GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells grown on (4 1 1)A GaAs substrates by MBE

Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs) (AlAs) QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width ( ) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs) (AlAs) QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs) (AlAs) QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7 7 mm ), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) QWs grown on the (4 1 1)A GaAs substrates.     

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and photoreflectance spectra from 10 K to room temperature. The photoluminescence spectral profiles comprise contributions from four equally separated energy levels of InAs quantum dots. The emission profiles involving ground state and excited states have different temperature evolution. Abnormal spectral narrowing occurred above 200 K. In the photoreflectance spectra, major features corresponding to the InAs wetting layer and GaAs layers were observed. Temperature dependences of spectral intensities of these spectral features indicate that they originate from different photon-induced modulation mechanisms. Considering interband transitions of quantum dots were observed in photoluminescence spectra and those of wetting layer were observed in photoreflectance profiles, we propose that quantum dot states of the system are occupied up to the fourth energy level which is below the wetting layer quantum state.     

InAs/GaAs表面量子点的压电调制反射光谱研究

运用压电调制反射光谱(PzR)方法测量了在以GaAs(311)B为衬底的In_0.35Ga_0.65As模板上生长的InAs表面量子点结构的反射谱.在77K温度下，观察到了来自样品各个组成结构(包括表面量子点本身、被覆盖层覆盖的量子点、In_0.35Ga_0.65As模板以及GaAs衬底等)的调制信号.来自表面量子点本身的调制信号是多个清晰的调制峰.用一阶和三阶微分洛伦兹线形对PzR谱中对应结构的实验数据进行了拟合，精确确定了与样品的各个组成结构相对应的调制峰的能量位置.对不同样品PzR谱的差异进行了定性的说明. 关键词： 压电调制光谱 InAs/GaAs 表面量子点 洛伦兹线形拟合     

Structure of InAs/GaAs quantum dots grown with Sb surfactant

InAs quantum dots in GaAs, grown under the presence of Sb by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Large flat quantum dots with a truncated pyramidal shape, base lengths between 15 and 30 nm, heights of 1–3 nm, and a rather pure InAs stoichiometry were found for the case of an Sb supply during the InAs deposition. If Sb is already supplied during GaAs stabilization prior to InAs deposition, the dots become even larger and tend to get intermixed with Ga, but remain coherently strained with a reversed cone-like In distribution. Regarding the quantum dot growth Sb acts as surfactant, whereas an incorporation of individual Sb atoms was observed in the wetting layer.     

图形衬底量子线生长制备与荧光特性研究

报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的. 关键词： V型槽图形衬底 量子线 GaAs     

Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

The Raman spectra of the optical confined phonons in the GaAs/AlAs ultra-thin layer superlattices grown with different growth conditions were used to determine the compositional profiles and to study the process of segregation at the heterointerfaces. A modified kinetic model was developed in order to calculate the compositional profiles in the samples under investigation. The comparison between the experimentally obtained compositional profiles and those calculated by the kinetic model allowed us to determine the parameters characterizing the segregation. It was shown that the increase of pressure of As acts equivalently to the decrease of the growth temperature, resulting in a more abrupt compositional profile.     

Controlled positioning of self-assembled InAs quantum dots on (1 1 0) GaAs

We report on a new approach for positioning of self-assembled InAs quantum dots on (1 1 0) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control position and ordering of the quantum dots with epitaxial precision as well as size and size homogeneity. Furthermore, photoluminescence investigations on dot ensembles and on single dots confirm the high homogeneity and the excellent optical quality of the quantum dots fabricated.     

Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

In the paper, the comparative analysis of type-II InAs/GaSb SLs deposited on three types of GaSb buffers: homoepitaxial, metamorphic and one grown using the interfacial misfit (IMF) array technique has been presented. The buffer layers as well as superlattices were grown under nominally identical technological conditions. HRXRD investigations proved better crystal quality of the metamorphic material than the IMF-GaSb. FWHM_RC were equal to 156 arcsec and 196 arcsec, respectively. The surface roughness of about 1?ML and 4?MLs was obtained using the atomic force microscope for 4.0?μm–metamorphic GaSb and 1.5?μm-IMF-GaSb layers, respectively. The etch pits density for both buffers was similar, 1–2?×?10⁷?cm^?2. Superlattice with 500 periods deposited on the homoepitaxial buffer was used as a reference of the best crystal quality. HRTEM images revealed straight InAs/GaSb interfaces with 1?ML thicknesses in this sample. The interfaces in SL deposited on IMF-GaSb buffer were undulated and smeared over 3?MLs. The use of the metamorphic buffer resulted in 1–2?ML straight InAs/GaSb interfaces. The main reason for this is the roughness of IMF-GaSb buffer with mounds on the surface. Based on the obtained results we have demonstrated the advantage of metamorphic approach over IMF growth mode in GaSb/GaAs material system. A two times thicker buffer could be the price worth paying for high quality structures, even when working in the production mode.     

Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates

InAs self-assembling quantum dots (SAQDs) were grown on GaAs(n 1 1) substrates (n=2,3,4,5) by molecular beam epitaxy. Their structural and optical properties were studied by reflection high-energy electron diffraction, atomic force microscopy (AFM) and photoreflectance spectroscopy (PR). The PR spectra from 0.7 to 1.3 eV presented transitions associated to the SAQDs. The energy transitions were obtained by fitting the PR spectra employing the third derivative line-shape model. For n=2,4,5, two functions were required to fit the spectra. For n=3 only one function was required, in agreement with the more uniform SAQDs size distribution observed by AFM on GaAs(3 1 1)A. Franz–Keldysh oscillations (FKO) were observed in the PR spectra at energies higher than the GaAs band gap. From the FKO analysis we obtained the GaAs built-in internal electric field strength (F_int) at the InAs/GaAs(n 1 1) heterointerface. From F_int we made an estimation of the GaAs strain at the heterointerface.     

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.     

Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates

Various temperature measurements of cyclotron resonance (CR) under pulsed ultra-high magnetic field up to 160 T were carried out in InGaAs/GaAs superlattice (SL) and InGaAs/AlAs SL samples grown by molecular beam epitaxy on GaAs substrates. Clear free-electron CR and impurity CR signals were observed in transmission of CO₂ laser with wavelength of 10.6 μm. A binding energy of impurities in these SLs was roughly estimated based on the experiment as result, and we found it was smaller than the previous experimental result of GaAs/AlAs SLs and theoretical calculation with a simple model.     

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density.The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E_F) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.     

Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAs(1 0 0) 2° substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality.     

A novel method for positioning of InAs islands on GaAs (1 1 0)

A novel method for positioning of InAs islands on GaAs (1 1 0) by cleaved edge overgrowth is reported. The first growth sample contains strained In_xGa_1−xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopattern's effect is studied by the different indium fraction of SL and MBE growth conditions.     

Raman study of InAs quantum dots on GaAs/InP grown by low pressure metal-organic chemical vapor deposition

Raman spectra of InAs quantum dots (QDs) on InP substrate were investigated. Both longitudinal-optic (LO) and transverse-optic (TO) frequency of InAs QDs showed a large blue-shift comparing to its bulk due to the compressive strain in InAs QDs. Raman scattering of InAs QDs with a thin GaAs interlayer was studied. We obtained that the peak position of LO and TO mode of InAs QDs became larger blue-shifted when we inserted the GaAs layer. At the same time, we found a red-shift of the frequency of GaAs LO mode because of tensile strain. Theoretical calculation was performed and its prediction coincided with our experiment results well. They both showed that strain played an important role in formation of InAs QDs.     

Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show four peaks originating from different monolayer terraces. These peaks exhibit a doublet splitting. We assigned this doublet to free excitons and excitons bound to neutral donors from the strong well width dependence of doublet splitting.     

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 0 1) substrate

High density and ultrasmall size of Ge quantum dots (QDs) have been achieved directly on Si(0 0 1) (2 × 1) reconstruction surface. Their detailed morphology was observed by atomic force microscope (AFM) and shows that small pyramids, small domes, huts, and multi-headed large domes coexist in the film grown at 400 °C, while small domes and multi-headed large domes formed at 450 °C. Their low temperature photoluminescence (PL) showed that a very strong non-phonon (NP) peak with a large blue shift of 0.19 eV at 14 K, which can be attributed to their very high areal density, 5.2 × 10¹¹ cm⁻², and sub-10-nm mean size, 7.6 ± 2.3 nm.     

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.     

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(3 1 1)A and (1 0 0) substrates

We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(3 1 1)A and GaAs(1 0 0). On GaAs(3 1 1)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along is composed of monolayer high steps and (3 1 1)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(1 0 0) substrates, growth on shallow mesa gratings along [0 1 1], [0 1 0] and is drastically sensitive to the pattern direction due to the difference of steps along [0 1 1] and .     

Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 °C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier.