电子多声子作用对散射时间的效应

本文给出电子多声子作用对电子寿命影响的一般讨论方法,同时给出温度T》德拜温度T_D的表达式,指出YBaCuO体系中电子多声子作用对高温超导性可能是重要的。 关键词：     

铜薄膜电子-声子耦合系数的实验研究

电子元件的超微型化和高集成化,对金属互连线的导热性能提出极高的要求;同时,新型高性能光电材料的开发,又需要尽可能降低受光激发电子与声子之间的耦合。电子、声子的相互作用,对于能量转换与传递过程微观机理的研究至关重要。这些载能粒子的作用时间都在飞秒-皮秒量级,本文采用飞秒激光瞬态热反射方法,对铜薄膜中微观粒子作用过程进行了飞秒量级的实验研究。通过对实验系统精细调节,得到了理想的信号曲线,在此基础上测量了不同泵浦光功率下沉积在硅基底上厚度为60 nm铜薄膜的电子-声子耦合系数,测量结果为(11～12)×10~(16)W/(m~3K),和理论值14×10~(16)W/(m~3K)较为接近,并且不随泵浦光强发生变化。     

高分子中的电子-声子相互作用与非线性光学极化率

反式聚乙炔的三次谐波产生谱(THG)在0.6和0.9eV处有两个共振峰。现有的各种理论都不能满意地解释第二个共振峰。只有正确地得到激发态的阻尼才能确定第二个峰。本文计算了高分子中电子-声子相互作用所引起的激发阻尼,它随激发态而变化。根据此种激发阻尼求得的三次谐波产生谱,其理论计算与实验数据很好地符合。 关键词：     

络合物形成对电子-声子耦合的影响

测量了室温(20℃)条件下极性溶剂1, 2-二氯乙烷-碘溶液中的β胡萝卜素 紫外-可见吸收光谱和拉曼光谱. 结果表明, 生成络合物的β胡萝卜素在460 nm处的紫外-可见吸收峰消失, 并在1000 nm处出现β胡萝卜素与碘形成络合物的吸收峰, 致使514.5 nm激光激发时察觉不到络合物中β胡萝卜素离子CC键的共振拉曼光谱.而溶液中没有形成络合物的β胡萝卜素CC键拉曼散射截面随络合物浓度增加而减小, 拉曼光谱线宽增加, π电子-声子耦合系数增加, 其机理是随络合物增加溶液混乱程度增加、β胡萝卜素分子结构有序性减小所致, 且可以用“相干弱阻尼电子-晶格振动”、“有效共轭长度”、“振幅模型”等理论给予解释. 关键词： 络合物 电子-声子耦合 共振拉曼光谱     

一维介观环中持续电流的电子-声子相互作用非经典效应

基于声子相干态功效和计及声子压缩态非经典效应,研究了电子-磁振子和电子-声子相互作用对一维介观环持续电流的影响. 与自由环比较,由于电子-磁振子相互作用,持续电流的振幅呈现指数减小. 对于正常态电子,电子-声子相互作用导致持续电流以Debye-Waller(D-W)因子衰减.但是计入跳步电子-单声子相干态关联效应导致系统本征态能量大幅度下降,从而持续电流I_n有大幅度增加.另一方面计入双声子相干态行为,由于声子压缩态效应压缩电子-相干(态)声子弹性散射行为,导致电子绕环运 关键词： 持续电流 电子-声子相互作用 声子相干态 声子压缩态效应     

用光谱烧孔研究卟啉掺杂的高分子薄膜中电子-声子的相互作用

本文对电子给体、受体双掺杂在高分子薄膜中形成的光谱烧孔体系,做温度循环实验,研究体系中电子-声子的相互作用,得到了表征电子-声子耦合强度的黄昆因子和薄膜中局域振动的声子频率.     

巡游电子系统中电子—声子相互作用对磁性激发的影响

从Ｐｅｉｅｒｌｓ－Ｈｕｂｂａｒｄ哈密顿量出发，讨论了电子－声子相互作用对巡游电子系统磁性激发的影响。结果表明，电子－声子相互作用，不仅改变了Ｘ＾－＋（ｑ，ω）的动力学特性，而且在系统能带结构中，使两个自旋子带分裂减小，从而更有利于电子－空穴对的个别激发；另一方面，电－声子相互作用导致自旋波激发出现能隙。     

传导电子与声子的相互作用对局域磁矩的影响

本文在Anderson提出的s-d混合模型中,考虑了传导电子与声子的相互作用(简写成EPI)和传导电子与d电子之间的库仑相互作用。主要讨论了EPI对局域磁矩的存在和大小的影响。     

量子阱中电子-LO声子相互作用引起共振喇曼散射的不对称线形

提出在量子阱中,由于连续态电子与LO声子相互作用,通过对量子阱进行某种设计,并以特定的激光频率入射,可以导致Raman谱中很强的Fano现象.以GaAs-Al_2Ga_(1-x)As为例计算了几种量子阱结构下的不对称参量q,并给出了相应的Fano线形 关键词：     

铁磁薄膜中圆偏振光感应的瞬态磁光Kerr峰的物理起源

使用飞秒时间分辨抽运-探测磁光Kerr光谱技术,实验研究了圆偏振光抽运面内磁化FePt和垂直磁化GdFeCo薄膜的磁化演化动力学,发现在时间延迟零点处均出现瞬态Kerr峰.分析了此Kerr峰的起源,指出此瞬态Kerr峰与铁磁性无关,可能起源于自由电子的顺磁磁化,而顺磁磁化的外磁场来自圆偏振抽运光的逆Faraday效应.基于顺磁磁化模型的计算结果支持此观点.基于此观点,逆Faraday效应感应的磁场脉冲宽度应该与激光脉冲宽度一致.     

