高温超导滤波器的光刻工艺

根据高温超导薄膜的特点,详细讨论了制备高温超导滤波器的光刻技术及在制备的各环节中需注意的问题,实验结果表明:此种方法提高了制备的成功率。     

锥形半导体激光芯片的光刻工艺研究

针对锥形半导体激光器中的脊形波导区宽度较小的问题,对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域,采用不同精度的双标记刻蚀方法,细化对脊形波导和锥形波导的刻蚀中的对准问题,并使光刻标在不同的光刻版上相错位排列,在相应光刻版中相互遮挡,反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad的激光输出。     

高温超导平面电路光刻工艺

在研究了传统光刻工艺的基础上 ,针对高温超导平面电路自身对工艺的要求 ,结合高温超导薄膜的特点 ,提出了几点工艺方法上的改进 ,解决了传统光刻工艺中存在的几个问题。实验结果表明 ,这种新的工艺方法不仅增加了高温超导平面电路制备工艺的稳定性 ,而且提高了样品的可重复性。     

用双光束干涉制作二维光子晶体

利用双光束干涉,在光敏材料上制作光子晶体结构.通过改变两束光之间的夹角可以改变制备样品的周期.改变曝光次数以及两次曝光时干涉条纹的夹角可以分别得到一维、二维正方晶格以及二维三角晶格结构的光子晶体.     

太赫兹金属双光栅超厚胶光刻工艺

介绍了制备某太赫兹频率真空辐射光栅的超厚胶光刻工艺,针对工艺中的难点(大厚度和高深宽比)展开了深入分析。实验分析了基片处理、涂胶、前烘、曝光、后烘、显影等工艺过程对光刻的影响,通过优化工艺参数,解决了胶膜脱落、开裂,不同胶层间的结合,光栅沟槽间的光刻胶残留等问题,成功制备了厚度为700 m、深宽比为14的侧壁陡直、表面平整的双光栅结构胶膜。     

太赫兹金属双光栅超厚胶光刻工艺

介绍了制备某太赫兹频率真空辐射光栅的超厚胶光刻工艺,针对工艺中的难点(大厚度和高深宽比)展开了深入分析。实验分析了基片处理、涂胶、前烘、曝光、后烘、显影等工艺过程对光刻的影响,通过优化工艺参数,解决了胶膜脱落、开裂,不同胶层间的结合,光栅沟槽间的光刻胶残留等问题,成功制备了厚度为700μm、深宽比为14的侧壁陡直、表面平整的双光栅结构胶膜。     

激光微织构拉刀制备与能量残留

基于将表面织构技术应用于刀具表面可以有效改善刀具切削性能,结合拉刀材料性能,提出一种微织构拉刀的加工方法。利用激光加工技术在拉刀后刀面加工出一种微织构,并研究各种加工参数对织构形貌的影响。深入研究Q频、功率、扫描速度及加工次数对织构及其润湿性的影响。实验结果表明:低Q频下织构边界模糊,高Q频下边界清晰;随功率上升,织构边界膨胀严重,重铸区不断增大;加工次数与微织构深度近似成正比关系;随扫描速度增大,材料的去除率下降,材料残留明显;制备完成初期织构表面存在能量残留,使得疏水织构出现亲水特性。     

激光微织构拉刀制备与能量残留

基于将表面织构技术应用于刀具表面可以有效改善刀具切削性能,结合拉刀材料性能,提出一种微织构拉刀的加工方法。利用激光加工技术在拉刀后刀面加工出一种微织构,并研究各种加工参数对织构形貌的影响。深入研究Q频、功率、扫描速度及加工次数对织构及其润湿性的影响。实验结果表明：低Q频下织构边界模糊,高Q频下边界清晰;随功率上升,织构边界膨胀严重,重铸区不断增大;加工次数与微织构深度近似成正比关系;随扫描速度增大,材料的去除率下降,材料残留明显;制备完成初期织构表面存在能量残留,使得疏水织构出现亲水特性。     

迈克尔逊干涉仪双透射光干涉测激光波长

一种迈克尔逊双透射光干涉测激光波长的方法,该方法巧妙地提高了干涉仪的灵敏度,并将条纹吞吐的现象转化为观察屏上的明暗变化,同时可以灵活改进计数方法,减少实验工作量。该方法思路简单,易于实现,有利于拓展思维。     

硅基支撑系统的光刻工艺

为提高硅基支持系统制备中光刻过程的线宽精度,用正交试验分析了前烘、曝光、显影主要步骤中一些主要参数对制备结果的影响,得到了它们的影响程度的规律以及较优的参数组合。在此基础上设计和训练了合适的前向误差反向传播神经网络,对主要工艺参数进行了进一步的分析、预测和优选,并用实验加以验证。最终得到在胶厚约1.55 m时,前烘温度100 ℃,时间90 s; 曝光时间5 s; 显影温度15 ℃,时间90 s时,光刻后图形的线宽偏差最小,达到了0.3 m以下。     

