超导量子器件片上皮法电容的制备及测量

片上集成电容是超导量子芯片上的核心器件，其数值一般在百飞法(fF)至皮法(pF)范围.采用常规微纳加工技术在蓝宝石基片上制备了铌-氧化硅-铝(Nb/SiO₂/Al)平行板电容.利用刻蚀工艺制备了平行板电容器的下极板Nb,利用剥离工艺制备平行板电容器的上极板Al和介电层SiO₂.室温下利用锁相放大原理和桥式电路原理测定电容大小，两种方法测定电容值基本一致，表明锁相放大原理测试pF级电容的可靠性.利用该电容与铝基约瑟夫森结组成谐振器，制备了中心频率位于4.35 GHz的约瑟夫森参量放大器.在稀释制冷机中10 mK温度下测定直流偏置谐振器的磁通-频率相位图，拟合数据获得的电容值与室温测定电容值接近，表明在mK、GHz条件下工作的片上集成电容可在室温、kHz条件下测定其数值大小.     

双电层氧化锌薄膜晶体管偏压应力稳定性

以环保可降解的天然生物材料制备功能器件越来越受到关注,利用天然鸡蛋清作为栅介质层,采用射频磁控溅射法在其上沉积ZnO薄膜有源层,制备低压双电层氧化锌基薄膜晶体管（ZnO-TFT）并对其电学特性进行了表征,研究了器件在栅偏压和漏偏压应力下电性能的稳定性及其内在的物理机制。该ZnO-TFT器件呈现出良好的电特性,载流子饱和迁移率为5.99 cm²/（V·s）,阈值电压为2.18 V,亚阈值摆幅为0.57 V/dec,开关电流比为1.2×10⁵,工作电压低至3 V。研究表明,在偏压应力作用下,该ZnO-TFT器件电性能存在一定的不稳定性,我们认为栅偏压应力引起的电性能变化可能来源于栅介质附近及界面处的正电荷聚集、充放电效应和新陷阱态的复合效应;漏偏压应力引起的电性能变化可能来源于焦耳热引起的氧空位及沟道中的电子陷阱。     

双电层交叠时微通道内流动的数值模拟

本文采用有限容积法数值模拟了在电动效应作用下微通道内流体的流动特性。分别采用Poisson方程和Nernst- Planck方程计算电动势和离子浓度分布。结果表明在双电层相互交叠的情况下,微通道内轴向的流动电势先减小后增大,并逐渐趋于定值,从而导致了轴向电动效应不断增强。     

测量空气的电容率

利用自制的可调间距的精密平行板电容器，配合交流电桥，通过一定的误差分析与数据处理，较为准确地测量了空气的电容率。     

测量电介质的电容率

简述了应用计算机技术改进测量电介质电容率的一种方法。     

SiO2固态电解质中的质子特性对氧化物双电层薄膜晶体管性能的影响

本文采用等离子体增强化学气相沉积技术(PECVD)在室温条件下制备了具有双电层效应的二氧化硅(SiO₂) 固体电解质薄膜, 并以此SiO₂薄膜作为栅介质制备了氧化铟锌(IZO)双电层薄膜晶体管. 本文系统地研究了SiO₂固体电解质中的质子特性对双电层薄膜晶体管性能的影响, 研究结果表明, 经过纯水浸泡的SiO₂固体电解质薄膜可以诱导出较多的可迁移质子, 因此表现出较大的双电层电容. 由于SiO₂固体电解质薄膜具有质子迁移特性, 晶体管的转移特性曲线呈现出逆时针方向的洄滞现象, 并且这一洄滞效应随着栅极电压扫描速率的增加而增大. 进一步对薄膜晶体管的偏压稳定性进行测试, 发现晶体管的阈值电压的变化遵循了拉升指数函数(stretched exponential function)关系.     

薄膜材料电容率的测量

利用阻抗分析仪测量了金属-介质薄膜-半导体结构的C-V特性曲线. 由积累区电容得到所制备HfO2薄膜的电容为1.24 nF,计算得其相对电容率为12.49.     

基于蛋清栅介质的超低压双电层薄膜晶体管

新一代环保、生物兼容性电子功能器件受到了广泛关注.本文采用具有高质子导电特性的天然鸡蛋清作为耦合电解质膜制备双电层薄膜晶体管,该薄膜晶体管以氧化铟锡导电玻璃为衬底和底电极,以旋涂法制备的鸡蛋清为栅介质,以磁控溅射沉积的氧化铟锌为沟道和源漏电极.实验结果表明,这种基于鸡蛋清的栅介质具有良好的绝缘性,并能在其与沟道界面处形成巨大的双电层电容,从而使得该类晶体管具有超低工作电压（1.5 V）、低亚阈值（164 mV/dec）、大电流开关比（2.4×10⁶）和较高的饱和区场效应迁移率（38.01 cm²/（V· s））.这种以天然鸡蛋清为栅介质的超低压双电层TFTs有望应用于新型生物电子器件及低能耗便携式电子产品.     

电阻热噪声测量玻尔兹曼常量的教学探索

玻尔兹曼常量是连接微观热运动与宏观物理现象和规律的重要物理量,基于电阻热噪声的玻尔兹曼常量测量实验可应用于大学物理实验教学.本文利用锁相放大器OE1022,设计了电磁屏蔽更好的样品盒,可以在室温至液氮温度间测量热噪声,托展了宽频谱段的测量,展现电阻热噪声的特性,并计算出玻尔兹曼常量.对2个年级采用不同的实验方案进行教学,为有限课时内多人参与的实验室环境下测量玻尔兹曼常量提供教学参考.     