激光辐照固体靶产生等离子体反冲研究

提出一种通过诊断等离子体反冲动量来计算激光加载产生冲击压强的方法. 当强激光辐照固体靶表面时, 所产生的高速喷射的等离子体对靶具有反冲作用, 通过诊断等离子体反冲动量的变化可以计算激光辐照固体靶产生的冲击压强变化. 本文利用辐射流体力学软件研究了这种诊断方法, 模拟采用的激光功率密度为5×10¹²-5×10¹³ W/cm², 激光脉宽选取纳秒量级. 模拟结果表明该方法是有效且可行的.     

Characterization of polymer thin films obtained by pulsed laser deposition

The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate).The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry.It was found that for laser fluences up to 1.5 J/cm² the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm² the polyepichlorohydrin films present deviations from the bulk polymer.Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm²).The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material.The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.     

金属Fe薄膜的PLD制备及其非线性光学性质研究

采用脉冲激光沉积（PLD）技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时，Fe薄膜在MgO基片上有很好的结晶性，并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性，得到了Fe薄膜的非线性折射率n₂＝709×10^-5cm²/ kW，非线性吸收系数 β＝-552×10^-3cm/W. 关键词： Fe薄膜 非线性 脉冲激光沉积     

Structural characterization of AlN films synthesized by pulsed laser deposition

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 × 10⁸ W/cm², repetition rate 3 Hz, 10 J/cm² laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10⁻⁴ Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.     

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.     

Role of vanadium content in ZnO thin films grown by pulsed laser deposition

Vanadium-doped ZnO films (Zn_1−xV_xO, where x = 0.02, 0.03, 0.05 and 0.07), were formed from ceramic targets on c-cut sapphire substrates using pulsed laser deposition at substrate temperature of 600 °C and oxygen pressure of 10 Pa. In order to clarify how the vanadium concentration influences the films’ properties, structural and magnetic investigations were performed. All films crystallised in wurtzite phase and presented a c-axis preferred orientation at low concentrations of vanadium. The results implied that the doping concentration and crystalline microstructure influence strongly the system's magnetic characteristics. Weak ferromagnetism was registered for the film with the lowest doping concentration (2 at.%), which exhibited a ferromagnetic behavior at Curie temperature higher than 300 K. Increasing the vanadium content in the film caused degradation of the magnetic ordering.     

High-speed laser welding of plastic films

Laser welding of plastic materials has a large field of applications in the packaging industry provided that it can compete, in quality and productivity, with currently used industrial methods. Welding of white and transparent thin films of polypropylene and polyethylene of low and high density at high speeds of 20 m s⁻¹ using a CO₂ laser has been studied experimentally.‘ The weld process has been characterised by the specific energy required for each thickness, kind of plastic and the resistance of the weld seam. The influence of the dimensions of the laser beam spot on weld strength has also been analysed.     

长脉冲激光作用下薄膜表面鼓包的形成机理

在光学薄膜的激光损伤实验中,可以在显微镜下观测到激光辐照引起的尺寸较大、形状对称性很好的鼓包。从杂质气化的角度,应用弹性力学的球壳受压膨胀模型,分析薄膜表面鼓包的形成机制,同时得到了相应情况下薄膜的损伤机制。结果表明,半径越大杂质在激光辐照下越容易引起薄膜破坏,填埋得越浅的杂质也越容易引起薄膜破坏。杂质诱导破坏机制下,薄膜的裂纹首先出现在杂质附近的薄膜基体中。在薄膜中出现裂纹的临界状态时,半径越大、填埋得越深的杂质所引起的鼓包尺寸越大、高度越高。这种热力耦合模型,弥补了现有理论的不足,进一步完善了现有理论。     

贴膜条件下飞秒激光诱导硅基表面锥状微结构

利用波长为800 nm的飞秒脉冲激光,对表面贴有聚对苯二甲酸乙二醇酯透明膜的单晶硅片进行扫描,研究了不同激光制备参数对微结构形成的影响.结果表明,锥状微结构是否形成取决于激光能量密度,能量密度太小时不能形成锥状结构,能量密度太大时易破坏锥状突起;而激光扫描速度可直接影响锥状微结构的质量,扫描速度太小时也易破坏锥状结构突起,扫描速度太大时,由于作用深度太浅使得锥状结构轮廓不分明.在此基础上对实验参数进行优化,得到了较理想的锥状微结构.最后通过分析指出,贴膜条件下锥状微结构的形成是由激光烧蚀作用和氧化作用共同引起的,且激光烧蚀作用占主导.