On the field dependence of the interface energy in AF/FM bilayers

In the investigations of antiferromagnetic (AF)/ferromagnetic (FM) bilayer samples, often distinct experimental techniques yield different values for the measured exchange anisotropy field (H_E). We propose that the observed discrepancy may be accounted in part by the dependence of the unidirectional anisotropy with the value of the externally applied cooling field (h). Using a simple microscopic model for representing the AF/FM interface, which incorporates the effect of interface roughness, we show that the interface energy between the AF and FM layer indeed varies with h, as recently observed in anisotropic magnetoresistance measurements, lending support to our proposal.     

A new paradigm for exchange bias in polycrystalline thin films

In this paper we provide a review and overview of a series of works generated in our laboratory over the last 5 years. These works have described the development and evolution of a new paradigm for exchange bias in polycrystalline thin films with grain sizes in the range 5-15 nm. We have shown that the individual grains in the antiferromagnetic (AF) layer of exchange bias systems contain a single AF domain and reverse over an energy barrier which is grain volume dependent. We show that the AF grains are not coupled to each other and behave independently. Understanding this process and using designed measurement protocols has enabled us to determine unambiguously the blocking temperature distribution of the AF grains, the anisotropy constant (K_AF) of the AF, understand the AF grain-setting process, and predict its magnetic viscosity. We can explain and predict the grain size and film thickness dependence of the exchange field H_ex. We have also studied interfacial effects and shown that there are processes at the interface, which can occur independently of the bulk of the AF grains. We have seen these effects via studies of trilayers and also via the field dependence of the setting process which does not affect the blocking. From separate experiments we have shown that the disordered interfacial spins exist as spin clusters analogous to a spin glass. These clusters can order spontaneously at low temperatures or can be ordered by the setting field. We believe it is the degree of order of the interfacial spins that gives rise to the coercivity in exchange bias systems. Based on this new understanding of the behaviour of the bulk of the grains in the antiferromagnet and the interfacial spins we believe that we have now a new paradigm for the phenomenon of exchange bias in sputtered polycrystalline thin films. We emphasize that the phenomenological model does not apply to core-shell particles, epitaxial single-crystal films and large grain polycrystalline films.     

Modeling of magnetization processes in exchange coupled fluoride bilayers

The angular dependence of the hysteresis loops of ferromagnetic/antiferromagnetic (FM/AF) bilayer with a compensated interface is investigated by means of numerical simulation for a perfect single-crystalline AF layer having no AF domains at the FM/AF interface, as well as for a twinned AF layer. For applied magnetic field direction nearly parallel to the AF easy axis the completely reversible loops with finite exchange bias field have been obtained for the uniform case, while a large exchange bias has been found for the twinned case, in agreement with experimental results.     

铁磁/反铁磁双层膜系统中的交换偏置及矫顽场的温度特性

提出了一个讨论铁磁／反铁磁双层膜中的交换偏置及矫顽场温度特性的物理模型，该模型，假设铁磁层为具有单畴各向异性的单畴膜而反铁磁层由许多相互独立具有多晶各向异性的颗粒组成，其温度依赖性主要来源于系统态的热不稳定，包括反铁磁颗粒易轴取向的热涨落和相关磁学量的温度依赖性等。计算结果表明其交换偏置随温度的增加非线性地减少而其矫顽场在体阻截温度处达极大值，且其体阻截温度随反铁磁颗粒粒径的增加而增加。我们的计算结果和相关实验结果一致，通过本的讨论，我们建议通过铁磁膜耦合上大粒径硬反铁磁颗粒膜可获得高交换偏置、低矫顽场且近独立于温度的相关磁学器件。     

Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.     

A polycrystalline model for magnetic exchange bias

This work introduces a realistic model for the magnetic behavior of polycrystalline ferromagnet/antiferromagnet (FM/AF) systems with granular interfaces. It considers that, for strong enough interface exchange coupling, the AF layer breaks the adjacent FM into small-sized domains and that at the interface there exist grains with uncompensated spins interacting with the FM magnetizations; the classification of these grains as unstable (rotatable, responsible for a coercivity enhancement) or stable (adding to the bias) depends on both the anisotropy and the magnetic coupling with the adjacent FM. The distinctive characteristic of the model is that the effective rotatable anisotropy changes when the external magnetic field is varied resulting in a non-zero hard-axis coercivity, a feature commonly observed, though little understood and often ignored. The applicability of this model was checked on a typical magnetron-sputtered IrMn/Co bilayer and excellent agreement between experiment and simulation was achieved.     