用电容法测量微振动位移

木文介绍了微振动位移非接触测量的电容法，讨论了方法的原理，测量电子学和有关的技术问题．测量中采用小尺寸的电容位移探测头，同样获得了高的灵敏度，精密的滤波技术，使得所测振动的上限频率达７ｋＨｚ．实验结果证明，这一方法是可靠的．     

巧用指针式多用电表的欧姆挡测电容

用欧姆表测量大容量电容器时,可通过监测指针的偏转情况了解电容的充电情况,从而测量电容器的电容.     

用模拟万用表测电容

介绍了用模拟万用表和秒表测量电容的简单方法，对测量结果的误差原因进行了分析，给出了提高测量精度的几点措施。     

激光羽烟透过率测试技术研究

为了准确评估固体推进剂的性能,研制了红外激光羽烟透过率测量系统。系统采用透射的方法:在发射端对激光信号采用内调制,由光学系统送入接收端,并将接收到的信号进行光电转换、信号处理和A/D转换后送入计算进行数据的处理和显示。现场测试结果表明该系统的精度、响应速度和稳定度达到设计要求。     

Comparative study of electrochemical capacitance of multi-walled carbon nanotubes before and after chopping

In the work, short multi-walled carbon nanotubes (S-CNTs) were synthesized by chopping conventional μm-long multi-walled carbon nanotubes (L-CNTs) under ultrasonication in H₂SO₄/HNO₃ mixed acids. A comparative electrochemical investigation performed in 6 M KOH solution demonstrated that a specific capacitance (SC) of ca. 14.6 μF cm⁻² was delivered by the S-CNTs with the specific surface area (SSA) of 207 m² g⁻¹, much larger than that of ca. 10.1 μF cm⁻² for the L-CNTs with the SSA of 223 m² g⁻¹, the reason for which was that S-CNTs with two open ends, due to good ion penetrability, provided more entrances for electrolyte ions to access the inner surface easily through their shorter inner pathway so as to enhance their SSA utilization and geometric SC. The surface structure disruption of S-CNTs, owing to ultrasonication and oxidation during chopping process, deteriorated their electronic conductivity and resulted in an inferior power property in contrast to L-CNTs.     

Quantum fluctuations of the antiferro-antiferromagnetic double-layer

This paper stuides the magnetization and quantum fluctuations of an antiferro-antiferromagnetic (AF-AF) double-layer at zero temperature. It is found that the exchanges and anisotropy constants affect the quantum fluctuations of spins. If the anisotropy exists, there will be no acoustic energy branch in the system. The anisotropy constant, antiferromagnetic intralayer and interlayer coupling have important roles in a balance of the quantum competition.     

SiGe HBT势垒电容模型

在考虑SiGe HBT的势垒电容时，通常的耗尽层近似不再适用，应考虑可动载流子的影响.在分析研究SiGe HBT载流子输运的基础上，建立了考虑发射结势垒区内载流子分布的发射结势垒电容模型和不同电流密度下包括基区扩展效应的集电结势垒电容模型.将以上势垒电容 模型应用于SiGe HBT频率特性模拟，模拟结果与实验结果符合得很好. 关键词： SiGe HBT 势垒电容 微分电容     

Analysis of the effect of stray capacitance on a charge/discharge-based electrical capacitance tomography system

The measurement circuit of electrical capacitance tomography (ECT) system mainly includes CMOS switches, C/V conversion circuit and Data processing circuit. In order to improve the image reconstruction quality, conversion circuit is very necessary to the small capacitance measurement circuit. A charge/discharge measurement circuit is one of the most suitable for the C/V conversion circuit in ECT. The stray capacitance between the measurement electrodes and earth can be large and have an effect on the capacitance measurement. This paper analyzes this effect, taking into account the ON-resistance of the COMS switch, the unit gain frequency of op-amp, and gain error in the measurement circuit. Finally, it is shown that if the range of stray capacitance is 150 ± 60 pF, overall error would be estimated. Comparing the effects of the circuit parameters, this charge/discharge-based capacitance is effectively stray-immune. It is a more efficient analysis to C/V circuit in ECT and offers a great benefit to information processing.     

Ferroelectricity in hBN intercalated double-layer graphene

Van der Waals (vdW) assembly of two-dimensional materials has long been recognized as a powerful tool for creating unique systems with properties that cannot be found in natural compounds [Nature 499, 419 (2013)]. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures [Sci. Adv. 5, eaax5080 (2019); Nature560, 336 (2018)]. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride. The structure demonstrates high room temperature mobility of the order of 10 m²·V⁻¹·s⁻¹ and exhibits ambipolar switching in response to the external electric field. The observed hysteresis is reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a promising route for developing novel phase-changing devices. A possible microscopic model of ferroelectricity is discussed.     

采用超薄双层靶提高质子束的单能性

利用1维粒子模拟程序,研究了超短超强激光脉冲与超薄双层靶(基底层和加速层厚度均为nm量级)相互作用产生准单能质子束的过程。研究表明,基底层厚度及加速层厚度对质子能谱的影响至关重要。减小基底层厚度,靶后静电场增强,质子的最大能量显著增大;减小加速层厚度,靶后静电场分布变得更加均匀,质子能谱中心能量变化不大,单能性变好。通过优化参数,获得了能散度为7%的准单能质子束。     

Nanoscale capacitance: A quantum tight-binding model

Landauer–Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance $C^{\prime }$ and an effective capacitance $C_d$ of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance $C^{\prime }$ moves up while the effective capacitance $C_d$ converges to a value which is much smaller than the electrode capacitance $C^{\prime }$. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.