激光干涉光刻法制作100 nm掩模

介绍了一种利用激光干涉光刻技术得到特征图形,并通过离子束刻蚀将图形转移到铬层上,从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真,从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统,用257 nm的激光光源实现光刻,得到特征尺寸为100 nm的图形,再经过离子束刻蚀,最终得到周期200 nm、线宽100 nm的掩模。     

多光束激光干涉光刻图样

利用电磁理论,研究了多光束激光干涉图样的产生原理,结合计算机数值模拟和相关实验结果,分析了干涉图样的影响因素。研究结果表明：多光束激光干涉图样可以看成是多组余弦分布的平行线条纹的叠加;相干光束的偏振方向、入射方向、光束间相差是干涉图样的重要影响因素,改变这些因素,余弦分布的平行线条纹的振幅、置、周期和方向发生变化,图样也随之变化。     

High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation

High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm². A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.     

Random laser from engineered nanostructures obtained by surface tension driven lithography

The random laser emission from the functionalized thienyl‐S,S‐dioxide quinquethiophene (T5OCx) in confined patterns with different shapes is demonstrated. Functional patterning of the light emitter organic material in well defined features is obtained by spontaneous molecular self‐assembly guided by surface tension driven (STD) lithography. Such controlled supramolecular nano‐aggregates act as scattering centers allowing the fabrication of one‐component organic lasers with no external resonator and with desired shape and efficiency. Atomic force microscopy shows that different geometric pattern with different supramolecular organization obtained by the lithographic process tailors the coherent emission properties by controlling the distribution and the size of the random scatterers.     

The theoretic analysis of maskless surface plasmon resonant interference lithography by prism coupling

The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of subwavelength scale. High intensity of electric field can be obtained because of the coupling between SPPs and evanescence under a resonance condition, which can reduce exposure time and improve contrast. In this paper, several critical parameters for maskless surface plasmon resonant lithography are described, and the preliminary simulation based on a finite difference timedomain technique agrees well with the theoretical analysis, which demonstrates this scheme and provides the theoretical basis for further experiments.     

Fabrication of a 256-bits organic memory by soft x-ray lithography

This paper reports a procedure of soft x-ray lithography for the fabrication of organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to lithograph positive resist, polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250~nm.     

宽带折反射式紫外光刻物镜的设计

本文设计了一种新系列的紫外或远紫外激光光刻物镜,它与国内外已有的紫外物镜相比,在365nm以下的光谱区,具有更宽的光谱工作带宽和较高的数值孔径.以宽带准分子激光或短弧汞氙灯做光源,无需另加色散补偿光学元件,可以进行同轴对准.     

Investigation of contact lithography in the 5–20 nm region with a laser plasma source

In this paper, we present experiments of extreme ultraviolet (EUV) contact lithography based on a compact laser-produced plasma (LPP) and investigated the radiation of the plasma from Cu, Fe, W targets. We measured the depth of development of a polychlorinated methylstyrene (PCMS) resist exposed through a 100 I mm⁻¹ Cu net for times ranging from 10 to 40 minutes using different targets.     

Nanoimprint lithography using IR laser irradiation

A new technique called “infrared laser-assisted nanoimprint lithography” was utilised to soften the thermoplastic polymer material mR-I 8020 during nanoimprint lithography. A laser setup and a sample holder with pressure and temperature control were designed for the imprint experiments. The polymer was spin coated onto crystalline Si <1 1 1> substrates. A prepatterned Si <1 1 1> substrate, which is transparent for the CO₂ laser irradiation, was used as an imprint stamp as well. It was shown, that the thermoplastic resist mR-I 8020 could be successfully imprinted using the infrared CW CO₂ laser irradiation (λ = 10.6 μm). The etching rate of the CO₂ laser beam irradiated mR-I 8020 resist film under O₂ RF (13.56 MHz) plasma treatment and during O₂ reactive ion beam etching was investigated as well.     

Study on wetting properties of periodical nanopatterns by a combinative technique of photolithography and laser interference lithography

This study presents the wetting properties, including hydrophilicity, hydrophobicity and anisotropic behavior, of water droplets on the silicon wafer surface with periodical nanopatterns and hierarchical structures. This study fabricates one- and two-dimensional periodical nanopatterns using laser interference lithography (LIL). The fabrication of hierarchical structures was effectively achieved by combining photolithography and LIL techniques. Unlike conventional fabrication methods, the LIL technique is mainly used to control the large-area design of periodical nanopatterns in this study. The minimum feature size for each nanopattern is 100 nm. This study shows that the wetting behavior of one-dimensional, two-dimensional, and hierarchical patterns can be obtained, benefiting the development of surface engineering for microfluidic systems.