Unified nonequilibrium dynamical theory for exchange bias and training effects

We have investigated the exchange bias and training effect in the ferromagnetic/antiferromagnetic (FM/AF) heterostructures using a unified Monte Carlo dynamical approach. The magnetization of the uncompensated AF layer is still open after the first field cycling is finished. Our simulated results show obvious shift of hysteresis loops (exchange bias) and cycling dependence of exchange bias (training effect) when the temperature is below 45~K. The exchange bias field decreases with decreasing cooling rate or increasing temperature and the number of the field cycling. Essentially, these two effects can be explained on the basis of the microscopical coexistence of both reversible and irreversible moment reversals of the AF domains. Our simulations are useful to understand the real magnetization dynamics of such magnetic heterostructures.     

Dense skyrmion crystal stabilized through interfacial exchange coupling: Role of in-plane anisotropy

A Monte Carlo simulated-annealing algorithm was used to study the magnetic state in an in-plane helimagnet layer on triangular lattice that exchange couples to an underlayer with strong out-of-plane anisotropy. In the single helimagnet layer with in-plane anisotropy (K), the formation of labyrinthlike domains with local spin spirals, instead of parallel stripes, is favored, and these domains rapidly transform into dense skyrmion crystals with increasing interfacial exchange coupling (J′), equivalent to a virtual magnetic field, and finally evolve to an out-of-plane uniform state at large enough J′. Moreover, with increasing K, the skyrmion crystal state can vary from regular 6-nearest-neighboring circular skyrmion arrangement to irregular squeezed skyrmions with less than 6 nearest neighbors when the in-plane anisotropy energy is higher than the interfacial exchange energy as the skyrmion number is maximized. Finally, we demonstrated that the antiferromagnetic underlayer cannot induce skyrmions while the chirality inversion can be achieved on top of an out-of-plane magnetization underlayer with 180◦ domain walls, supporting the experimental findings in FeGe thin film. This compelling advantage offers a fertile playground for exploring emergent phenomena that arise from interfacing magnetic skyrmions with additional functionalities.     

Extracting uniaxial anisotropy of ferromagnetic layer in exchange-biased system

Effective anisotropy of the ferromagnetic pinned layer of ferro(FM)-antiferromagnetic (AF)-coupled NiFe(FM)/FeMn(AF) exchange-biased system was investigated in a broad frequency range (100 MHz-5 GHz) using a complex permeability spectrum. The exchange bias and effective uniaxial anisotropy fields of the thin film have been computed theoretically using the Landau-Lifschitz-Gilbert (LLG) equation. From the measurements, uniaxial anisotropy of the pinned FM layer has been extracted to understand the nature of the exchange bias in the system. It is found that the uniaxial anisotropy field of NiFe layer when exchange biased with the AF layer increases from 5 to 15 Oe at different external magnetic fields.     

Field dependent specific heat and longitudinal magnetization of the quantum magnet layer Cs2CuCl4: Anisotropy effects

We have addressed the specific heat and magnetization of an anisotropic spin-1/2 triangular Heisenberg antiferromagnet Cs₂CuCl₄ in the presence of magnetic field at finite temperature. We have investigated the behavior of thermodynamic properties by means of excitation spectrum in terms of a hard core bosonic representation. The effect of in-plane anisotropy on thermodynamic properties has also been studied via the bosonic model by Green’s function approach. This anisotropy is considered for exchange constants that couple spin components perpendicular to magnetic field direction. We have found the temperature dependence of the specific heat and longitudinal magnetization in the gapped field induced spin-polarized phase for various magnetic fields and anisotropy parameters. Furthermore we have studied the magnetic field dependence of specific heat and magnetization for various anisotropy parameters. Our results show temperature dependence of specific heat includes a peak so that its temperature position goes to higher temperature with increase of magnetic field. We have found the magnetic field dependence of specific heat shows a monotonic decreasing behavior for various magnetic fields due to increase of energy gap in the excitation spectrum.     

Magnetic order in lightly doped La2-xSrxCuO4

We study long wavelength magnetic excitations in lightly doped La2-xSrxCuO4 (x相似文献   

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.     

