Effect of swift heavy ion irradiation in Fe/W multilayer structures

Present study reports effect of swift heavy ion irradiation on structural and magnetic properties of sputtered Fe/W multilayer structures (MLS) having bilayer compositions of [Fe(20 Å)/W(10 Å)]_5BL and [Fe(20 Å)/W(30 Å)]_5BL. These MLS are irradiated by 120 MeV Au⁹⁺ ions up to fluence of 4 × 10¹³ ions/cm². X-ray reflectivity (XRR), wide-angle X-ray diffraction (WAXD), cross-sectional transmission electron microscopy (X-TEM) and magneto optical Kerr effect (MOKE) techniques are used for structural and magnetic characterization of pristine and irradiated MLS. Analysis of XRR data using Parratt's formalism shows a significant increase in W/Fe interface roughness. WAXD and X-TEM studies reveals that intra-layer microstructure of Fe-layers in MLS becomes nano-crystalline on irradiation. MOKE study shows increase in coercivity at higher fluence, which may be due to increase in surface and interface roughness after recrystallization of Fe-layers.     

Effect of swift (∼100 MeV) heavy ion irradiation on surface morphology and electronic transport in Fe film on Si substrate

Fe film (∼50 nm) have been deposited on pSi substrate by electron beam evaporation technique. The bilayers have been irradiated by 100 MeV Fe⁷⁺ ions having fluences of 1 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ ions cm⁻². SEM study of the unirradiated devices show surface modifications having a annular structures. From XRD study of the bilayer, it is observed that grain size has reduced from 70 to 25 nm after the irradiation for a fluence of 1 × 10¹⁴ ions cm⁻². Moreover electronic transport data of the bilayer show practically no effect on the current flow for a fluence of 1 × 10¹³ ions cm⁻² irradiation whereas for 1 × 10¹⁴ ions cm⁻² fluence, there is very significant change in current flow (by two orders in magnitude) across the bilayer. However, for a higher fluence of irradiation 5 × 10¹⁴ ions cm⁻², the bilayer becomes highly resistive. It has been found from the above observations that the fluence of 1 × 10¹⁴ ions cm⁻² of swift heavy ion irradiation is a optimum fluence.     

Lattice damage in InGaN induced by swift heavy ion irradiation

The microstructural responses of In_0.32Ga_0.68N and In_0.9Ga_0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In_0.9Ga_0.1N is more susceptible to irradiation than the Ga-rich In_0.32Ga_0.68N. Xe ion irradiation with a fluence of 7× 10¹¹ ions·cm^-2 leads to little damage in In_0.32Ga_0.68N but an obvious lattice expansion in In_0.9Ga_0.1N. The level of lattice disorder in In_0.9Ga_0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In_0.9Ga_0.1N.     

Structural and magnetic study of swift heavy ion irradiated W/Fe multilayer structure

The present study reports the effect of swift heavy ion irradiation on structural and magnetic properties of sputtered W/Fe multilayer structure (MLS) having bilayer compositions of [W(10 Å)/Fe(20 Å)]_10BL. The MLS is irradiated by 120 MeV Au⁹⁺ ions of fluences 1×10¹³ and 4×10¹³ ions/cm². Techniques like X-ray reflectivity (XRR), cross-sectional transmission electron microscopy (X-TEM) and DC magnetization with a vibrating sample magnetometer (VSM) are used for structural and magnetic characterization of pristine and irradiated MLS. Analysis of XRR data using Parratt’s formalism shows a significant increase in W/Fe layer roughness. X-TEM studies reveal that intra-layer microstructure of Fe layers in MLS becomes nano-crystalline on irradiation. DC magnetization study shows that with spacer layer thickness interlayer coupling changes between ferromagnetic to antiferromagnetic.     

Effect of swift heavy ion irradiation on surface resistance of DyBa2Cu3O7-δ thin films at microwave frequencies

We report the observation of a propounced peak in surface resistance at microwave frequencies of 4.88 GHz and 9.55 GHz and its disappearance after irradiation with swift ions in laser ablated DyBa₂Cu₃O_7-δ (DBCO) thin films. The measurements were carried out in zero field as well as in the presence of magnetic fields (up to 0.8 T). The films were irradiated using 90 MeV oxygen ions at Nuclear Science Centre, New Delhi at a fluence of 3×10¹³ ions/cm². Introduction of point defects and extended defects after irradiation suppresses the peak at 9.55 GHz whereas no suppression is observed at 4.88 GHz. These results and the vortex dynamics in the films at microwave frequencies before and after irradiation are discussed.     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

Physical mechanism of swift heavy ion irradiation effect in graphene

ABSTRACT

The damage production induced by swift heavy ion irradiation in single-layer graphene (SLG) is investigated by molecular dynamics method. By given energy to a cylindrical region, the latent track consisting of nanopore and non-six-member rings can be produced, which depends on the electronic energy loss (dE/dx). For SLG, the minimum value needed to generate defects lies in 6.5–10?keV/nm. The latent track formation begins with the decomposition of the structure in energy deposition region until the atomic fragments escape from the surface and gradually decompose into atomic clusters. At the same time, the structure of system also changes. The source power of this phenomena is the accumulation and outward propagation of atomic stress in energy deposition region.     

Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Structural modification in swift heavy ion irradiated muscovite mica

Two-layer monoclinic(2 M) muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss( dE/dx)_e of 14.7 keV/nm. The ion fluence is varied between 1×10~(11) and1×10~(13) ions/cm~2. Structural transition in irradiated mica is investigated by x-ray diffraction(XRD). The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion(SHI) irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic(1 M) structure is thought to be generated in 2 M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy(HRTEM) is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.     

Effect of swift heavy ion irradiation on thermal,optical and structural properties of poly vinylidene chloride

Poly vinylidene chloride (PVDC) irradiated with lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver ions (120 MeV) having fluence range of 1 × 10¹¹ ions/cm² to 3 × 10¹² ions/cm² have been studied using different techniques i.e. XRD (X-ray diffraction), FTIR (Fourier transform infrared), UV–Visible and TGA (thermo-gravimetric analysis). In XRD analysis, the intensity of diffraction peaks of PVDC irradiated with lithium ions was enhanced at lower fluence as compared to pristine. The shift in optical absorption edge in irradiated PVDC was correlated with the decrease in optical band gap energy. The distinguishable characteristic peaks were observed due to UV–Vis analysis, in lithium irradiated samples of PVDC at higher fluences. The % age decrease in optical band gap energy for the respective ions were 30.9%, 34.16%, 81.1%, 87.02% respectively. Formation of double carbon bonds and breaking of C–O and C–Cl bonds with the release of Cl in irradiated PVDC was observed in FTIR spectra. In Thermogravimetric analysis (TGA), the % age weight loss observed for irradiated samples with increase in ion fluence was lesser than the % age weight loss observed in pristine sample.     

TEM investigations of heavy ion latent tracks

High resolution observations of GeS single crystals with a 400 keV transmission electron microscope (TEM) were carried out. The GeS was irradiated at the UNICAC with heavy ions at several MeV/u specific energy. The imaging of the tracks revealed relatively large amorphous cores of elliptical cross section, oriented with respect to the crystal lattice.     

High energy heavy ion tracks in bubble detectors

Bubble detectors which are commonly used as neutron detectors have been demonstrated through this study to be good detectors for registration of high energy heavy ion tracks. Large size bubble detectors made in China Institute of Atomic Energy were irradiated to heavy ions Ar and C up to 650 MeV/u and 400 MeV/u, respectively. Very clear features of stringy tracks of high energy heavy ions and their fragmentations are manifested and distinguishable. A single track created by a specific high energy heavy ion is composed of a line of bubbles, which is visible by naked eyes and retained for months wihhout reduction in size. The creation of heavy ion tracks in bubble detectors is governed by a threshold whose essence is approximately a critical value of energy loss rate (dE/dX)_c similar to that of etch track detectors. Ranges of heavy ions in bubble detectors are apparent and predictable by existing formulas. Identification of high energy heavy ions and the applications to heavy ion physics, cosmic rays, exotic particles and cancer therapy monitoring are obviously promising. The experimental and theoretical aspects of high energy heavy ion tracks in bubble detectors as well as the expectable applications are presented and discussed.     

Raman spectroscopy study of damage induced in fluorapatite by swift heavy ion irradiations

Raman spectroscopy was used to study the radiation damage of fluorapatite single crystals and sinters. Krypton and iodine ion irradiations were performed at high energies (∼1 MeV amu⁻¹) for fluences ranging between 1 × 10¹¹ and 5 × 10¹³ cm⁻². Evolution of the symmetric stretching mode of the PO₄³⁻ tetrahedral building blocks (strongest Raman mode observed at 965 cm⁻¹) versus ion fluence was investigated. After irradiation, this peak decreases in intensity and a second broader peak appears at lower wavenumber. The well‐resolved peak has been assigned to the crystalline phase, and the broader one to the amorphous phase. The integrated intensity ratios of these two peaks versus fluence are in good agreement with the damage fractions determined by X‐ray diffraction (XRD). Fits of the amorphous fraction versus fluence show that the amorphization mechanisms is dominated by a single‐impact process for iodine ions and by a double‐impact process for krypton ions in the case of single crystals and sinters. For both irradiations, complete amorphization could not be obtained. The amorphous fraction saturates at a maximum value of 88% for sinters and 72% for single crystals. This is attributed to a recrystallization effect which is more important in single crystals than in sinters. For both types of samples, the crystalline peak shifts slightly to a lower wavenumber with fluence, and then shifts back to its initial value for an amorphous fraction larger than 60%. This feature is attributed to a stress relaxation, as shown in the XRD data, which is accompanied by a decrease of the crystalline peak full‐width at half‐maximum. Copyright © 2011 John Wiley & Sons, Ltd.     

脉冲离子束作用下靶面次级电子的抑制

论述了离子束作用下固体表面次级电子产生的机制,介绍了特种真空器件中次级电子抑制的各种方法及其优缺点,提出了脉冲离子束作用下靶面次级电子抑制的自偏势法和曲面靶法等设计思路,并在实验上进行了初步验证。实验结果表明,自偏势电压大于80 V后,次级电子得到很好的抑制。在相同束流情况下,曲面靶较平面靶的次级电子产额少。利用实验结果进行估算得到了近似的次级电子产额约为0.67,比文献中的结果(0.58)偏大。对实验中自偏势法抑制反峰电子电流的效果进行了分析和讨论,结果表明:自偏势法不但能够有效抑制离子打靶产生的次级电子,还能抑制由功率源不稳定带来的入射反峰电子流。     

脉冲离子束作用下靶面次级电子的抑制

论述了离子束作用下固体表面次级电子产生的机制,介绍了特种真空器件中次级电子抑制的各种方法及其优缺点,提出了脉冲离子束作用下靶面次级电子抑制的自偏势法和曲面靶法等设计思路,并在实验上进行了初步验证。实验结果表明,自偏势电压大于80 V后,次级电子得到很好的抑制。在相同束流情况下,曲面靶较平面靶的次级电子产额少。利用实验结果进行估算得到了近似的次级电子产额约为0.67,比文献中的结果(0.58)偏大。对实验中自偏势法抑制反峰电子电流的效果进行了分析和讨论,结果表明：自偏势法不但能够有效抑制离子打靶产生的次级电子,还能抑制由功率源不稳定带来的入射反峰电子流。     

A study on CoFe/p-Si interfacial structures before and after swift heavy ion irradiation

Interfacial structures of CoFe/p-Si have been studied before and after the swift heavy ion (～100?MeV, Ni⁷⁺) irradiation to investigate its electronic and magnetic behavior. X-ray diffraction (XRD), atomic force microscopy, magnetic force microscopy and magnetization characteristics (M–H) from vibrating sample magnetometer (VSM) techniques have been used for the above. XRD data have confirmed the formation of the CoFe alloy phase along with the silicide phases of Fe and Co. It is observed that there is an irradiation-induced growth in crystallite but surface remains smooth with a surface roughness of ～34?nm. A very significant increase has been observed in the magnetization and that too with irradiation dose as compared with unirradiated ones, maintaining their superparamagnetic behavior. The results could be understood due to the role played by various magnetic phases in the structure. The magnetic field sensitivity on electronic transport across the structures has also increased in a significant manner after the irradiation as compared with unirradiated ones. The magnetic field sensitivity has resulted in an MR of 20%. The results could be understood due to the irradiation induced interfacial intermixing to result in increased magnetic phases of silicide for the observed significant magnetic behavior on the irradiation.     

Investigation of neutron emission from relativistic heavy ion interactions by nuclear tracks

Fast neutrons produced in 44 and 22 GeV ¹²C+Cu interactions have been recorded and analysed with a CR-39 detector stack. The irradiation of the CR-39 stack to fast neutrons was carried out at the accelerator Synchrophasotron, Joint Institute for Nuclear Research, Dubna, Russia. Areal and volume densities of tracks induced by fast neutrons in the CR-39 at different positions and for different etching time have been measured. The neutron production ratio of 44 GeV to 22 GeV ¹²C+Cu interactions has been obtained, which is 2.17 ± 0.30 by areal track density, or 2. 12±0.33 by step etch technique, or 2.03±0.34 by volume track density measurement. These results confirm that the production rate at 44 GeV ¹²C+Cu interactions is more than theoretical estimation.     

Investigation of latent and short etched heavy ion tracks in solids

In the past five years were carried out SANS (Small-Angle Neutron Scattering measurements in the JINR to investigate latent and short etched tracks in SSNTD. The results demonstrate the suitability of the method to study not etched and short etched tracks to analyse the etching process, e.g. for nuclear track filter production. The results are in good agreement with other methods as conductivity measurements.     

Contemplations on the impressions of MeV swift heavy ion irradiation on nonlinear optical dimethyl-amino-pyridinium-4-nitrophenolate-4-nitro-phenol (DMAPNP) single crystals

Organic nonlinear optical crystal dimethyl-amino-pyridinium-4-nitrophenolate-4-nitro-phenol was subjected to 100 MeV Ag⁸⁺ ions and 50 MeV Si⁸⁺ ions. The radiation effects are studied in terms of processes observed with the pristine samples and in comparison with them. The dielectric properties of the crystals were studied before and after irradiation from 100 Hz to 5 MHz at various temperatures (308–383 K). A drastic increase in the dielectric constant is seen due to irradiation. The dielectric constant and conductivity increases with the increase of irradiation fluence for the samples. The observed results are discussed in detail.