by means of linear birefringence for heterodyne generation of optical microwave signal. The two modes, operating in the same cavity produce a beat signal with exceptionally low-phase noise. The linewidth of the resulting microwave signal obtained is less than 1 kHz.     

Sampled grating distributed feedback (SG DFB) semiconductor laser diode

A laser diode was designed using a method called sampled grating (SG) distributed feedback (DFB), in which the couplings have been distributed in certain regions along the laser cavity (i.e., regions contain grating). These regions play a big role in pushing the main mode to propagate faster than the side mode by increasing the time delay between them. This delay is due to the empty regions (i.e., regions without grating) along the laser cavity. Neither a phase shift nor incomplete grating have been taken into account with the new structure. The theoretical model in the present work is based on the coupled-mode equations which have been solved numerically by the mean of transfer matrix method (TMM).     

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.     

A flat-topped etched diffraction grating demultiplexer with low polarization-dependent loss using a tapered MMI structure

A flat-topped etched diffraction grating(EDG)demultiplexer with a low polarization-dependent loss(PDL)is designed.A design and simulation method based on the method of moment(MoM)is proposed.A 65-channel EDG demultiplexer with channel spacing of 100 GHz is considered as a design example.A tapered multi-mode interferometer(MMI)is used to flatten the passband of the EDG demultiplexer.The numerical results show that the exit width of the tapered waveguide impacts the loss of the TE case more than that of the TM case.Based on this fact,the exit width of the taper is optimized to obtain the lowest PDL.The tapering angle is also optimized where the minimal ripple is obtained.The designed EDG demultiplexer has an excellent flat-topped spectral response and a very low PDL.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW,and static extinction ratio of-7 dB at the applied bias voltage from 0.5 to -2.0 V.     

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1st order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5387~μ m in the experiment. The typical threshold current of the device is 30~mA, and the optical output power is about 10~mW at the injection current of 100~mA.     

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient \(\kappa\), and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.     

Broadband filter using cladding profile linearly tapered long-period waveguide grating

A method to increase the bandwidth of long-period waveguide gratings (LPWGs) is proposed using linearly tapered cladding profile and large coupling constant. Compared to conventional uniform LPWG, the simulated 20-dB bandwidth of the designed chirped LPWG is enlarged by 14 times, from 0.9 nm to 12.8 nm. Besides, a chirped LPWG with the new structure is also fabricated, and bandwidth broadening effect is observed.     

An apodized DFB semiconductor laser realized by varying duty cycle of sampling Bragg grating and reconstruction-equivalent-chirp technology

An apodized DFB semiconductor laser based on reconstruction-equivalent-chirp (REC) technology is proposed and investigated numerically. By changing the duty cycle of the sampling period, the magnitude of the equivalent index modulation is varied. Thus the equivalent apodization is introduced instead of an actual apodization. This novel DFB structure is advantageous in that it can enlarge the threshold gain difference and improve the mode stability compared with the conventional DFB laser. Moreover, the structure can be easily fabricated by standard holographic technology instead of high cost Electron-beam lithography.     

Packaging multi-wavelength DFB laser array using REC technology

Packaging of Distributed feedback （DFB） laser array based on reconstruction=equivalent-chirp （REC） tech- nology is a bridge from chip to system, and influences the practical process of REC chip. In this letter, DFB laser arrays of 4 channel @1 310 nm and 8 channel @1 550 nm are packaged. Experimental results show that both 4 channel @1 310 nm and 8 channel @1 550 nm have uniform wavelength spacing and average side mode suppression ratio （SMSR）〉35 dB. When I=35 mA, we get the total output power 1 mW of 4 channel @1 310 nm, and 227 μW of 8 channel @1 550 nm, respectively. The high frequency characteristic of the packaged chips is also demonstrated, and the requirements of 4× 10 G or even 8× 10 G system can be reached, we demonstrate the practical and low cost performance of REC technology and indicates its potential application in the future fiber-to-the-home （FTTH）.     

Improved performance of SPR sensors by a chemical etching of tapered optical fibers

We present the results of a chemical attack on the optical fiber surface previous to the deposition of the double layer (metal plus dielectric) in Double-layer uniform-waist tapered fibers (DLUWTs) used for the development of SPR sensors. It is shown how this simple chemical treatment increases the roughness of the surface and permits improvement of the stability of the deposits and the general performance of the sensors. The obtained devices are robust and very compact, their sensitivity is good and repeatability of the measurements is remarkably increased. The procedure can be useful for any fiber-optic sensor.