New Trends in Magnetic Exchange Bias

The study of layered magnetic structures is one of the hottest topics in magnetism due to the growing attraction of applications in magnetic sensors and magnetic storage media, such as random access memory. For almost half a century, new discoveries have driven researchers to re-investigate magnetism in thin film structures. Phenomena such as giant magnetoresistance, tunneling magnetoresistance, exchange bias and interlayer exchange coupling led to new ideas to construct devices, based not only on semiconductors but on a variety of magnetic materials Upon cooling fine cobalt particles in a magnetic field through the Néel temperature of their outer antiferromagnetic oxide layer, Meiklejohn and Bean discovered exchange bias in 1956. The exchange bias effect through which an antiferromagnetic AF layer can cause an adjacent ferromagnetic F layer to develop a preferred direction of magnetization, is widely used in magnetoelectronics technology to pin the magnetization of a device reference layer in a desired direction. However, the origin and effects due to exchange interaction across the interface between antiferromagneic and ferromagnetic layers are still debated after about fifty years of research, due to the extreme difficulty associated with the determination of the magnetic interfacial structure in F/AF bilayers. Indeed, in an AF/F bilayer system, the AF layer acts as “the invisible man” during conventional magnetic measurements and the presence of the exchange coupling is evidenced indirectly through the unusual behavior of the adjacent F layer. Basically, the coercive field of the F layer increases in contact with the AF and, in some cases, its hysteresis loop is shifted by an amount called exchange bias field. Thus, AF/F exchange coupling generates a new source of anisotropy in the F layer. This induced anisotropy strongly depends on basic features such as the magnetocrystalline anisotropy, crystallographic and spin structures, defects, domain patterns etc of the constituant layers. The spirit of this topical issue is, for the first time, to gather and survey recent and original developments, both experimental and theoretical, which bring new insights into the physics of exchange bias. It has been planned in relation with an international workshop exclusively devoted to exchange bias, namely IWEBMN’04 (International Workshop on Exchange Bias in Magnetic Nanostructures) that took place in Anglet, in the south west of France, from 16th to 18th September 2004. The conference gathered worldwide researchers in the area, both experimentalists and theoreticians. Several research paths are particularly active in the field of magnetic exchange coupling. The conference, as well as this topical issue, which was also open to contributions from scientists not participating in the conference, has been organized according to the following principles: 1. Epitaxial systems: Since the essential behavior of exchange bias critically depends on the atomic-level chemical and spin structure at the interface between the ferromagnetic and antiferromagnetic components, epitaxial AF/F systems in which the quality of the interface and the crystalline coherence are optimized and well known are ideal candidates for a better understanding of the underlying physics of exchange bias. The dependence of exchange bias on the spin configurations at the interfaces can be accomplished by selecting different crystallographic orientations. The role of interface roughness can also be understood from thin-film systems by changing the growth parameters, and correlations between the interface structure and exchange bias can be made, as reported in this issue. 2. Out-of-plane magnetized systems: While much important work has been devoted to the study of structures with in-plane magnetization, little has been done on the study of exchange bias and exchange coupling in samples with out-of-plane magnetization. Some systems can exhibit either in-plane or out-of-plane exchange bias, depending on the field cooling direction. This is of particular interest since it allows probing of the three-dimensional spin structure of the AF layer. The interface magnetic configuration is extremely important in the perpendicular geometry, as the short-range exchange coupling competes with a long-range dipolar interaction; the induced uniaxial anisotropy must overcome the demagnetization energy to establish perpendicular anisotropy films. Those new studies are of primary importance for the magnetic media industry as perpendicular recording exhibits potential for strongly increased storage densities. 3. Parameters tuning exchange bias in polycrystalline samples and magnetic configurations: Different parameters can be used to tune the exchange bias coupling in polycrystalline samples similar to those used in devices. Particularly fascinating aspects are the questions of the appearance of exchange bias or coercivity in ferromagnet/antiferromagnet heterostructures, and its relation to magnetic configurations formed on either side of the interface. Several papers report on either growth choices or post preparation treatments that enable tuning of the exchange bias in bilayers. The additional complexity and novel features of the exchange coupled interface make the problem particularly rich. 4. Dynamics and magnetization reversal: Linear response experiments, such as ferromagnetic resonance, have been used with great success to identify interface, surface anisotropies and interlayer exchange in multilayer systems. The exchange bias structure is particularly well suited to study because interface driven changes in the spin wave frequencies in the ferromagnet can be readily related to interlayer exchange and anisotropy parameters associated with the antiferromagnet. Because the exchange bias is intimately connected with details of the magnetization process during reversal and the subsequent formation of hysteresis, considerations of time dependence and irreversible processes are also relevant. Thermal processes like the training effect manifesting itself in changes in the hysteretic characteristics depending on magnetic history can lead to changes in the magnetic configurations. This section contains an increasing number of investigations of dynamics in exchange bias coupled bilayers, and in particular those of the intriguing asymmetric magnetization reversal in both branches of a hysteresis loop. The Editors of the topical issue: Alexandra Mougin Laboratoire de Physique des Solides, UMR CNRS 8502, Université Paris Sud, F-91405 Orsay, France Stéphane Mangin Laboratoire de Physique des Matériaux, UMR CNRS 7556, Université Henri Poincaré, F-54506 Nancy, France Jean-Francois Bobo Laboratoire de Physique de la Matière Condensée - NMH, FRE 2686 CNRS ONERA, 2 avenue Edouard Belin, F-31400 Toulouse, France Alois Loidl Experimentalphysik V, EKM, Institut für Physik, Universität Augsburg, Universitätsstrasse 1, D-86135, Augsburg, Germany     

Soft X-ray resonant magnetic scattering studies on Fe/CoO exchange bias system

We have used soft X-ray resonant magnetic scattering (XRMS) to search for the presence of an effective ferromagnetic moment belonging to the antiferromagnetic (AF) layer which is in close contact with a ferromagnetic (F) layer. Taking advantage of the element specificity of the XRMS technique, we have measured hysteresis loops of both Fe and CoO layers of a CoO(40 Å)/Fe (150 Å) exchange bias bilayer. From these measurements we have concluded that the proximity of the F layer induces a magnetic moment in the AF layer. The F moment of the AF layer has two components: one is frozen and does not follow the applied magnetic field and the other one follows in phase the ferromagnetic magnetization of the F layer. The temperature dependence of the F components belonging to the AF layer is shown and discussed.     

Single-layer and multilayered films for perpendicular recording based on a Co-Cr alloy

Results of materials research into the dependence of the magnetic properties of Co-Cr recording media on the structural properties are discussed in relation with results from recording experiments. The magnetic properties depend strongly on the preparation conditions. An increase in substrate temperature results in an increase of the coercivity, but also gives rise to inhomogeneities of the Co-Cr film in the growth direction and to lateral inhomogeneities due to Cr segregation. The inhomogeneities in the growth direction are suppressed by the application of a non-magnetic, amorphous Ge layer between the substrate and the Co-Cr layer, resulting in a magnetic layer with a large perpendicular anisotropy. From the slope of the hysteresis loops we obtain, using a model proposed by Kooy and Enz, an estimate for the mean size of the stripe domains, which is found to increase with increasing layer thickness and decrease with increasing substrate temperature. The change in the size of the stripe domains is consistent with the trends calculated from noise spectra obtained in recording experiments. Multilayers of thin Co-Cr layers alternated with non-magnetic Ge layers are also discussed.     

铁磁/反铁磁双层膜中交换偏置及矫顽场的温度特性研究

讨论了铁磁-反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。在本模型中,温度的依赖性来源于系统态的热激发以及相关磁学参量的温度依赖性。数值结果显示:低温下,交换偏置和矫顽场随温度的升高而减少,但是随着界面的交换耦合的增强或铁磁层各向异性的减少,其交换偏置变得平坦。随着温度的升高,交换偏置减少直至零;而矫顽场却达到峰值后再减为零。这些结果与实验结果定性一致。根据数值计算结果,可以预见软的铁磁层耦合上硬的反铁磁层,在恰当的交换耦合强度下,可构建具有大的交换偏置、小矫顽场;并在某温度区几乎不随温度变化的磁存贮器件.     

Experimental signature of phonon-mediated spin relaxation in a two-electron quantum dot

We observe an experimental signature of the role of phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends nonmonotonously on the energy splitting. A simple theoretical model is derived to capture the underlying physical mechanism. The present experiment confirms that spin-flip energy is dissipated in the phonon bath.     

Anisotropy of spin splitting and spin relaxation in lateral quantum dots

Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B ||[100] than for B || [110].     

Relaxation in magnetic nanostructures

Nanostructured magnetic materials present a wide range of magnetic relaxation phenomena. One problem in studying nanomagnetic granular materials is the strong dependence of the relaxation with the anisotropy barrier which, even for systems with narrow size distributions, brings difficulties in the analysis of the experimental data. Molecular magnetism, with the chemists’ bottom-up approach to build molecular nanostructures, provides this field with some beautiful model systems, well ordered crystals of single molecule magnets, single molecule chains, molecular magnetic multilayers and others novelties to appear. Most of these systems present slow relaxation and the study of these well-characterized nanomaterials may elucidate many features that are difficult to grasp in the non molecular materials.